All MOSFET. 1481 Datasheet

 

1481 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1481

SMD Transistor Code: 1481

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 680 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: DFN2X2-6L

1481 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1481 Datasheet (PDF)

1.1. 2n1481.pdf Size:225K _rca

1481

1.2. 2sb1481.pdf Size:179K _toshiba

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1481



 1.3. 2sa1481.pdf Size:223K _sanyo

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1481

Ordering number:EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit:mm High breakdown voltage. 2033 [2SA1481/2SC2960] B : Base C : Collector ( ) : 2SA1481 E : Emitter Specifications SANYO : SPA Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit

1.4. 2sd1481.pdf Size:107K _nec

1481
1481

DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such as OA an

 1.5. ald114813 ald114913.pdf Size:104K _ald

1481
1481

TM ADVANCED EPAD LINEAR DEVICES, INC. ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD VGS(th)= -1.30V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel Functional replacement of Form B (NC) relays MOSFETS matched at the factory using ALDs proven EPAD CMOS technology. Ultra low power (nanowa

1.6. 2sb1481.pdf Size:226K _inchange_semiconductor

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1481

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IBB= -6mA) ·Complement to Type 2SD2241 APPLICATIONS ·High power swi

1.7. wpm1481.pdf Size:260K _willsemi

1481
1481

WPM1481 WPM1481 Single P-Channel, -12V, -5.5A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical Rds(on) (Ω) I (A) DS D 0.022@ V =-4.5V -5.5 GS -12 0.030@ V =-2.5V -4.0 GS 0.045@ V =-1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON)

1.8. 1481.pdf Size:750K _shenzhen-tuofeng-semi

1481
1481

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 1481 NCE P-Channel Enhancement Mode Power MOSFET Description D The 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagr

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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