90N03 datasheet, подбор замены

 ..1. Size:1101K  shenzhen
 90n03.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 90N03 Power-Transistor Product Summary V 30 V DS R 6.0 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified TO-251 MSL1 up to 260 C peak reflow 175 C operating temperature 3 2 Green product (RoHS compliant) 1 Ultra low Rds(on) 100% Avalanche tested Typ

 0.1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf 

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

 0.2. Size:588K  1
 ap90n03q.pdf 

 0.3. Size:317K  st
 std90n03l std90n03l-1.pdf 

STD90N03L STD90N03L-1 N-channel 30V - 0.005 - 80A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STD90N03L 30V 0.0057 80A (1) STD90N03L-1 30V 0.0057 80A (1) 3 3 2 1 1. Pulse width limited by safe operating area 1 RDS(on)*Qg industry s benchmark Conduction losses reduced IPAK DPAK Switching losses reduced Low threshold

 0.4. Size:229K  renesas
 np90n03vlg.pdf 

Preliminary Data Sheet R07DS0129EJ0100 NP90N03VLG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 3.2 m MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.0 m MAX. (VGS = 4.5 V, ID = 35 A) Low input c

 0.5. Size:311K  renesas
 np90n03vug.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.6. Size:219K  renesas
 np90n03vhg.pdf 

Preliminary Data Sheet R07DS0128EJ0100 NP90N03VHG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.2 m MAX. (VGS = 10 V, ID = 45 A) Low input capacitance Ciss = 5000 pF TYP. (VDS = 25 V, VGS =

 0.7. Size:57K  rohm
 rss090n03fu6tb.pdf 

RSS090N03 Transistors Switching (30V, 9A) RSS090N03 External dimensions (Unit mm) Features 1) Low on-resistance. SOP8 5.0 0.2 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.2 0.1 Application Power switching, DC/DC converter. 0.4 0.1 1.27 0.1 Each lead has same dimensions Structure Silicon N-channel MOS FET Equivalent c

 0.8. Size:167K  rohm
 rsh090n03tb1.pdf 

4V Drive Nch MOSFET RSH090N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping (8) (7)

 0.9. Size:1068K  rohm
 rxh090n03.pdf 

Data Sheet 4V Drive Nch MOSFET RXH090N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (4) 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces

 0.10. Size:83K  vishay
 sup90n03.pdf 

New Product SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested 0.0029 at VGS = 10 V 90 RoHS 30 82 nC COMPLIANT 0.0033 at VGS = 4.5 V 90 APPLICATIONS OR-ing Server TO-220AB DC/DC D G DRAIN connected to TAB G D S S Top View

 0.11. Size:184K  vishay
 sup90n03-03.pdf 

SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0029 at VGS = 10 V 90 30 82 nC 0.0033 at VGS = 4.5 V 90 APPLICATIONS TO-220AB OR-ing D Server DC/DC G DRAIN connected to TAB S G

 0.12. Size:114K  vishay
 sum90n03.pdf 

New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested 0.0022 at VGS = 10 V 90 RoHS 30 82 nC COMPLIANT 0.0027 at VGS = 4.5 V 90 APPLICATIONS OR-ing Server D TO-263 G G D S Top View S Ordering Information SUM90N03-2m

 0.13. Size:177K  vishay
 sum90n03-2m2p.pdf 

SUM90N03-2m2P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0022 at VGS = 10 V 90 30 82 nC For definitions of compliance please see 0.0027 at VGS = 4.5 V 90 www.vishay.com/doc?99912 TO-263 APPLICATIONS D OR-ing

 0.14. Size:521K  infineon
 bsc090n03lsg.pdf 

BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

 0.15. Size:1344K  infineon
 ips090n03l.pdf 

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 0.16. Size:1332K  infineon
 ipd090n03lg6.pdf 

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 0.17. Size:750K  infineon
 ipd090n03lge8177.pdf 

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval

 0.18. Size:157K  infineon
 ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf 

IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 3.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N03S4L-03 PG-TO252-3-11 4N03L03

 0.19. Size:668K  infineon
 ipd090n03lg .pdf 

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 0.20. Size:686K  infineon
 bsc090n03ls.pdf 

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 0.21. Size:680K  infineon
 bsc090n03msg.pdf 

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 0.22. Size:712K  infineon
 ipd090n03l.pdf 

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval

 0.23. Size:1347K  infineon
 ipd090n03lg9.pdf 

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 0.24. Size:160K  infineon
 ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf 

IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 2.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD90N03S4L-02

 0.25. Size:215K  utc
 ut90n03.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT90N03 Power MOSFET 90A, 30V N-CHANNEL(D-S) POWER MOSFET DESCRIPTION The UTC UT90N03 is an N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a minimum on-state resistance. The UTC UT90N03 is suitable for server and DC-DC converters. FEATURES * RDS(ON)=2.4m @ VGS=10V, ID=28.8A * Improv

 0.26. Size:117K  analog power
 am90n03-26p.pdf 

Analog Power AM90N03-26P N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 26 @ VGS = 10V converters and power management in portable and 30 88a 40 @ VGS = 4.5V batter

 0.27. Size:295K  analog power
 am90n03-03p.pdf 

Analog Power AM90N03-03P N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 3.5 @ VGS = 10V Low thermal impedance 30 90a 4.6 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

 0.28. Size:117K  analog power
 am90n03-08p.pdf 

Analog Power AM90N03-08P N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V converters and power management in portable and 30 90a 12 @ VGS = 4.5V battery

 0.29. Size:286K  analog power
 am90n03-01p.pdf 

Analog Power AM90N03-01P N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 1.9 @ VGS = 10V Low thermal impedance 30 120a 2.9 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

 0.30. Size:302K  analog power
 am90n03-04d.pdf 

Analog Power AM90N03-04D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 4.5 @ VGS = 10V 86 Low thermal impedance 30 5.5 @ VGS = 4.5V 78 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 0.31. Size:73K  analog power
 am90n03-04i.pdf 

Analog Power AM90N03-04I N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.5 @ VGS = 10V 87 converters and power management in portable and 30 5.5 @ VGS = 4.5V 78 bat

 0.32. Size:53K  analog power
 am90n03-06b.pdf 

Analog Power AM90N03-06B N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 6 @ VGS = 10V converters and power management such as 30 90a 7.2 @ VGS = 4.5V computers, pri

 0.33. Size:319K  analog power
 am90n03-03b.pdf 

Analog Power AM90N03-03B N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 3.8 @ VGS = 10V Low thermal impedance 30 90a 4.6 @ VGS = 4.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.34. Size:57K  analog power
 am90n03-02d.pdf 

Analog Power AM90N03-02D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 2 @ VGS = 10V 130 dissipation. Typical applications are DC-DC 30 converters and power management in portable and 3.2 @ VGS = 4.5V 103 bat

 0.35. Size:308K  cystek
 mta90n03zn3.pdf 

Spec. No. C831N3 CYStech Electronics Corp. Issued Date 2012.07.04 Revised Date 2012.12.28 Page No. 1/8 30V N-Channel Enhancement Mode MOSFET MTA90N03ZN3 BVDSS 30V ID 3.2A RDSON@VGS=4.5V, ID=2.5A 130m (typ) Features RDSON@VGS=3V,ID=2.5A 144m (typ) Simple drive requirement. Small package outline. ESD protected. Pb-free lead plating and halogen-

 0.36. Size:729K  crhj
 cs90n03 b4.pdf 

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25 ) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.37. Size:726K  crhj
 cs90n03 b3.pdf 

Silicon N-Channel Power MOSFET R CS90N03 B3 General Description VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25 ) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.38. Size:1086K  cn wxdh
 dhb90n03b17 dhd90n03b17.pdf 

DHB90N03B17/DHD90N03B17 90A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 4.0m DS(on) (TYP) standard. 1 3 S I = 90A D 2 Features Low on resistance Low gate charge Fast

 0.39. Size:1904K  kexin
 ndt90n03.pdf 

SMD Type MOSFET N-Channel MOSFET NDT90N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 30V 4 ID = 85 A (VGS = 10V) RDS(ON) 5m (VGS = 10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 8m (VGS = 4.5V) High Power and current handing capability Lead free product is acquired + 0.1 2.3 0.60- 0.

 0.40. Size:2430K  maple semi
 sld90n03tb.pdf 

SLD90N03TB 30V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s - 99A 1), 30V, RDS(on)typ = 3.6m @VGS = 10 V RDS(on)typ = 6.5m @VGS = 4.5V advanced TRENCH technology. This advanced technology has been especially tailored to minimize - Very Low On-resistance RDS(ON) - Low Crss conduction loss, provide superior switching performance, and -

 0.41. Size:1207K  matsuki electric
 me90n03 me90n03-g.pdf 

ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME90N03 is the N-Channel logic enhancement mode power RDS(ON) 4.8m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 9m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state resis

 0.42. Size:239K  semihow
 hrlfs190n03k.pdf 

Jan 2016 HRLFS190N03K 30V N-Channel Trench MOSFET 8DFN 3x3 FEATURES BVDSS = 30 V ID = 28 A 1 Unrivalled Gate Charge 12 nC (Typ.) Lower RDS(ON) 16 (Typ.) @VGS=10V Lower RDS(ON) 20 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage

 0.43. Size:715K  semihow
 hrlf190n03k.pdf 

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu

 0.44. Size:586K  semihow
 hrlfs90n03k.pdf 

June 2017 HRLFS90N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

 0.45. Size:1248K  slkor
 sl90n03r.pdf 

SL90N03R Description This Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features PDFN5*6-8L V =30V I =90A DS D R = 4.2m @V =10V DS ON TYP GS R =

 0.46. Size:620K  way-on
 wmk190n03ts.pdf 

WMK190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMK190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G TO-220 V = 30V, I = 190A DS D R

 0.47. Size:694K  way-on
 wmm190n03ts.pdf 

WMM190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMM190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. G S Features TO-263 V = 30V, I = 190A DS D R

 0.48. Size:631K  way-on
 wmo190n03ts.pdf 

WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 30V, I = 190A DS D R

 0.49. Size:845K  wuxi china
 cs90n03b4.pdf 

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25 ) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.50. Size:606K  allpower
 ap90n03gd.pdf 

 0.51. Size:588K  allpower
 ap90n03q.pdf 

 0.52. Size:1303K  anbon
 ad90n03s.pdf 

AD90N03S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 5.8m @10V 30V 90A 8.0m @4.5V Feature Application High density cell design for ultra low Rdson DC/DC converters Fully characterized avalanche voltage and current Synchronous Rectifier Good stability and uniformity with high EAS Excellent package for good heat dissipation Package

 0.53. Size:739K  huashuo
 hsh190n03.pdf 

HSH190N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH190N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 1.9 m buck converter applications. ID 190 A The HSH190N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

 0.54. Size:446K  huashuo
 hsu90n03.pdf 

HSU90N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU90N03 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi

 0.55. Size:1237K  jiejie micro
 jmtq190n03a.pdf 

 0.56. Size:903K  cn hunteck
 htd090n03.pdf 

HTD090N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 50 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TO-252 Gate 2 Src 3 1 Part

 0.57. Size:4033K  cn tuofeng
 90n03l.pdf 

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET 90N03L TO-251 Power-Transistor Product Summary V 30 V DS S D R 6.0 m DS(on),max G Equivalent Circuit I 90 A D D Features N-channel - Enhancement mode G Automotive AEC Q101 qualified S MSL1 up to 260 C peak reflow MARKING 175 C operating temperature Green

 0.58. Size:829K  cn vbsemi
 vbze90n03.pdf 

VBZE90N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.003.8at VGS = 10 V 120 30 70 nC 0.006at VGS = 4.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A

 0.59. Size:450K  cn wuxi unigroup
 ttd90n03at ttp90n03at.pdf 

TTD90N03AT, TTP90N03AT Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In

 0.60. Size:930K  cn shandong baocheng elec
 bcd90n03.pdf 

BCD90N03 Description N-channel Enhancement Mode Power MOSFET Features Application 30V,90A Load Switch R

 0.61. Size:242K  inchange semiconductor
 ipd090n03l.pdf 

isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga