All MOSFET. 2302 Datasheet

 

2302 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2302

SMD Transistor Code: 2302

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 2.9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: SOT23

2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2302 Datasheet (PDF)

1.1. st2302.pdf Size:187K _upd

2302
2302

 ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

1.2. am2302ne.pdf Size:108K _upd-mosfet

2302
2302

Analog Power AM2302NE N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) (Ω) ID (A) power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.4 20 power management in portable and 0.103 @ VGS = 2.5V 2

 1.3. shd230202.pdf Size:60K _upd-mosfet

2302
2302

SENSITRON SHD230202 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 319, REV. A HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES: œ 100 Volt, 0.35 Ohm, 6.2A MOSFET œ Fast Switching œ Low RDS (on) œ Equivalent to IRF120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - –20 Volts ID - - 6

1.4. afn2302as.pdf Size:652K _upd-mosfet

2302
2302

AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110mΩ@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 1.5. am2302n.pdf Size:285K _upd-mosfet

2302
2302

Analog Power AM2302N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 76 @ VGS = 4.5V 3.4 • Low thermal impedance 20 103 @ VGS = 2.5V 3.0 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

1.6. afn2302s.pdf Size:520K _upd-mosfet

2302
2302

AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100mΩ@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

1.7. shd230209.pdf Size:60K _upd-mosfet

2302
2302

SENSITRON SHD230209 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 318, REV. A HERMETIC POWER MOSFET P-CHANNEL QUAD FEATURES: œ -100 Volt, 0.60 Ohm, -3.5A MOSFET œ Fast Switching œ Low RDS (on) œ Equivalent to IRF9120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - –20 Volts ID -

1.8. stn2302.pdf Size:367K _upd-mosfet

2302
2302

STN2302 20V N-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STN2302 is the N-Channel logic enhancement  20V/4.0A, RDS(ON) =50mΩ(typ.)@VGS =4.5V mode power field effect transistor is produced using  20V/3.0A, RDS(ON) =65mΩ(typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and  Super high densi

1.9. ssm2302gn.pdf Size:142K _upd-mosfet

2302
2302

SSM2302N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline RDS(ON) 85mΩ D Surface-mount package ID 2.8A S SOT-23 G Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, D low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter Rating Uni

1.10. tp2302nr.pdf Size:296K _update_mosfet

2302
2302

 TP2302NR N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES  HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE  IMPROVED SHOOT-THROUGH FOM  BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA  WE DECLARE THAT THE MATERIAL OF PRODUCT COMPLIANCE WITH ROHS REUIREMENTS.  Pb Free: TP2302NR

1.11. cht2302wgp.pdf Size:216K _update_mosfet

2302
2302

CHENMKO ENTERPRISE CO.,LTD CHT2302WGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing dens

1.12. cht2302gp.pdf Size:272K _update_mosfet

2302
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CHENMKO ENTERPRISE CO.,LTD CHT2302GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged

1.13. mmn2302.pdf Size:147K _update_mosfet

2302
2302

MMN2302 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60mΩ RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ RDS(ON), Vgs@1.8V, Ids@2.0A = 130mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Drain Gate Source Top View N-C

1.14. tsm2302cx.pdf Size:315K _update_mosfet

2302
2302

 TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(mΩ) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No.

1.15. si2302ds.pdf Size:257K _philips2

2302
2302

SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: SI2302DS in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. A

1.16. msc82302.pdf Size:52K _st

2302
2302

MSC82302 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .VSWR CAPABILITY 20:1 @ RATED CONDITIONS .HERMETIC STRIPAC? PACKAGE .P 1.8 W MIN. WITH 10.0 dB GAIN OUT = .250 2LFL (S010) hermetically sealed ORDER CODE BRANDING MSC82302 82302 PIN CONNECTION DESCRIPTION The MSC82302 is a common base hermetically sealed silic

1.17. rn2301 rn2302 rn2303 rn2304 rn2305 rn2306.pdf Size:454K _toshiba

2302
2302

RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi

1.18. si2302cds.pdf Size:209K _vishay

2302
2302

Si2302CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) • Material categorization: 0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.5 0.075 at VGS = 2.5 V www.vishay.com/doc?99912 2.6 APPLICATIONS • Load Switching for Portable Devices • DC/DC Converter TO

1.19. si2302ds.pdf Size:64K _vishay

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2302

Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 20 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "8 TA= 25_C 2

1.20. si2302-tp.pdf Size:270K _vishay

2302
2302

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone: (818) 701-4933 Fax: (818) 701-4939 Features N-Channel • 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode • High dense cell design for extremely low RDS(ON) • Rugged and reliable Field Effect Transistor • Lead free product is acqu

1.21. si2302ads-t1 si2302ads.pdf Size:199K _vishay

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2302

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.060 at VGS = 4.5 V 2.4 • 100 % Rg Tested 20 • Compliant to RoHS Directive 2002/95/EC 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Informatio

1.22. si2302ad.pdf Size:204K _vishay

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Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC 20 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb

1.23. si2302cd.pdf Size:209K _vishay

2302
2302

Si2302CDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) (?)ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.057 at VGS = 4.5 V 2.9 20 3.5 RoHS 0.075 at VGS = 2.5 V APPLICATIONS 2.6 COMPLIANT Load Switching for Portable Devices DC/DC Converter TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302CDS (N2)* *

1.24. si2302dds.pdf Size:204K _vishay

2302
2302

Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Max. ID (A) Qg (Typ.) Definition 0.057 at VGS = 4.5 V 2.9 • TrenchFET® Power MOSFET 20 3.5 0.075 at VGS = 2.5 V • 100 % Rg Tested 2.6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching for Portable Dev

1.25. dmg2302u.pdf Size:159K _diodes

2302
2302

DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leaka

1.26. si2302.pdf Size:260K _mcc

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2302

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone: (818) 701-4933 Fax: (818) 701-4939 Features N-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor Lead free product is acquired SOT

1.27. ut2302.pdf Size:269K _utc

2302
2302

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/

1.28. smg2302n.pdf Size:711K _secos

2302
2302

SMG2302N 3.4 A, 20 V, RDS(ON) 76 m? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3 applicat

1.29. smg2302.pdf Size:315K _secos

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2302

SMG2302 ? 3.2A, 20V,RDS(ON) 85m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A Dim Min Max Description L A 2.70 3.10 3 B 1.40 1.60 S B Top View The SMG2302 provide the designer with the best 2 1 C 1.00 1.30 Combination of fast switching, low on-resistance D 0.35 0.50 and cost

1.30. tsm2302 a07.pdf Size:346K _taiwansemi

2302
2302

TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m?) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram ? Advance Trench Process Technology ? High Density Cell Design for Ultra Low On-resistance Application ? Load Switch ? PA Switch Ordering Information Part No. Package Pac

1.31. si2302.pdf Size:4060K _htsemi

2302
2302

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S Millimeter Millimeter REF. REF. SOT-23 Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60

1.32. ces2302.pdf Size:405K _cet

2302
2302

CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72m? @VGS = 4.5V. RDS(ON) = 110m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage

1.33. gm2302.pdf Size:292K _gsme

2302
2302

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2302 SOT-23 ??????(SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N

1.34. gms2302.pdf Size:295K _gsme

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2302

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMS2302 SOT-23 ??????(SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N MOS N MOS N?????MOS???? MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM

1.35. wtc2302.pdf Size:723K _wietron

2302
2302

WTC2302 N-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET 2.3 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) 1 RDS(ON) <60m ?@VGS =4.5V 2 *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25? Unless Otherwise Specified) Rating Symbol Val

1.36. se2302.pdf Size:429K _willas

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2302

FM120-M WILLAS SE2302THRU SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize b

1.37. h2302n.pdf Size:88K _hsmc

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2302

Spec. No. : MOS200613 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.12 MICROELECTRONICS CORP. Page No. : 1/4 H2302N Pin Assignment & Symbol H2302N 3 3-Lead Plastic SOT-23 N-Channel Enhancement-Mode MOSFET (20V, 2.4A) Package Code: N Pin 1: Gate 2: Source 3: Drain 2 1 Drain Features Gate Source • RDS(on)<60m?@VGS=4.5V, ID=2.8A • RDS(on)<115m?@VGS=-

1.38. ap2302gn-hf.pdf Size:96K _a-power

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2302

AP2302GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 2.5V gate drive BVDSS 20V Ў Small package outline D RDS(ON) 85m? Ў Surface mount package ID 3.2A Ў RoHS Compliant S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistance and co

1.39. ap2302gn.pdf Size:95K _a-power

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2302

AP2302GN RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V gate drive BVDSS 20V ▼ Small package outline D RDS(ON) 85mΩ ▼ Surface mount package ID 3.2A S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistance and cost-effectiven

1.40. ap2302n-hf.pdf Size:91K _a-power

2302
2302

AP2302N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS 20V D ▼ Lower Gate Charge RDS(ON) 64mΩ ▼ Surface Mount Package ID 3.2A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resista

1.41. ap2302agn.pdf Size:176K _a-power

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2302

AP2302AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS 20V D ▼ Lower Gate Charge RDS(ON) 42mΩ ▼ Surface Mount Package ID 4.6A S ▼ RoHS Compliant & Halogen-Free SOT-23 G D Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the l

1.42. ap2302agn-hf.pdf Size:94K _a-power

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2302

AP2302AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 2.5V gate drive BVDSS 20V D Ў Lower Gate Charge RDS(ON) 42m? Ў Surface mount package ID 4.6A S Ў RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ex

1.43. mtn2302v3.pdf Size:386K _cystek

2302
2302

Spec. No. : C323V3 Issued Date : 2009.01.19 CYStech Electronics Corp. Revised Date : 2010.06.18 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features • V =20V DS Ω R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS Ω R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS • Simple drive requirement • Small package outline • Capable of 2.5V gate drive

1.44. mtn2302n3.pdf Size:275K _cystek

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2302

Spec. No. : C323N3 Issued Date : 2004.04.05 CYStech Electronics Corp. Revised Date :2012.06.26 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN2302N3 ID 3.6A 29mΩ(typ.) RDSON(MAX)@VGS=4.5V, ID=3.6A 39mΩ(typ.) RDSON(MAX)@VGS=2.5V, ID=3.1A Features • Simple drive requirement • Small package outline • Capable of 2.5V gate drive • Pb-free le

1.45. 2302.pdf Size:1437K _goford

2302
2302

GOFORD 2302 DESCRIPTION D The 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S GENERAL FEATURES Schematic diagram ● VDSS RDS(ON) RDS(ON) ID D 3 @4.5V (Typ) @2.5V (Typ) 2302 20V 30 mΩ 37m

1.46. sts2302a.pdf Size:103K _samhop

2302
2302

Green Product STS2302A a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 44 @ VGS= 4.5V Suface Mount Package. 20V 4A 65 @ VGS= 2.5V D S OT23-3L D G S G S (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS

1.47. ssf2302.pdf Size:387K _silikron

2302
2302

SSF2302 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 2.4A D 3 RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=

1.48. cs2302 sot-23.pdf Size:213K _can-sheng

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2302

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ±10 V ID Drain current 2.9

1.49. mmftn2302.pdf Size:377K _semtech

2302
2302

MMFTN2302 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25℃ unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 20 V Drain-Gate Voltage VGS ± 8 V Drain Current - Continuous ID 2.4 A

1.50. sm2302nsa.pdf Size:257K _sino

2302
2302

SM2302NSA ® N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, D RDS(ON)= 26m (max.) @ VGS=4.5V S RDS(ON)= 37m (max.) @ VGS=2.5V G ESD Protected Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. N-Chan

1.51. dmg2302u.pdf Size:125K _tysemi

2302
2302

 Product specification DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020D • Low Input/Output Leakage • Terminal

1.52. ftk2302.pdf Size:247K _first_silicon

2302
2302

SEMICONDUCTOR FTK2302 TECHNICAL DATA 20V N-Channel Enhancement-Mode MOSFET D DESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● VDS = 20V,I

1.53. si2302ds.pdf Size:1142K _kexin

2302
2302

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 ■ Features 3 ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Dr

1.54. si2302ds-3.pdf Size:1471K _kexin

2302
2302

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Un

1.55. si2302 a2shb.pdf Size:1928K _shenzhen-tuofeng-semi

2302
2302

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302 N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.0 20 20 0.090 @ V 2.0 GS = 2.5 V (SOT-23-3L) (SOT-23) G 1 3 D S 2 Top View SI2302 (A2sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Sou

1.56. si2302a.pdf Size:2025K _shenzhen-tuofeng-semi

2302
2302

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302A N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 3.0 20 20 0.060 @ V 2.0 GS = 2.5 V (SOT-23) G 1 3 D S 2 Top View (A2)* SI2302A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VG

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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