2026 Datasheet and Replacement

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2026P-Channel 1.25-W, 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Power MOSFETs: 1.8 V RatedVDS (V) rDS(on) ()ID (A)Pb-free- 0.056 at VGS = - 4.5 V 3.2Available0.069 at VGS = - 2.5 V- 20 - 2.8RoHS*COMPLIANT0.086 at VGS = - 1.8 V- 2.3TO-236(SOT-23)G 13 DS 2Top View2026*Marking Code:262TFABSOLUTE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR POWER TRANSISTOR CFA1046TO-220FP Fully IsolatedPlastic PackageComplementary CFC2026ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 7.0 VRMS Isolation Voltage (for 1sec,

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR POWER TRANSISTOR CFC2026TO-220FP Fully IsolatedPlastic PackageComplementary CFA1046ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 7.0 VRMS Isolation Voltage (for 1sec,

SEMICONDUCTOR KTC2026TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Collector Saturation Voltage_A 10.0 0.3+_+B 15.0 0.3: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. EC _2.70 0.3+DComplementary to KTA1046. 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_13.6

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

Spec. No. : C197G6 Issued Date : 2011.01.20 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device

Product specificationWPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

DIP Type TransistorsNPN TransistorsKTC2026Unit: mmTO-220F0.200.200.202.54 Features0.200.70 Low saturation voltage Complementary to KTA10460.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 C

SL2026 -20V/-3.2A P-Channel MOSFETProduct SummaryFeatures Leading trench technology for low RDS(on) VDS RDS(ON) MAX ID MAX Low Gate Charge 65m@-4.5VD2-20V S1 -3.2AD181m@-2.5VApplication Video monitor Power managementDSDGSOT-23 top view Schematic diagramM26: Device codeM26G SMarking and pin assignment Absolute Maximum Ratings (TA=25u

WST2026N-Channel MOSFETGeneral Description Product SummeryThe WST2026 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 65m 2.0Agate charge for most of the small power switching and load switch applications. Applications The WST2026 meet the RoHS and Green Product requirement with full

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF

isc N-Channel MOSFET Transistor 2SK2026-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY