All MOSFET. 2026 Datasheet

 

2026 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2026

SMD Transistor Code: 262TF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 3.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SOT23

2026 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2026 Datasheet (PDF)

1.1. 2sa2026.pdf Size:85K _update

2026
2026



1.2. rej03g1161 hat2026rds.pdf Size:102K _renesas

2026
2026

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 1.3. 2sc2026.pdf Size:35K _nec

2026

1.4. cfc2026 cfa1046 y gr.pdf Size:128K _cdil

2026
2026

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR CFC2026 TO-220FP Fully Isolated Plastic Package Complementary CFA1046 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 7.0 V RMS Isolation Voltage (for 1sec, R.H

 1.5. cfa1046 cfc2026 y gr.pdf Size:234K _cdil

2026
2026

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR POWER TRANSISTOR CFA1046 TO-220FP Fully Isolated Plastic Package Complementary CFC2026 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 7.0 V RMS Isolation Voltage (for 1sec, R.H

1.6. ktc2026.pdf Size:40K _kec

2026
2026

SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S ·Low Collector Saturation Voltage _ A 10.0 0.3 + _ + B 15.0 0.3 : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. E C _ 2.70 0.3 + D ·Complementary to KTA1046. 0.76+0.09/-0.05 _ E Φ3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ 13.6

1.7. 2sc2026.pdf Size:73K _inchange_semiconductor

2026
2026

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

1.8. wpm2026.pdf Size:346K _willsemi

2026
2026

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

1.9. mbnp2026g6.pdf Size:317K _cystek

2026
2026

Spec. No. : C197G6 Issued Date : 2011.01.20 CYStech Electronics Corp. Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device

1.10. wpm2026.pdf Size:110K _tysemi

2026
2026

Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

1.11. ktc2026.pdf Size:996K _kexin

2026
2026

DIP Type Transistors NPN Transistors KTC2026 Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ■ Features ±0.20 0.70 ● Low saturation voltage ● Complementary to KTA1046 ±0.20 2.76 1.47max ±0.20 0.50 ±0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 C

1.12. 2026.pdf Size:1412K _shenzhen-tuofeng-semi

2026
2026

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2026 P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Power MOSFETs: 1.8 V Rated VDS (V) rDS(on) (Ω)ID (A) Pb-free - 0.056 at VGS = - 4.5 V 3.2 Available 0.069 at VGS = - 2.5 V - 20 - 2.8 RoHS* COMPLIANT 0.086 at VGS = - 1.8 V - 2.3 TO-236 (SOT-23) G 1 3 D S 2 Top View 2026 *Marking Code:262TF ABSOLUTE

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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