SSS7N60 PDF and Equivalents Search

 

SSS7N60 Specs and Replacement

Type Designator: SSS7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

SSS7N60 substitution

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SSS7N60 datasheet

 ..1. Size:779K  shenzhen
sss7n60.pdf pdf_icon

SSS7N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 600Volts 7.0Amps 600Volts 600Volts 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara... See More ⇒

 0.1. Size:921K  fairchild semi
ssp7n60b sss7n60b.pdf pdf_icon

SSS7N60

SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switchi... See More ⇒

 0.2. Size:504K  samsung
sss7n60a.pdf pdf_icon

SSS7N60

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.977 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

 0.3. Size:201K  inchange semiconductor
sss7n60b.pdf pdf_icon

SSS7N60

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SSS7N60B FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

Detailed specifications: 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , SSS5N60 , IRLB3034 , SSS8N60 , 1002 , 1115 , 1515 , G1601 , 2300 , 2301 , 2302 .

Keywords - SSS7N60 MOSFET specs

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