Shenzhen Tuofeng Semiconductor Technology Co., Ltd1481NCE P-Channel Enhancement Mode Power MOSFET Description DThe 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagr

Ordering number:EN829HPNP/NPN Epitaxial Planar Silicon Transistors2SA1481/2SC2960High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2033[2SA1481/2SC2960]B : BaseC : Collector( ) : 2SA1481E : EmitterSpecificationsSANYO : SPAAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

DATA SHEETSILICON POWER TRANSISTOR2SD1481NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such

TMADVANCEDEPADLINEARDEVICES, INC.ALD114813/ALD114913QUAD/DUAL N-CHANNEL DEPLETION MODE EPADVGS(th)= -1.30VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel Functional replacement of Form B (NC) relaysMOSFETS matched at the factory using ALDs proven EPAD CMOS technology. Ultra low po

WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical Rds(on) () I (A)DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

Dual N-channel MOSFETELM14812AA-NGeneral description Features ELM14812AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1481DESCRIPTIONOn-chip C-to-B Zener diode for surge voltage absorptionLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 1AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

isc Silicon PNP Darlington Power Transistor 2SB1481DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1.5A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A)CE(sat) CComplement to Type 2SD2241Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatio