All MOSFET. 2300 Datasheet

 

2300 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2300

SMD Transistor Code: 2300

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 5.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 46 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: SOT23

2300 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2300 Datasheet (PDF)

1.1. st2300.pdf Size:382K _upd

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 ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

1.2. st2300srg.pdf Size:479K _upd

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 ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n

 1.3. stn2300a.pdf Size:368K _upd-mosfet

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STN2300A 20V N-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STN2300A is the N-Channel logic  20V/4.0A, RDS(ON) =22mΩ(typ.)@VGS =4.5V enhancement mode power field effect transistor is  20V/3.0A, RDS(ON) =25mΩ(typ.)@VGS =2.5V produced using high cell density. advanced trench  20V/2.0A, RDS(ON) =33mΩ(typ.)@VGS =1.8V technology to provide excellent RD

1.4. am2300n.pdf Size:232K _upd-mosfet

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Analog Power AM2300N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves VDS (V) rDS(on) (Ω)ID (A) energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.3 20 power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5 applications are DC-DC converters,

 1.5. am2300.pdf Size:333K _upd-mosfet

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AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement  20V/4.0A, R =26mΩ(typ.)@V =4.5V DS(ON) GS mode power field effect transistor is produced using  20V/3.0A, R =31mΩ(typ.)@V =2.5V DS(ON) GS high cell density. Advanced trench technology to  20V/2.0A, R =44mΩ(typ.)@V =1.8

1.6. stn2300.pdf Size:367K _upd-mosfet

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STN2300 20V N-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STN2300 is the N-Channel logic enhancement  20V/4.0A, RDS(ON) =26mΩ(typ.)@VGS =4.5V mode power field effect transistor is produced using  20V/3.0A, RDS(ON) =35mΩ(typ.)@VGS =2.5V high cell density. advanced trench technology to  20V/2.0A, RDS(ON) =50mΩ(typ.)@VGS =1.8V provide excellent RDS

1.7. ptb23006u 2.pdf Size:74K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor 1997 Feb 19 Preliminary specification Supersedes data of December 1994 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25C in a common-base class C Very high power gain narrowband amplifier. Diffused emitter

1.8. phc2300 2.pdf Size:119K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET PHC2300 Complementary enhancement mode MOS transistors 1997 Oct 24 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification Complementary enhancement mode PHC2300 MOS transistors FEATURES PINNING - SOT96-1 (SO8) High-speed switching PIN SYMBOL DESCRIPTION No se

1.9. ptb23003x 3.pdf Size:58K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor 1997 Nov 13 Product specification Supersedes data of 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X FEATURES PINNING - SOT440A Diffused emitter ballasting resistors providing excellent PIN DESCRIPTION current sharing and withstand

1.10. ptb23002u 2.pdf Size:73K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor PTB23002U FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25C in a common-base class C Very high power gain narrowband amplifier. Internal input pr

1.11. si2300ds.pdf Size:119K _vishay

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New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Qg (Typ.) ID (A) Definition 0.068 at VGS = 4.5 V • TrenchFET® Power MOSFET 3.6a 30 3 nC • 100 % Rg Tested 0.085 at VGS = 2.5 V 3.4 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter for

1.12. mrf6v2300n.pdf Size:1185K _freescale

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Document Number: MRF6V2300N Freescale Semiconductor Rev. 5, 4/2010 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6V2300NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2300NBR1 frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

1.13. 2sd2300.pdf Size:32K _hitachi

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2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features High breakdown voltage VCBO = 1500 V Built-in damper diode type Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SD2300 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6V Collecto

1.14. 2sd2300.pdf Size:44K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2300 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage Ў¤ Built-in damper diode APPLICATIONS Ў¤ For color TV horizontal output deflection applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж )

1.15. si2300.pdf Size:3364K _htsemi

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SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A 70m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 80m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter RE

1.16. mg12300d-bn2mm.pdf Size:1758K _igbt

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Power Module 1200V IGBT Family RoHS MG12300D-BN2MM Series 300A Dual IGBT ® Features • High short circuit • Fast switching and short capability, self limiting tail current short circuit current • Free wheeling diodes • IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery • VCE(sat) with positive • Low switching losses temperature coefficient

1.17. mg12300wb-bn2mm.pdf Size:1670K _igbt

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Power Module 1200V 300A IGBT Module RoHS MG12300WB-BN2MM Features • IGBT3 CHIP(Trench+Field • Free wheeling diodes Stop technology) with fast and soft reverse recovery • Low saturation voltage and positive temperature • Temperature sense coefficient included • Fast switching and short tail current Applications • AC motor control • Photovoltaic/Fuel cell • Mot

1.18. mg12300d-ba1mm.pdf Size:1818K _igbt

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Power Module 1200V 300A IGBT Module RoHS MG12300D-BA1MM ® Features • Ultra low loss • Positive temperature coefficient • High ruggedness • With fast free-wheeling • High short circuit diodes capability Applications • Inverter • SMPS and UPS • Converter • Induction heating • Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristic

1.19. mg12300d-bn3mm.pdf Size:1719K _igbt

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Power Module 1200V IGBT Family RoHS ® MG12300D-BN3MM Series 300A Dual IGBT Features • High short circuit • Fast switching and short capability, self limiting tail current short circuit current • Free wheeling diodes • IGBT CHIP(1200V NPT with fast and soft reverse technology) recovery • VCE(sat) with positive • Low switching losses temperature coefficient Applicat

1.20. mtn2300n3.pdf Size:357K _cystek

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Spec. No. : C413N3 Issued Date : 2007.07.05 CYStech Electronics Corp. Revised Date : 2014.04.22 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN2300N3 ID 6.3A 23mΩ(typ.) RDSON@VGS=4.5V, ID=6A 30mΩ(typ.) RDSON@VGS=2.5V, ID=5.2A 64mΩ(typ.) RDSON@VGS=1.5V, ID=500mA Features • Low on-resistance • Capable of 2.5V gate drive • Excellent the

1.21. 2300.pdf Size:1707K _goford

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GOFORD 2300 Description The 2300 designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Schematic diagram Features ♦ VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Ty

1.22. sts2300s.pdf Size:127K _samhop

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S TS 2300S S amHop Microelectronics C orp. S ep. 8 2005 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 35 @ VG S = 4.5V 6A 20V 45 @ VG S = 2.5V S OT-23 package. D S OT-23 G S AB S OLUTE MAXIMUM R ATING (TA=25 C unless otherwise noted) L

1.23. ssf2300a.pdf Size:401K _silikron

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SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5

1.24. ssf2300b.pdf Size:302K _silikron

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SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● V = 20V,I = 4.5A DS D R < 115mΩ @ V =2.5V DS(ON) GS R < 60mΩ @ V =

1.25. ssf2300.pdf Size:342K _silikron

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SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 55mΩ @ VGS=4.5V

1.26. cs2300 sot-23.pdf Size:213K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2300 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ±10 V ID Drain current 2.9 A PD Power

1.27. sm2300nsan.pdf Size:162K _sino

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® SM2300NSAN N-Channel Enhancement Mode MOSFET Features Pin Description • 20V/4A, D RDS(ON)= 40mΩ(max.) @ VGS= 4.5V S RDS(ON)= 55mΩ(max.) @ VGS= 2.5V G RDS(ON)= 85mΩ(max.) @ VGS= 1.8V Top View of SOT-23N • Reliable and Rugged • Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in DC/AC Inverter Systems. S N-Channel MOSFET

1.28. sm2300nsa.pdf Size:259K _sino

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SM2300NSA ® N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , D RDS(ON)=25m (max.) @ VGS=10V RDS(ON)=30m (max.) @ VGS=4.5V S RDS(ON)=40m (max.) @ VGS=2.5V G RDS(ON)=60m (max.) @ VGS=1.8V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) ESD Protection G Applications Power Management in Notebook Computer

1.29. dmn2300u.pdf Size:132K _tysemi

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Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits • On resistance <200mΩ V(BR)DSS RDS(on) ID Max (Note 5) • Low Gate Threshold Voltage • Fast Switching Speed 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C • “Lead Free”, RoHS Compliant (Note 1) 20V 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C • Halogen and A

1.30. si2300.pdf Size:603K _kexin

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SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 (KI2300) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector A

1.31. si2300-3.pdf Size:725K _kexin

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SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET SI2300 (KI2300) SOT-23-3 Unit: mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A 3 VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol R

1.32. si2300.pdf Size:2425K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 V DS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A V DS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A V DS=20V,,RDS(ON)=55m @V GS=2.5V,ID=2.0A 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emi

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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