All MOSFET. IRF3415S Datasheet


IRF3415S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3415S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 43 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 133.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: D2PAK

IRF3415S Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF3415S Datasheet (PDF)

0.1. irf3415spbf irf3415lpbf.pdf Size:1066K _international_rectifier


PD - 95112IRF3415S/LPbF 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/ 3IRF3415S/LPbF4 www.irf.comIRF3415S/ 5IRF3415S/LPbF6 www.irf.comIRF3415S/ 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

0.2. irf3415s.pdf Size:156K _international_rectifier


PD - 91509CIRF3415S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Fully Avalanche RatedID = 43ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 0.3. irf3415s.pdf Size:257K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IRF3415SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , J113 , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 .


Back to Top