9926B - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V . rDS(on) = 0. 022 @VGS =4.5 V 5.5A , 20 V rDS(on) = 0. 035 @VGS =2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady Sate Unit Drai n-S ourc e V ol t age V DS 20 V Gat e-S ourc e V ol t age V GS 10 V 6.5 A Continuous Drain Current Ta=25 ID Pulsed

GOFORD 9926B Description The 9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) 20V 16m 20 m 6 A B High density cell design for ultra low Rdson Fully characterized avalanche

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926B N-Channel Enhancement Mode Power MOSFET SOP-8L D2 Description D2 D1 The 9926B uses advanced trench technology to provide D1 excellent RDS(ON) and low gate charge . The complementary G2 G S2 MOSFETs may be used to form a level shifted high side G1 S S S1 SO-8 S switch, and for a hos

AO9926B 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V)

SMD Type MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY (KI9926BDY) Features SOP-8 RDS(on) = 0.027 @ VGS = 4.5 V RDS(on) = 0.036 @ VGS = 2.5 V. 1.50 0.15 D D 1 2 S D 1 1 8 1 G D 1 2 7 1 S D G G 2 3 6 2 1 2 G D 2 4 5 2 S S 1 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Volta

MMN9926BDY Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@8.2A = 20m RDS(ON), Vgs@2.5V, Ids@3.3A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications TSSOP-08 S

JMTP9926B Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 20V, 6A Load Switch RDS(ON)

WSP9926B Dual N-Channel MOSFET General Description Product Summery The WSP9926B is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 17m 8A gate charge for most of the small power switching and load switch applications. Applications The WSP9926B meet the RoHS and Green Product requirement wit

HM9926B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =20V,ID =5A Schematic diagram RDS(ON)