8810 Datasheet and Replacement

Shenzhen Tuofeng Semiconductor Technology Co., Ltd8810Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe 8810 uses advanced trench technology to provide VDS (V) = 20Vexcellent RDS(ON), low gate charge and operation with gate ID = 6A (V = 4.5V)GSvoltages as low as 1.8V. This device is suitable for use as a RDS(ON)

SI8810Features Low RDS(ON) Rugged and Reliable ESD Protected Gate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSN-Channel MOSFETCompliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Maximum Ratings Operating Junction Tempera

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8810 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP@4.5V14.2m15.4m@3.8V20V 7A18.2m@2.5V26m@1.8VDESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8810 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 Vm @1026@4.5V27m m@3.8V30 7A20V@2.5V 33m45m @1.8V1.GATE 2.SOURCE 3.DRAIN APPLICATION FEATURE Surface Mount Package Load/ Power Switching Low R (on) DS Small Portable Electronics

AO881020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8810 uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It is ESD protected. ID (at VGS=4.5V) 7AThis device is suitable for use as a uni-directional or bi- RDS(ON) (at VGS= 4.5V)

Spec. No. : C779T8 Issued Date : 2014.04.15 CYStech Electronics Corp.Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810AT8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Features 1.8V drive available Low on-resistance Fast switching speed Pb-free lead pl

Spec. No. : C582T8 Issued Date : 2013.07.25 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810T8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Description The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer w

GreenProductSTF8810aS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16.0 @ VGS=4.5VSuface Mount Package.17.0 @ VGS=4.0V20V 8.0A 18.0 @ VGS=3.7V ESD Protected.21.0 @ VGS=3.1V27.5 @ VGS=2.5VG2Bottom Drain

GrPPrPPSTG8810aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.18.5 @ VGS=4.5VSuface Mount Package.19.5 @ VGS=4.0VESD HBM > 2KV.20V 7A 20.0 @ VGS=3.7V23.0 @ VGS=3.1V28.5 @ VGS=2.5VD1 D2TS S OP

GreenProductSTG8810AaS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.5 @ VGS=4.5VSuface Mount Package.15.0 @ VGS=4.0V ESD HBM > 2KV.20V 7A 17.0 @ VGS=3.7V 19.5 @ VGS=3.1V 23.0 @ VGS=2.5V D1 D2 TS S

SSF8810 Main Product Characteristics: VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description: Th

BR8810MF Rev.E Oct.-2017 DATA SHEET / Descriptions SOT23-6 N MOS ESD N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested. / Features RDS(on)advanced trench technology to provide excellent RDS(on), low gate charge. VD

SEMICONDUCTORFTK8810LTECHNICAL DATADual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTIONThe FTK8810L use advanced trench technology to provide excellent SOT-23-6L RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. ABSOLUTE MAXIMUM RAT

SEMICONDUCTORFTK8810TECHNICAL DATADESCRIPTION The FTK8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

SMD Type MOSFETDual N-Channel MOSFETAO8810SOP-8 Features VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) 20m (VGS = 4.5V) 1.50 0.15 RDS(ON) 24m (VGS = 2.5V) RDS(ON) 32m (VGS = 1.8V) ESD Rating: 2000V HBMD1 D2S1 1 8 D12 7G1 D13 6S2 D24 5G2 D2G1 G2S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

SMD Type MOSFETDual N-Channel MOSFETKI8810DYSOP-8 Features VDS (V) = 20V ID = 7 A1.50 0.15 RDS(ON) 20m (VGS = 4.5V) RDS(ON) 30m (VGS = 2.5V) RDS(ON) 50m (VGS = 1.8V) ESD Rating: 2KV HBMD1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25Top ViewS2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

SMD Type MOSFETDual N-Channel MOSFETKI8810T( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID = 7 A RDS(ON) 20m (VGS = 4.5V)2 31 RDS(ON) 30m (VGS = 2.5V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 50m (VGS = 1.8V)+0.2-0.1 ESD Rating: 2KV HBMD1 D2S1 1 6 G1G1 G2 D1/D2 2 5 D1/D2S2 3 4 G2S2S1

SMD Type MOSFETN-Channel MOSFETKI8810DSSOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 6 A1 2 RDS(ON) 22m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 30m (VGS = 2.5V) D ESD protectedG1. Gate2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol R

AiT Semiconductor Inc. AM8810 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8810 uses advanced trench technology to V =20V,I =7A, DS Dprovide excellent R , low gate charge and Typ.R = 16m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 20m @ V =2.5V DS(ON) GSdevice is suitable for use as

(common drain)Dual N-channel MOSFET ELM18810BA-SGeneral description Features ELM18810BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

SMC8810A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8810A is the Single N-Channel logic 20V/7.0A, RDS(ON) =14.5m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/6.5A, RDS(ON) =17m(typ.)@VGS =2.5V which is produced using high cell density. advanced 20V/5.0A, RDS(ON) =27m(typ.)@VGS =1.8V trench technology to prov

SMC8810 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8810 is the Dual N-Channel logic 20V/7.0A, RDS(ON) =11.5m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/7.0A, RDS(ON) =12.0m(typ.)@VGS =4.0V which is produced using high cell density. advanced 20V/6.5A, RDS(ON) =12.5m(typ.)@VGS =3.2V trench technology to prov

Eternal Semiconductor Inc.EM8810Dual N-Channel High Density Trench MOSFET (20V, 7A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 15 @ VGS = 4.5V, ID=7A 16@ VGS = 4.0V, ID=7A20V 7.0A 16.5@ VGS = 3.7V, ID=5.5A18 @ VGS = 2.5V, ID=5.5AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb

HSO8810 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSO8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),typ 11.5 m product is suitable for Lithium-ion battery pack applications. ID 7.3 A The HSO8810 meet the RoHS and Green Product requirement with full function reliability approved. TSSOP8 Pin Conf

HSW8810 Dual N-Ch Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 20 m product is suitable for Lithium-ion battery pack applications. ID 6 A The HSW8810 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Availabl

PT8810 Dual N-Channel MOSFETDESCRIPTION The PT8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. TSSOP-8FeaturesD1/D2 1 8 D1/D22 7S1 S2VDS (V) = 20V3 6S1 S2ID = 6A (VGS = 10V)4 5

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDTSSOP-8 Plastic-Encapsulate MOSFETS 8810B8810BDual N-Channel MOSFETV(BR)DSS RDS(on)MAX ID TSSOP-8 Max0.015 @ 4.5V20V6.0A0.019 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICAT

WSP8810Dual N-Channel MOSFETProduct SummeryGeneral Description The WSP8810 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 11.5m 7.5Afor most of the small power switching and load switch applications. Applications The WSP8810 meet the RoHS and Green Product requirement w

WSP8810ADual N-Channel MOSFETProduct SummeryGeneral Description The WSP8810A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 20V 14.5m 7.0Adensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8810A meet the RoHS and Green High Frequency Po

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)

AO8810www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA = 25

HM8810Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23 4

VBZC8810www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.018 at VGS = 4.5 V Available5.020RoHS*0.030 at VGS = 2.5 V 3.6COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RAT

HM8810SDual N-Channel Trench Power MOSFETGeneral DescriptionThe HM8810S uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =5A HM8810SR

HM Dual N-Channel Trench Power MOSFETGeneral DescriptionThe HM uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =7A HM R

HM8810EDual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = 20V,ID =7A RDS(ON)