FDMA905 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDMA905 NCE P-Channel Enhancement Mode Power MOSFET Description D The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic

June 2014 FDMA905P Single P-Channel PowerTrench MOSFET -12 V, -10 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 A applications. It features a MOSFET with low on-state resista

February 2014 FDMA908PZ Single P-Channel PowerTrench MOSFET -12 V, -12 A, 12.5 m Features Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 A General Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,

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