2300 Datasheet and Replacement

GOFORD2300Description The2300 designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Schematic diagram Features VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Ty

2300 MOSFET(N-Channel)V(BR)DSS RDS(ON)MAX IDSOT-23 25m@4.5V20V 4.5ASOT-23 Plastic-Encapsulate MOSFET32m@2.5VSOT-23 Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter. Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package. UL Epoxy

BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook

DISCRETE SEMICONDUCTORSDATA SHEETPTB23006UMicrowave power transistor1997 Feb 19Preliminary specificationSupersedes data of December 1994Philips Semiconductors Preliminary specificationMicrowave power transistor PTB23006UFEATURES QUICK REFERENCE DATAMicrowave performance up to Tmb =25C in a common-base class C Very high power gainnarrowband amplifier. Diffused

DISCRETE SEMICONDUCTORSDATA SHEETPTB23002UNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor PTB23002UFEATURES QUICK REFERENCE DATAMicrowave performance up to Tmb =25C in a common-base class C Very high power gainnarrowband amplifier. Internal

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D031PTB23003XNPN microwave power transistor1997 Nov 13Product specificationSupersedes data of 1997 Feb 19Philips Semiconductors Product specificationNPN microwave power transistor PTB23003XFEATURES PINNING - SOT440A Diffused emitter ballasting resistors providing excellentPIN DESCRIPTIONcurrent sharing and with

DISCRETE SEMICONDUCTORSDATA SHEETPHC2300Complementary enhancementmode MOS transistors1997 Oct 24Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationComplementary enhancement modePHC2300MOS transistorsFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION

PHC2300Complementary enhancement mode MOS transistorsRev. 05 24 February 2011 Product data sheet1. Product profile1.1 General descriptionOne N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and ben

New ProductSi2300DSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.068 at VGS = 4.5 V TrenchFET Power MOSFET3.6a30 3 nC 100 % Rg Tested0.085 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converter for

A Product Line ofDiodes IncorporatedDMN2300UFB420V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID V(BR)DSS RDS(ON) TA = +25C 0.4mm profile ideal for low profile applications (Note 5) Low Gate Threshold Voltage 175m @ VGS = 4.5V 1.30A Fast Switching Speed 240m @ VGS =

A Product Line ofDiodes IncorporatedDMN2300UFD20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) Lead Free, RoHS Compliant (Note 1) 200m @ VGS = 4.5V 1.73A Halogen and Antimony Free. "Green" Device (Note 2) 260m @ VGS = 2.5V

DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Footprint of Just 1.3 mm2 TA = +25C V(BR)DSS Max RDS(on) Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance

A Product Line ofDiodes IncorporatedDMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance

SIL2300Features Trench Power LV MOSFET Technology High Power and Current Handing CapabilityDual Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSMOSFETCompliant. See Ordering Information)Maximum Ratings@ 25

Doc No. TT4-EA-15020Revision. 2Product StandardsMOS FETFC8V22300LFC8V22300LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 15 mWVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:

Document Number: MRF6V2300NFreescale SemiconductorRev. 5, 4/2010Technical DataRF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsMRF6V2300NR1Designed primarily for CW large--signal output and driver applications withMRF6V2300NBR1frequencies up to 600 MHz. Devices are unmatched and are suitable for use inindustrial, medical and scientific application

2SD2300Silicon NPN Triple DiffusedApplicationCTV horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V Built-in damper diode typeOutlineTO-3PFM211. Base ID2. Collector 3. Emitter13232SD2300Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCES 1500 VEmitter to base voltage VEBO 6V

SI230020V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A 70m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 80m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions DGSSOT-23(PACKAGE)Millimeter Millime

Analog Power AM2300NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.320power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5applications are DC-DC converters,

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type ICSMD Type MOSFETN-Channel Enhancement Mode Field Effect TransistorSI2300SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3V DS=20V,RDS(ON)=30m @VGS=10V,ID=6.0AV DS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0AV DS=20V,,RDS(ON)=55m @V GS=2.5V,ID=2.0A 12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emi

Spec. No. : C413N3 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2015.11.12 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2300N3 ID @VGS=4.5V, TA=25C 6.3A 23m(typ.) RDSON@VGS=4.5V, ID=6A 30m(typ.) RDSON@VGS=2.5V, ID=5.2A 64m(typ.) RDSON@VGS=1.5V, ID=500mA Features Low on-resistance Capable of 2.5V gate dr

Spec. No. : C323N3 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET BVDSS 20VMTN2300AN3 ID@VGS=4.5V, TA=25C 3.6A 29m(typ.) RDSON@VGS=4.5V, ID=3.6A 39m(typ.) RDSON@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-fr

GOFORD2300FDescription The2300F designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Schematic diagram Features VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V

S TS 2300SS amHop Microelectronics C orp.S ep. 8 2005N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.35 @ VG S = 4.5V6A20V45 @ VG S = 2.5VS OT-23 package.DS OT-23GSAB S OLUTE MAXIMUM R ATING (TA=25 C unless otherwise noted)L

SSF2300DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

SSF2300A DDESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

SSF2300B DDESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2300 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9 A PD Power

BRCS2300MC Rev.A Sep.-2021 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features RDS(ON)SOT23-3 Low RDS(ON),SOT23-3 package,HF Product. / Applications DC-DC Battery management,High spee

BRCS2300MA Rev.B Aug.-2023 DATA SHEET / Descriptions SOT-23 N N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Low R ,SOT-23 package,HF Product. DS(ON) / Applications DC-DC Battery management,High spee

SM2300NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (max.) @ VGS=10VRDS(ON)=30m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=60m (max.) @ VGS=1.8V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant) ESD ProtectionGApplications Power Management in Notebook Computer

SM2300NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m(max.) @ VGS= 4.5VSRDS(ON)= 55m(max.) @ VGS= 2.5VGRDS(ON)= 85m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFET

APM2300CAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (typ.) @ VGS=10VSRDS(ON)=32m (typ.) @ VGS=4.5VGRDS(ON)=40m (typ.) @ VGS=2.5VRDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Port

Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance

SMD Type ICSMD Type MOSFETN-Channel Enhancement Mode Field Effect TransistorKI2300(SI2300)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETSI2300 (KI2300)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS=20V3ID=5.0ARDS(ON)=25m @VGS=4.5V,ID=5.0ARDS(ON)=35m @VGS=2.5V,ID=4.0A1 2+0.02+0.10.15 -0.020.95 -0.1RDS(ON)=55m @VGS=1.8V,ID=1.0A+0.11.9 -0.21. Gate2. Source3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETSI2300 (KI2300)SOT-23-3Unit: mm+0.22.9-0.1Features+0.10.4 -0.1VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A3VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.21. Gate2. Source3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol R

SMD Type ICSMD Type TransistorsComplementary EnhancementMode MOS TransistorsKHC2300FeaturesHigh-speed switchingNo secondary breakdown.Absolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain to Source Voltage VDSS 300 -300 VGate to Source Voltage VGS 20 20 VDrain Current Ts = 80 *1 ID 340 -235 Apeak drain current *2 IDM 14 -0.9 A1.6total power

SMD Type ICSMD Type MOSFETN-Channel Enhancement Mode Field Effect TransistorSI2300 (KI2300)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorA

AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement 20V/4.0A, R =26m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/3.0A, R =31m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/2.0A, R =44m(typ.)@V =1.8

GDSSF2300 DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

MOSFET TRANSISTORS 2300 KIA SEMICONDUCTORS 1. Features VDS=20V,RDS(ON)=30m@ VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m@ VGS=4.5V,ID=3.0A VDS=20V,RDS(ON)=55m@ VGS=2.5V,ID=2.0A 2. Pin information DPin Function 1 GateG 2 Source3 DrainS3. Maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 VGate-source volt

Power Module1200V 300A IGBT ModuleRoHSMG12300WB-BN2MMFeatures IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail currentApplications AC motor control Photovoltaic/Fuel cell Mot

Power Module1200V 300A IGBT ModuleRoHSMG12300D-BA1MMFeatures Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristic

Power Module1200V IGBT FamilyRoHSMG12300D-BN3MM Series 300A Dual IGBT Features High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT CHIP(1200V NPT with fast and soft reverse technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicat

Power Module1200V IGBT FamilyRoHSMG12300D-BN2MM Series 300A Dual IGBT Features High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficient

STN2300A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD

STN2300 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS

SL2300N-Channel Power MOSFET DGeneral Features VDS = 20V,ID = 4.2A GRDS(ON)

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n

RUMWUMW SI2300AN-Channel 20-V(D-S) MOSFETUMW SI2300AID SOT-23 V(BR)DSS RDS(on)MAX 25m@4.5V20V 6 A1. GATE 34.5m@2.5V2. SOURCE 3. DRAIN APPLICATION FEA TURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC ConverterMARKING Equivalent Circuit C009TMaximum ratings (Ta=25 unless otherwise noted) Symbol Value Parameter Unit Dr

AS2300 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 32m@2.5V 4.5A 49m@1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking S0. Document ID Issued Date Revised Date Revision

BM2300MOSFET ROHSN-Channel MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol Limit UnitDrain-Source Voltage V 20 DSV Gate-Source Voltage V 12 GSContinuous Drain Cur

Eternal Semiconductor Inc. EN2300N-Channel High Density Trench MOSFET (20V, 5.4A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Tpy.23 @ VGS = 4.0V, ID=5.4A20V 5.4A30 @ VGS = 2.5V, ID=4.3AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package LeadPb-free and halogen-freeDrainEN2300 Pin Assignment & Symb

SI2300LOW VOLTAGE MOSFET (N-CHANNEL)FEATURES Ultra low on-resistance:V =20V,R =40m@V =4.5V,I =5ADS DS(ON) GS D For Low power DC to DC converter application For Load switch application Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1

HSS2300A N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSS2300A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 26 m and efficiency for most of the small power switching and load switch applications. ID 6 A The HSS2300A meet the RoHS and Green Product requirement with full function reliability approved

SOT-23 Plastic-Encapsulate TransistorsHX2300AMOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsV Drain-Source voltage 20 VDSV Gate-Source voltage 8 VGSI Drain current 2.5 ADP Power Dissipation 1 WDTj Junction Temperature 150

SOT-23-3 Plastic-Encapsulate TransistorsHX2300MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 8 VID Drain current 3.6 APD Power Dissipation 1 WTj Junction Temperature 150 Ts

JST230020V,5A N-Channel MosfetPACKAGEFEATURESRDS(ON) 25m @VGS=4.5VRDS(ON) 38m @VGS=2.5V APPLICATIONSPWM ApplicationsLoad SwitchPower ManagementMARKINGN-CHANNEL MOSFETAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V 20 VDSGate-Source Voltage V 12 VGSContinuous Drain Current I 5 ADPl

SI2300SOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Advanced Power MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 319.4m @ 4.5V20V 6.2A21.5m @ 3.3V1. GATE 2. SOURCE 13. DRAIN2FEATURE APPLICATION Low RDS(on) @VGS=4.5V Load Switch DC/DC Converter 3.3V Logic Level Control Switching Circuits Power ManagementMARKING Equivalent circuitD 2300G S

SOT-23 Plastic-Encapsulate MOSFETSSMD Type ICSMD Type MOSFETSI2300N-Channel 20-V(D-S) MOSFETSI2300V(BR)DSS RDS(on)MAX IDSOT-230.025@10V31.GATE20V6.0A0.032@4.5V2.SOURCE3.DRAIN10.040@2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageC009T wAPPLICATIONLoad Switc

PJM2300NSA-L N-Channel Enhancement Mode Power MOSFETFeatures SOT-23 Excellent R and Low Gate ChargeDS(ON) VDS= 20V I = 5.5A DR

PJM2300NSA N-Channel MOSFETFeature SOT-23 TrenchFET Power MOSFET Excellent R and Low Gate ChargeDS(on)Applications 1. Gate 2.Source 3.Drain Load Switch for Portable DevicesMarking: M02 DC/DC ConverterSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units

SI2300 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 70m RDS(ON), Vgs@ 2.5V, Ids@ 3.1A 80m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions DSOT-23GS MillimeterMillimeterR

WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR

SI2300N-Channel 20-V(D-S) MOSFET ID SOT-23-3L V(BR)DSS RDS(on)MAX 40m@4.5V20V3A1. GATE 75 m@2.5V2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 2300Maximum ratings (Ta=25 unless otherwise noted) Symbol Value Parameter Unit Drain-Source Volta

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSSMD Type ICSMD Type MOSFETTF2300N-Channel 20-V(D-S) MOSFETTF2300V(BR)DSS RDS(on)MAX IDSOT-230.025@10V31.GATE20V6.0A0.032@4.5V2.SOURCE3.DRAIN10.040@2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface

SI2300 SI2301 FeaturesVDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0AEquivalent CircuitMARKING23003400R34001.GATE2.SOURCE3.DRAINAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source V

WST2300 N-Ch MOSFETGeneral Description Product SummeryThe WST2300 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 50m 4.4Acharge for most of the small power switching and load switch applications. Applications The WST2300 meet the RoHS and Green Product requirement with full funct

WST2300A N-Ch MOSFETGeneral Description Product SummeryThe WST2300A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 60m 3.0Agate charge for most of the small power switching and load switch applications. Applications The WST2300A meet the RoHS and Green Product requirement with full

June 2015SE2300N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =50m @V =2.5VDS(ON) GSFOM R =40m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline

SI2300DS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

SM2300NSACwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

APM2300CACwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

SI2300BDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

AP2300GNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve

HM2300www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert

ST2300S23RGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

MT2300ACTRwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con

RoHS COMPLIANT YJL2300A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.5A D R ( at V =4.5V) 25 mohm DS(ON) GS R ( at V =2.5V) 32 mohm DS(ON) GS R ( at V =1.8V) 49 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

HM2300DN-Channel Enhancement Mode Power MOSFET Description DThe HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

HM2300BN-Channel Enhancement Mode Power MOSFET Description DThe HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

HM2300PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON)

HM2300CN-Channel Enhancement Mode Power MOSFET Description DThe HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

HM2300DRN-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gbattery protection or in other switching application. SGeneral Features VDS = 20V,ID = 8.0A Schematic diagram RDS(ON)

HM2300N-Channel Enhancement Mode Power MOSFET Description DThe HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

isc Silicon NPN Power Transistor 2SD2300DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV horizontal deflection output applications.ABSOLUTE MAXIMU