All MOSFET. IRF3710 Datasheet

 

IRF3710 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3710

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 57 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 86.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO220AB

IRF3710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3710 Datasheet (PDF)

1.1. auirf3710zstrl.pdf Size:330K _update-mosfet

IRF3710
IRF3710

PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET® Power MOSFET Low On-Resistance 175°C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18mΩ Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE

1.2. irf3710z.pdf Size:172K _international_rectifier

IRF3710
IRF3710

PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

 1.3. irf3710s.pdf Size:184K _international_rectifier

IRF3710
IRF3710

PD -91310C IRF3710S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating Temperature RDS(on) = 0.025? Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

1.4. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier

IRF3710
IRF3710

PD - 95108A IRF3710SPbF IRF3710LPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 23mΩ l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

 1.5. irf3710.pdf Size:94K _international_rectifier

IRF3710
IRF3710

PD - 91309A IRF3710 HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 23m? G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.6. irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Size:382K _international_rectifier

IRF3710
IRF3710

PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18mΩ G Description ID = 59A This HEXFET® Power MOSFET utilizes the latest S processing techn

1.7. irf3710pbf.pdf Size:218K _international_rectifier

IRF3710
IRF3710

PD - 94954D IRF3710PbF HEXFET® Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 23mΩ G l Fast Switching l Fully Avalanche Rated ID = 57A l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre

1.8. irf3710a.pdf Size:321K _international_rectifier

IRF3710
IRF3710

RoHS IRF3710 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) DESCRIPTION The Nell IRF3710 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

1.9. irf3710z.pdf Size:246K _inchange_semiconductor

IRF3710
IRF3710

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3710Z,IIRF3710Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤18mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

1.10. irf3710s.pdf Size:258K _inchange_semiconductor

IRF3710
IRF3710

Isc N-Channel MOSFET Transistor IRF3710S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

1.11. irf3710.pdf Size:229K _inchange_semiconductor

IRF3710
IRF3710

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF3710 ·FEATURES ·Drain Current –I =57A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·Static Drain-Source On-Resistance : R = 23mΩ(Max) DS(on) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high effciency switch mode power supplies, Power fa

1.12. irf3710zs.pdf Size:258K _inchange_semiconductor

IRF3710
IRF3710

Isc N-Channel MOSFET Transistor IRF3710ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

1.13. irf3710.pdf Size:274K _first_silicon

IRF3710
IRF3710

SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Symbol Rating Unit 1.Gate 2.Drain

Datasheet: IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRFP150N , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 .

 

 
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