90N03 Datasheet and Replacement

Shenzhen Tuofeng Semiconductor Technology Co., Ltd90N03 Power-TransistorProduct SummaryV 30 VDSR 6.0mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedTO-251 MSL1 up to 260C peak reflow 175C operating temperature32 Green product (RoHS compliant)1 Ultra low Rds(on) 100% Avalanche testedTyp

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

STD90N03LSTD90N03L-1N-channel 30V - 0.005 - 80A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD90N03L 30V 0.0057 80A (1)STD90N03L-1 30V 0.0057 80A (1)332 11. Pulse width limited by safe operating area1 RDS(on)*Qg industrys benchmark Conduction losses reducedIPAKDPAK Switching losses reduced Low threshold

Preliminary Data Sheet R07DS0129EJ0100NP90N03VLG Rev.1.00Sep 24, 2010MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 3.2 m MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.0 m MAX. (VGS = 4.5 V, ID = 35 A) Low input c

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet R07DS0128EJ0100NP90N03VHG Rev.1.00Sep 24, 2010MOS FIELD EFFECT TRANSISTOR Description The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.2 m MAX. (VGS = 10 V, ID = 45 A) Low input capacitance Ciss = 5000 pF TYP. (VDS = 25 V, VGS =

RSS090N03 Transistors Switching (30V, 9A) RSS090N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP85.00.22) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.20.1 Application Power switching, DC/DC converter. 0.40.11.270.1Each lead has same dimensions Structure Silicon N-channel MOS FET Equivalent c

4V Drive Nch MOSFET RSH090N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5)Package Taping(8) (7)

Data Sheet4V Drive Nch MOSFETRXH090N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SOP8(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (4)3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TBBasic ordering unit (pieces

New ProductSUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0029 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0033 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerTO-220AB DC/DCDGDRAIN connected to TABG D S STop View

SUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0029 at VGS = 10 V 9030 82 nC0.0033 at VGS = 4.5 V 90APPLICATIONSTO-220AB OR-ingD Server DC/DCGDRAIN connected to TABSG

New ProductSUM90N03-2m2PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0022 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0027 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerDTO-263GG D STop ViewSOrdering Information: SUM90N03-2m

SUM90N03-2m2PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0022 at VGS = 10 V 9030 82 nCFor definitions of compliance please see0.0027 at VGS = 4.5 V 90www.vishay.com/doc?99912TO-263APPLICATIONSD OR-ing

BSC090N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 48 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

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TypeIPD090N03L G E8177 OptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Aval

IPD90N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 3.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N03S4L-03 PG-TO252-3-11 4N03L03

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TypeIPD090N03L G E8177 OptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Aval

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IPD90N03S4L-02OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 2.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD90N03S4L-02

UNISONIC TECHNOLOGIES CO., LTD UT90N03 Power MOSFET 90A, 30V N-CHANNEL(D-S) POWER MOSFET DESCRIPTION The UTC UT90N03 is an N-channel enhancement mode Power FET, it uses UTCs advanced technology to provide customers a minimum on-state resistance. The UTC UT90N03 is suitable for server and DC-DC converters. FEATURES * RDS(ON)=2.4m @ VGS=10V, ID=28.8A * Improv

Analog Power AM90N03-26PN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 26 @ VGS = 10Vconverters and power management in portable and 3088a40 @ VGS = 4.5Vbatter

Analog Power AM90N03-03PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)3.5 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

Analog Power AM90N03-08PN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10Vconverters and power management in portable and 3090a12 @ VGS = 4.5Vbattery

Analog Power AM90N03-01PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1.9 @ VGS = 10V Low thermal impedance 30120a2.9 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

Analog Power AM90N03-04DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)4.5 @ VGS = 10V86 Low thermal impedance 305.5 @ VGS = 4.5V78 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Analog Power AM90N03-04IN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.5 @ VGS = 10V 87converters and power management in portable and 305.5 @ VGS = 4.5V 78bat

Analog Power AM90N03-06BN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 6 @ VGS = 10Vconverters and power management such as 3090a7.2 @ VGS = 4.5Vcomputers, pri

Analog Power AM90N03-03BN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)3.8 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM90N03-02DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 2 @ VGS = 10V 130dissipation. Typical applications are DC-DC 30converters and power management in portable and 3.2 @ VGS = 4.5V 103bat

Spec. No. : C831N3 CYStech Electronics Corp. Issued Date : 2012.07.04 Revised Date : 2012.12.28 Page No. : 1/8 30V N-Channel Enhancement Mode MOSFET MTA90N03ZN3 BVDSS 30VID 3.2ARDSON@VGS=4.5V, ID=2.5A 130m(typ) Features RDSON@VGS=3V,ID=2.5A 144m(typ) Simple drive requirement. Small package outline. ESD protected. Pb-free lead plating and halogen-

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET RCS90N03 B3 General Description VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

DHB90N03B17/DHD90N03B1790A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.0mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resistance Low gate charge Fast

SMD Type MOSFETN-Channel MOSFETNDT90N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 30V4 ID = 85 A (VGS = 10V) RDS(ON) 5m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 8m (VGS = 4.5V) High Power and current handing capability Lead free product is acquired+ 0.12.3 0.60- 0.

ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME90N03 is the N-Channel logic enhancement mode power RDS(ON)4.8m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)9m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state resis

Jan 2016HRLFS190N03K30V N-Channel Trench MOSFET8DFN 3x3FEATURES BVDSS = 30 V ID = 28 A1 Unrivalled Gate Charge : 12 nC (Typ.) Lower RDS(ON) : 16 (Typ.) @VGS=10V Lower RDS(ON) : 20 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 30 VVGS Gate-Source Voltage

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu

June 2017 HRLFS90N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

SL90N03RDescription This Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features PDFN5*6-8L V =30VI =90A DS D R = 4.2m @V =10V DS ON TYP GS R =

WMK190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Features SDGTO-220 V = 30V, I = 190A DS DR

WMM190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance.GSFeatures TO-263 V = 30V, I = 190A DS DR

WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance.SGFeatures TO-252 V = 30V, I = 190A DS DR

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

AD90N03S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 5.8m@10V 30V 90A 8.0m@4.5V Feature Application High density cell design for ultra low Rdson DC/DC converters Fully characterized avalanche voltage and current Synchronous Rectifier Good stability and uniformity with high EAS Excellent package for good heat dissipation Package

HSH190N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH190N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 1.9 m buck converter applications. ID 190 A The HSH190N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

HSU90N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU90N03 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi

HTD090N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness50 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN -CHANNEL ENHANCEMENT MODE POWER MOSFET90N03LTO-251 Power-TransistorProduct SummaryV 30 VDSSDR 6.0mDS(on),max GEquivalent CircuitI 90 ADDFeatures N-channel - Enhancement modeG Automotive AEC Q101 qualifiedS MSL1 up to 260C peak reflowMARKING 175C operating temperature Green

VBZE90N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.003.8at VGS = 10 V 12030 70 nC0.006at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

TTD90N03AT, TTP90N03AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In

isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03LFEATURESStatic drain-source on-resistance:RDS(on)9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Ga