SSS1N60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SSS1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.9 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO220F TO251

SSS1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSS1N60 Datasheet (PDF)

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sss1n60.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS1N60SSS1N60 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 8.5 @VGS = 10 Vtransistors are produced using proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been

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sss1n60a.pdf