9926B Datasheet and Replacement

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFETDual N-Channel MOSFET9926BFeatures6.5A, 20 V . rDS(on) = 0. 022 @VGS =4.5 V5.5A , 20 V rDS(on) = 0. 035 @VGS =2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady Sate UnitDrai n-S ourc e V ol t age V DS 20 VGat e-S ourc e V ol t age V GS 10 V6.5 AContinuous Drain Current Ta=25 IDPulsed

GOFORD9926BDescription The 9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ)20V16m 20 m 6AB High density cell design for ultra low Rdson Fully characterized avalanche

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 9926BN-Channel Enhancement Mode Power MOSFET SOP-8L D2Description D2D1The 9926B uses advanced trench technology to provide D1excellent RDS(ON) and low gate charge . The complementary G2GS2MOSFETs may be used to form a level shifted high side G1 SSS1SO-8 Sswitch, and for a hos

AO9926B20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO9926B uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V)

SMD Type MOSFETSMD TypeDual N-Channel MOSFETSI9926BDY (KI9926BDY) Features SOP-8 RDS(on) = 0.027 @ VGS = 4.5 V RDS(on) = 0.036 @ VGS = 2.5 V.1.50 0.15D D1 2S D1 1 8 1G D1 2 7 1S D G G2 3 6 2 1 2G D2 4 5 2S S1 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 sec Steady State UnitDrain-Source Voltage VDS 20 VGate-Source Volta

MMN9926BDYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@8.2A = 20mRDS(ON), Vgs@2.5V, Ids@3.3A = 30mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityIdeal for Li ion battery pack applicationsTSSOP-08 S

WSP9926BDual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926B is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 17m 8Agate charge for most of the small power switching and load switch applications. Applications The WSP9926B meet the RoHS and Green Product requirement wit

HM9926BDual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =20V,ID =5A Schematic diagram RDS(ON)