IRF451 Spec and Replacement
Type Designator: IRF451
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 600(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3
IRF451 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF451 Specs
2n6770 irf450.pdf
PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400 12A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest S... See More ⇒
irf450.pdf
IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Features Power MOSFET 13A, 500V This N-Channel enhancement mode silicon gate power field rDS(ON) = 0.400 effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode... See More ⇒
irf450b irf450c.pdf
RoHS IRF450 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 14A, 500Volts DESCRIPTION D The Nell IRF450 is a three-terminal silicon device with current conduction capability of 14A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G... See More ⇒
Detailed specifications: IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRFZ48N , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A .
Keywords - IRF451 MOSFET specs
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