SIR164DP PDF and Equivalents Search

 

SIR164DP Specs and Replacement

Type Designator: SIR164DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SO8

SIR164DP substitution

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SIR164DP datasheet

 ..1. Size:306K  vishay
sir164dp.pdf pdf_icon

SIR164DP

New Product SiR164DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.0025 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET 30 40.6 nC New MOSFET Technology Optimized for 0.0032 at VGS = 4.5 V 50 Ringing Reduction in Switching Application Powe... See More ⇒

 8.1. Size:207K  vishay
sir164adp.pdf pdf_icon

SIR164DP

SiR164ADP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 100 % Rg and UIS tested D 7 D 6 Material categorization 5 for definitions of compliance please see www.vishay.com/doc?99912 1 APPLICATIONS D 2 S Synchronous rectification 3 S 4 S 1 High power density DC/DC G Top... See More ⇒

 9.1. Size:108K  vishay
sir166dp.pdf pdf_icon

SIR164DP

New Product SiR166DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition 0.0032 at VGS = 10 V 40g 30 25 nC TrenchFET Power MOSFET 0.0040 at VGS = 4.5 V 40g 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK ... See More ⇒

 9.2. Size:487K  vishay
sir168dp.pdf pdf_icon

SIR164DP

SiR168DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0044 at VGS = 10 V TrenchFET Power MOSFET 40 30 24.5 nC 100 % Rg Tested 0.0059 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS... See More ⇒

Detailed specifications: APM9966C , APM9966CO , APM9968C , APM9968CO , APM9984CCG , APM9986CO , APM9988CO , APM9988QA , 10N60 , 1481 , 2015 , 2016 , 2021 , 2026 , 2341 , 4401 , 4402 .

Keywords - SIR164DP MOSFET specs

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