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SSS7N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSS7N60
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 142 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 7 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 29 nC
   Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для SSS7N60

 

 

SSS7N60 Datasheet (PDF)

 ..1. Size:779K  shenzhen
sss7n60.pdf

SSS7N60
SSS7N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60600Volts7.0Amps 600Volts600Volts600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS7N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a highrugged avalanche chara

 0.1. Size:921K  fairchild semi
ssp7n60b sss7n60b.pdf

SSS7N60
SSS7N60

SSP7N60B/SSS7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switchi

 0.2. Size:504K  samsung
sss7n60a.pdf

SSS7N60
SSS7N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 0.3. Size:201K  inchange semiconductor
sss7n60b.pdf

SSS7N60
SSS7N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SSS7N60BFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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