All MOSFET. 20N06 Datasheet

 

20N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 20N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: TO252

20N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

20N06 Datasheet (PDF)

1.1. fdp020n06b f102.pdf Size:658K _upd-mosfet

20N06
20N06

January 2012 FDP020N06B_F102 N-Channel PowerTrench® MOSFET 60V, 313A, 2m Features Description • RDS(on) = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tailored • Low FOM RDS(on) *QG to minimize the on-state resistance while maintaining superior switching performance

1.2. sqm120n06-3m5l.pdf Size:168K _upd-mosfet

20N06
20N06

SQM120N06-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 60 • Package with Low Thermal Resistance RDS(on) () at VGS = 10 V 0.0035 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V 0.0039 • 100 % Rg and UIS Tested ID (A) 120 • Material categorization: Configuration Single

 1.3. msd20n06.pdf Size:541K _upd-mosfet

20N06
20N06

MSD20N06 N-Channel 60-V (D-S) MOSFET Description The MSD20N06 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • White LED boost converters • Autom

1.4. sqm120n06-04l.pdf Size:750K _upd-mosfet

20N06
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SQM120N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) () at VGS = 10 V 0.0035 • TrenchFET® Power MOSFET RDS(on) () at VGS = 4.5 V 0.0050 • Package with Low Thermal Resistance ID (A) 120 • AEC-Q101 Qualifiedd Configuration Single

 1.5. mse20n06n.pdf Size:442K _upd-mosfet

20N06
20N06

 Bruckewell Technology Corp., Ltd. MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES • Low RDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: •Battery Powered Instruments •Portable Computing •Mobile Phones •GPS Units and Media Players Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited

1.6. sqm120n06-06.pdf Size:184K _upd-mosfet

20N06
20N06

SQM120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 60 • Package with low thermal resistance RDS(on) (Ω) at VGS = 10 V 0.006 • AEC-Q101 qualified d ID (A) 120 • 100 % Rg and UIS tested Configuration Single Package TO-263 • Material categorization: for definitions of co

1.7. am20n06-90d.pdf Size:139K _upd-mosfet

20N06
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Analog Power AM20N06-90D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m(Ω) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 94 @ VGS = 10V 19 circuitry. Typical applications are PWMDC-DC 60 109 @ VGS = 4.5V 18 converters

1.8. am20n06-90i.pdf Size:334K _upd-mosfet

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Analog Power AM20N06-90I N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 94 @ VGS = 10V 19 • Low thermal impedance 60 109 @ VGS = 4.5V 18 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

1.9. sqp120n06-06.pdf Size:146K _upd-mosfet

20N06
20N06

SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 60 • Package with low thermal resistance RDS(on) (Ω) at VGS = 10 V 0.006 • AEC-Q101 qualified d ID (A) 119 • 100 % Rg and UIS tested Configuration Single Package TO-220 • Material categorization: for definitions of co

1.10. kx020n06.pdf Size:449K _update_mosfet

20N06
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MOSFET e IC SMD Type SMDType IC DIP Type IC SMDType MOSFET DIP Type MOSFET SMD Type SMD Type Product specification KX020N06 ■ Features ● VDS (V) = 60V ● ID = 2 A (VGS = 10V) ● < 200mΩ (V = 10V) DS(ON) GS R ● < 280mΩ (V = 4.5V) DS(ON) GS R ● < Ω RDS

1.11. chm20n06pagp.pdf Size:97K _update_mosfet

20N06
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CHENMKO ENTERPRISE CO.,LTD CHM20N06PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

1.12. wfd20n06.pdf Size:267K _update_mosfet

20N06
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WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed t

1.13. mtd20n06h.pdf Size:274K _motorola

20N06
20N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N06HD/D Designer's? Data Sheet MTD20N06HD HDTMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 20 AMPERES NChannel EnhancementMode Silicon Gate 60 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.045 OHM high energy in the avalanche a

1.14. mtd20n06vrev1.pdf Size:257K _motorola

20N06
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N06V/D Designer's? Data Sheet MTD20N06V TMOS V? Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 20 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.080 OHM tance area product about onehalf that of standard MOSFETs. Thi

1.15. mtd20n06v.pdf Size:222K _motorola

20N06
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N06V/D Designer's? Data Sheet MTD20N06V TMOS V? Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 20 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.080 OHM tance area product about onehalf that of standard MOSFETs. Thi

1.16. mtp20n06v.pdf Size:209K _motorola

20N06
20N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N06V/D Designer's? Data Sheet MTP20N06V ? TMOS V Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an onresis- 20 AMPERES tance area product about onehalf that of standard MOSFETs. This 60 VOLTS new technology more than doubles the pre

1.17. mtd20n06hdl.pdf Size:253K _motorola

20N06
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA bt MTD20N06HDL/D Advance Information MTD20N06HDL HDTMOS E-FET ? Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount or LOGIC LEVEL Insertion Mount 20 AMPERES 60 VOLTS NChannel EnhancementMode Silicon Gate RDS(on) = 0.045 OHM This advanced highcell density HDTMOS EFET is designed to wi

1.18. mtd20n06hd.pdf Size:293K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA bt MTD20N06HDL/D Advance Information MTD20N06HDL HDTMOS E-FET ? Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount or LOGIC LEVEL Insertion Mount 20 AMPERES 60 VOLTS NChannel EnhancementMode Silicon Gate RDS(on) = 0.045 OHM This advanced highcell density HDTMOS EFET is designed to wi

1.19. phx20n06t.pdf Size:91K _philips2

20N06
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PHX20N06T N-channel TrenchMOS™ standard level FET Rev. 01 — 16 February 2004 Product data M3D308 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. 1.2 Features Standard level compatible Isolated package. 1.3 Applications DC motor control Synchronous rectification DC-to

1.20. php20n06e 1.pdf Size:54K _philips2

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Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22 A Switched Mode Power Supplies Ptot Total power dissipation 75 W (SMPS), motor

1.21. php20n06t phb20n06t.pdf Size:334K _philips2

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PHP20N06T; PHB20N06T N-channel TrenchMOS transistor Rev. 01 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applications Switched

1.22. stp20n06-fi.pdf Size:399K _st

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STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N06 60 V < 0.085 ? 20 A STP20N06FI 60 V < 0.085 ? 13 A TYPICAL R = 0.06 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED TO-22

1.23. stp20n06.pdf Size:391K _st

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STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N06 60 V < 0.085 ? 20 A STP20N06FI 60 V < 0.085 ? 13 A TYPICAL R = 0.06 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED TO-22

1.24. fqp20n06tstu.pdf Size:654K _fairchild_semi

20N06
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May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

1.25. fqd20n06tf fqd20n06tm.pdf Size:745K _fairchild_semi

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January 2009 QFET® FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especi

1.26. fqb20n06ltm.pdf Size:681K _fairchild_semi

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May 2001 TM QFET FQB20N06L / FQI20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been esp

1.27. fqd20n06l.pdf Size:855K _fairchild_semi

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Mar 2009 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been es

1.28. fqpf20n06.pdf Size:653K _fairchild_semi

20N06
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May 2001 TM QFET FQPF20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15A, 60V, RDS(on) = 0.06? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast swi

1.29. fqd20n06l fqu20n06l.pdf Size:664K _fairchild_semi

20N06
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May 2001 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06? @ VGS = 10V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tail

1.30. fdp020n06b.pdf Size:668K _fairchild_semi

20N06
20N06

November 2013 FDP020N06B N-Channel PowerTrench® MOSFET 60 V, 313 A, 2 mΩ Features Description • RDS(on) = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance.

1.31. fqb20n06tm.pdf Size:669K _fairchild_semi

20N06
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May 2001 TM QFET FQB20N06 / FQI20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially

1.32. fqd20n06 fqu20n06.pdf Size:745K _fairchild_semi

20N06
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January 2009 QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063? @ VGS = 10V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.33. fqu20n06tu.pdf Size:745K _fairchild_semi

20N06
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January 2009 QFET® FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especi

1.34. fqp20n06.pdf Size:655K _fairchild_semi

20N06
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May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast swit

1.35. fdpf320n06l.pdf Size:220K _fairchild_semi

20N06
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December 2010 FDPF320N06L N-Channel PowerTrench® MOSFET 60V, 21A, 25mΩ Features Description • RDS(on) = 20mΩ ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been • RDS(on) = 23mΩ ( Typ.)@ VGS = 5V, ID = 17A especially tailored to minimize the on-state resistance and yet maintain superior sw

1.36. fqp20n06l.pdf Size:673K _fairchild_semi

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May 2001 TM QFET FQP20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to Fa

1.37. fqpf20n06l.pdf Size:661K _fairchild_semi

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May 2001 TM QFET FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.7A, 60V, RDS(on) = 0.055? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to

1.38. rhp020n06.pdf Size:221K _rohm

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4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol : LR Applications Switching Packaging specifications and hFE Inner circuit DRAIN Package Taping Ty

1.39. rsr020n06.pdf Size:193K _rohm

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4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. (1) (2) 2) Built-in G-S Protection Diode. 0.95 0.95 0.16 3) Small Surface Mount Package (TSMT3) . 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : PZ (3) Drain Application Switching I

1.40. rjp020n06.pdf Size:54K _rohm

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RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) Low voltage drive (2.5V drive). 0.4 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate Applications (2)Drain Switching (3)Source Abbreviated symbol : LS Packaging specifications Inner circuit

1.41. ipd220n06l3 rev2.0.pdf Size:448K _infineon

20N06
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pe % # ! % (>.;?6?@<> %><1A0@ 'A::.>E Features D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 m D n) m x R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D Type #* ( & ! Package G? O? ? Marking N "

1.42. ipg20n06s2l-65 ds 10.pdf Size:162K _infineon

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IPG20N06S2L-65 OptiMOS Power-Transistor Product Summary V 55 V DS 3) 65 m? R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-65 PG-TDSON-8-4 2N06L65 Maximum rating

1.43. ipg20n06s2l-50 ds 10.pdf Size:162K _infineon

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IPG20N06S2L-50 OptiMOS Power-Transistor Product Summary V 55 V DS 4) 50 m? R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-50 PG-TDSON-8-4 2N06L50 Maximum rating

1.44. ipg20n06s4l-26 ds 1 0.pdf Size:144K _infineon

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IPG20N06S4L-26 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS 4) 26 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-26 PG-TDSON-8-4 4N06L26 Maximum rat

1.45. ipg20n06s2l-35 ds 10.pdf Size:162K _infineon

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IPG20N06S2L-35 OptiMOS Power-Transistor Product Summary V 55 V DS 4) 35 m? R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-35 PG-TDSON-8-4 2N06L35 Maximum rating

1.46. ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf Size:170K _infineon

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IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.4 m? DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

1.47. ipp020n06n.pdf Size:574K _infineon

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Type IPP020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS(on),max 2.0 mW • Superior thermal resistance ID 120 A • N-channel QOSS nC 119 • Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 • Pb-free lead plating; RoHS compliant •

1.48. ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf Size:170K _infineon

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IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m? DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Mark

1.49. ipb120n06ng ipp120n06ng.pdf Size:737K _infineon

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IPB120N06N G IPP120N06N G Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 11 7 m + >= < 0F +& D4@A8>= O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; I 7 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B O "0;>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' ! Package ? O ? ?1 ? O ? ? Marking

1.50. ipi020n06n.pdf Size:580K _infineon

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Type IPI020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS(on),max 2.0 mW • Superior thermal resistance ID 120 A • N-channel QOSS nC 119 • Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 • Pb-free lead plating; RoHS compliant •

1.51. ipg20n06s4l-11 ds 1 0.pdf Size:157K _infineon

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IPG20N06S4L-11 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS 4) 11.2 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-11 PG-TDSON-8-4 4N06L11 Maximum r

1.52. ipg20n06s4-15 ds 1 0.pdf Size:157K _infineon

20N06
20N06

IPG20N06S4-15 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS 4) 15.5 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4-15 PG-TDSON-8-4 4N0615 Maximum rat

1.53. ipg20n06s4l-14 ds 1 0.pdf Size:158K _infineon

20N06
20N06

IPG20N06S4L-14 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS 4) 13.7 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-14 PG-TDSON-8-4 4N06L14 Maximum r

1.54. ntd20n06l.pdf Size:82K _onsemi

20N06
20N06

NTD20N06L Power MOSFET 20 Amps, 60 Volts Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in http://onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V (Note 1) Pb-Free Packages are Available Typical Applications N-Channel D Power Supplies Conver

1.55. ntd20n06.pdf Size:116K _onsemi

20N06
20N06

NTD20N06 Power MOSFET 20 Amps, 60 Volts, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com Lower RDS(on) Lower VDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances 60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSD N-Channel Lower

1.56. mtd20n06v-d.pdf Size:221K _onsemi

20N06
20N06

MTD20N06V Power Field Effect Transistor N-Channel DPAK TMOS V is a new technology designed to achieve an on-resistance http://onsemi.com area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 V(BR)DSS RDS(on) TYP ID MAX volt TMOS devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand hig

1.57. utt120n06.pdf Size:127K _utc

20N06
20N06

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

1.58. utt20n06.pdf Size:148K _utc

20N06
20N06

UNISONIC TECHNOLOGIES CO., LTD UTT20N06 Power MOSFET 20A, 60V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UTT20N06 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC UTT20N

1.59. sid20n06-90i.pdf Size:640K _secos

20N06
20N06

SID20N06-90I 19A, 60V, RDS(ON) 94 m? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-251P DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES ? Low RDS(on) provides h

1.60. ssd20n06-90d.pdf Size:396K _secos

20N06
20N06

SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

1.61. mtb20n06j3.pdf Size:312K _cystek

20N06
20N06

Spec. No. : C925J3 Issued Date : 2013.08.13 CYStech Electronics Corp. Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06J3 ID 42A RDS(ON)@VGS=10V, ID=20A 14.6 mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 16.7 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic

1.62. 20n06.pdf Size:1175K _goford

20N06
20N06

GOFORD .20N06 DESCRIPTION The . 2 0N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDSS R DS(ON) ID Schematic diagram @ 10V (typ) 60V 18 m Ω 25 A ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current

1.63. cm120n06.pdf Size:126K _jdsemi

20N06
20N06

R CM120N06 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆60V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于 US P 开关电源、逆变器 等功率开关电路 2.主要特点 开关速度快 驱动简单,可并联使用 3.封装外形

1.64. ftk20n06d.pdf Size:425K _first_silicon

20N06
20N06

SEMICONDUCTOR FTK20N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 ± 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 ± 0 2 C 5 20 ± 0 2 It can be used in awide variety of applications. D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 H H 1 00 MAX I 2 30 ± 0

1.65. rhp020n06.pdf Size:1283K _kexin

20N06
20N06

SMD Type MOSFET N-Channel MOSFET RHP020N06 (KHP020N06) SOT-89 Unit:mm 1.70 0.1 ■ Features ● VDS (V) = 60V ● ID = 2 A (VGS = 10V) ● RDS(ON) < 200mΩ (VGS = 10V) ● RDS(ON) < 280mΩ (VGS = 4.5V) 0.42 0.1 0.46 0.1 ● RDS(ON) < 340mΩ (VGS = 4V) ● High speed switching 1.Gate 2.Drain 3.Source DRAIN GATE *2 *1 SOURCE *1 ESD PROTECTION DIODE *2 BODY DIOD

1.66. kx120n06.pdf Size:1520K _kexin

20N06
20N06

DIP Type MOSFET N-Channel MOSFET KX120N06 TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● VDS (V) = 60V ● ID = 100 A (VGS = 10V) ● RDS(ON) < 6.5mΩ (VGS = 10V) ● Special process technology for high ESD capability ● Fully characterized Avalanche voltage and current 1.27 ± 0.10 1.52 ± 0.10 2 1 3 0.80 ± 0.10 +0.10 0.50

1.67. msd20n06.pdf Size:541K _bruckewell

20N06
20N06

MSD20N06 N-Channel 60-V (D-S) MOSFET Description The MSD20N06 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • White LED boost converters • Autom

1.68. mse20n06n.pdf Size:442K _bruckewell

20N06
20N06

 Bruckewell Technology Corp., Ltd. MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES • Low RDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: •Battery Powered Instruments •Portable Computing •Mobile Phones •GPS Units and Media Players Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited

1.69. wfu20n06.pdf Size:270K _winsemi

20N06
20N06

WFU20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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