APM7316 MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

APM7316 Specs and Replacement

Type Designator: APM7316

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO8

APM7316 substitution

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APM7316 datasheet

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APM7316 Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=25m (typ.) @ VGS=4.5V S1 1 8 D1 RDS(ON)=40m (typ.) @ VGS=2.5V G1 2 7 D1 Super High Dense Cell Design for Extremely S2 3 6 D2 G2 4 5 D2 Low RDS(ON) Reliable and Rugged SO-8 SO-8 Package D1 D1 D2 D2 Applications G1... See More ⇒

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APM7318 Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A , RDS(ON)=15m (typ.) @ VGS=4.5V SO-8 RDS(ON)=30m (typ.) @ VGS=2.5V S1 1 8 D1 Super High Dense Cell Design for Extremely G1 2 7 D1 Low RDS(ON) S2 3 6 D2 Reliable and Rugged G2 45 D2 SO-8 Package Top View D1 D1 D2 D2 Applica... See More ⇒

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APM7314K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/8A, D1 D2 RDS(ON) =18m (typ.) @ VGS = 10V D2 RDS(ON) =23m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1... See More ⇒