2026 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2026 P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Power MOSFETs 1.8 V Rated VDS (V) rDS(on) ( )ID (A) Pb-free - 0.056 at VGS = - 4.5 V 3.2 Available 0.069 at VGS = - 2.5 V - 20 - 2.8 RoHS* COMPLIANT 0.086 at VGS = - 1.8 V - 2.3 TO-236 (SOT-23) G 1 3 D S 2 Top View 2026 *Marking Code 262TF ABSOLUTE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR POWER TRANSISTOR CFA1046 TO-220FP Fully Isolated Plastic Package Complementary CFC2026 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 7.0 V RMS Isolation Voltage (for 1sec,

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR CFC2026 TO-220FP Fully Isolated Plastic Package Complementary CFA1046 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 7.0 V RMS Isolation Voltage (for 1sec,

SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector Saturation Voltage _ A 10.0 0.3 + _ + B 15.0 0.3 VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. E C _ 2.70 0.3 + D Complementary to KTA1046. 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ 13.6

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

Spec. No. C197G6 Issued Date 2011.01.20 CYStech Electronics Corp. Revised Date Page No. 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device

Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

DIP Type Transistors NPN Transistors KTC2026 Unit mm TO-220F 0.20 0.20 0.20 2.54 Features 0.20 0.70 Low saturation voltage Complementary to KTA1046 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 C

SL2026 -20V/-3.2A P-Channel MOSFET Product Summary Features Leading trench technology for low RDS(on) VDS RDS(ON) MAX ID MAX Low Gate Charge 65m @-4.5V D2 -20V S1 -3.2A D1 81m @-2.5V Application Video monitor Power management D S D G SOT-23 top view Schematic diagram M26 Device code M26 G S Marking and pin assignment Absolute Maximum Ratings (TA=25 u

WST2026 N-Channel MOSFET General Description Product Summery The WST2026 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 65m 2.0A gate charge for most of the small power switching and load switch applications. Applications The WST2026 meet the RoHS and Green Product requirement with full

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION Low Noise NF= 3.0dB TYP. @ f= 500MHz High Power Gain G = 15dB TYP. @ f= 500MHz pe High Gain Bandwidth Product f = 2.0GHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise amplifiers in the VHF

isc N-Channel MOSFET Transistor 2SK2026-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY