1481 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 1481 NCE P-Channel Enhancement Mode Power MOSFET Description D The 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagr

Ordering number EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2033 [2SA1481/2SC2960] B Base C Collector ( ) 2SA1481 E Emitter Specifications SANYO SPA Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating

DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such

TM ADVANCED EPAD LINEAR DEVICES, INC. ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD VGS(th)= -1.30V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel Functional replacement of Form B (NC) relays MOSFETS matched at the factory using ALD s proven EPAD CMOS technology. Ultra low po

WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical Rds(on) ( ) I (A) DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

Dual N-channel MOSFET ELM14812AA-N General description Features ELM14812AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 DESCRIPTION On-chip C-to-B Zener diode for surge voltage absorption Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1A CE(sat) C High DC Current Gain h = 2000(Min) @I = 1A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1.5A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A) CE(sat) C Complement to Type 2SD2241 Minimum Lot-to-Lot variations for robust device performance and reliable operatio