SSS1N60 Datasheet and Replacement
Type Designator: SSS1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: TO220F TO251
SSS1N60 substitution
SSS1N60 Datasheet (PDF)
sss1n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS1N60SSS1N60 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 8.5 @VGS = 10 Vtransistors are produced using proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been
Datasheet: XP151A13AO , XP152A12CO , 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 , RU7088R , SSS2N60 , SSS5N60 , SSS7N60 , SSS8N60 , 1002 , 1115 , 1515 , G1601 .
History: IRLD110
Keywords - SSS1N60 MOSFET datasheet
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History: IRLD110
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