FDMA905 MOSFET Datasheet: P-Ch, 12V, 6.7A. Full specification with pinout and replacement list

FDMA905 Specs and Replacement

Type Designator: FDMA905

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: DFN2X2-6L

FDMA905 substitution

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FDMA905 datasheet

..1. Size:468K shenzhen
fdma905.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDMA905 NCE P-Channel Enhancement Mode Power MOSFET Description D The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic... See More ⇒

0.1. Size:500K fairchild semi
fdma905p.pdf pdf_icon

June 2014 FDMA905P Single P-Channel PowerTrench MOSFET -12 V, -10 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 A applications. It features a MOSFET with low on-state resista... See More ⇒

0.2. Size:972K onsemi
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... See More ⇒

8.1. Size:336K fairchild semi
fdma908pz.pdf pdf_icon

February 2014 FDMA908PZ Single P-Channel PowerTrench MOSFET -12 V, -12 A, 12.5 m Features Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 A General Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,... See More ⇒