GOFORD2302DESCRIPTION DThe 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) IDD3 @4.5V (Typ) @2.5V (Typ)230220V 30 m 37m

SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:SI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

MSC82302RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 1.8 W MIN. WITH 10.0 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82302 82302PIN CONNECTIONDESCRIPTIONThe MSC82302 is a common base hermeticallysealed

RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi

Si2302CDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Material categorization:0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.50.075 at VGS = 2.5 V www.vishay.com/doc?999122.6APPLICATIONS Load Switching for Portable Devices DC/DC ConverterTO

Si2302DDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.057 at VGS = 4.5 V 2.9 TrenchFET Power MOSFET20 3.50.075 at VGS = 2.5 V 100 % Rg Tested2.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switching for Portable Dev

Si2302DSVishay SiliconixN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.085 @ VGS = 4.5 V 2.820200.115 @ VGS = 2.5 V 2.4TO-236(SOT-23)G 13 DS 2Top ViewSi2302DS (A2)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VGS "8TA= 25_

Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC200.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Information: Si2302ADS-T1-E3 (

Si2302CDSVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.057 at VGS = 4.5 V 2.920 3.5RoHS0.075 at VGS = 2.5 V APPLICATIONS2.6COMPLIANT Load Switching for Portable Devices DC/DC ConverterTO-236(SOT-23)G 13 DS 2Top ViewSi2302

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SI2302Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5VRDS(ON)=82m @VGS=2.5VEnhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliableField Effect Transistor Lead free product is acqu

Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 100 % Rg Tested20 Compliant to RoHS Directive 2002/95/EC0.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Informatio

DMG2302UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 90m @ VGS = 4.5V 4.2A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.7A Halogen and Antimony Free. Green Device

DMG2302UK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 90m @ VGS = 4.5V 2.8A ESD Protected Gate 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.4A Halogen and Antimony Free. Gre

DMG2302UN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D L

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SI2302Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5VRDS(ON)=82m @VGS=2.5VEnhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliableField Effect Transistor Lead free product is acqu

SI2302AFeatures Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low RDS(ON) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request by Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Field Effect Transistor

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications andsuited for low voltage applications such as

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applicationsand suited for low voltage applications such a

SMG23023.2A, 20V,RDS(ON) 85m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSC-59ADim Min MaxDescription LA 2.70 3.103B 1.40 1.60SBTop ViewThe SMG2302 provide the designer with the best 2 1C 1.00 1.30Combination of fast switching, low on-resistance D 0.35 0.50and

SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33app

TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING: S2 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302S N-Channel 20-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 60m@4.5V20V2.1A1. GATE 115m@2.5V2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25

SI230220V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSMillimeter MillimeterREF. REF. SOT-23Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30C 1.4

CES2302N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 3.0A, RDS(ON) = 72m @VGS = 4.5V. RDS(ON) = 110m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source V

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2302SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FET

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMS2302SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN MOSN MOSNMOS

G2302 N-Channel 20-V(D-S) Mosfet1. GATE SOT-232. SOURCE 3. DRAIN FeaturesTrenchFET Power MOSFET Applications Load Switch for Portable Devices DC/DC Converter Dimensions in inches and (millimeters)MARKING: 2302Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 8 Continuous Dra

WTC2302N-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET2.3 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE20 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1 RDS(ON)

FM120-M WILLASSE2302THRU SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz

Spec. No. : MOS200613 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.12 MICROELECTRONICS CORP. Page No. : 1/4 H2302N Pin Assignment & Symbol H2302N 33-Lead Plastic SOT-23 N-Channel Enhancement-Mode MOSFET (20V, 2.4A) Package Code: N Pin 1: Gate 2: Source 3: Drain 21DrainFeatures GateSource RDS(on)

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)

AP2302GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS CompliantSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistanc

AP2302N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 64m Surface Mount Package ID 3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resista

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2302A series are from Advanced Power innovated design andsilicon process technology to achieve the l

AP2302GNRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2ASSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiven

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface mount package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

Analog Power AM2302NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.420power management in portable and 0.103 @ VGS = 2.5V 2

Analog Power AM2302NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)76 @ VGS = 4.5V3.4 Low thermal impedance 20103 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302AN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.040 @ VGS = 4.5 V 3.020200.060 @ V 2.0GS = 2.5 V(SOT-23)G 13 DS 2Top View(A2)*SI2302AABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VG

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302N-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 4.5 V 3.020200.090 @ V 2.0GS = 2.5 V(SOT-23-3L)(SOT-23)G 13 DS 2Top ViewSI2302 (A2sHB)*ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Sou

Spec. No. : C323N3 Issued Date : 2004.04.05 CYStech Electronics Corp.Revised Date :2012.06.26 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2302N3 ID 3.6A29m(typ.)RDSON(MAX)@VGS=4.5V, ID=3.6A 39m(typ.)RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free le

Spec. No. : C323V3 Issued Date : 2009.01.19 CYStech Electronics Corp.Revised Date : 2010.06.18 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features V =20V DS R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS Simple drive requirement Small package outline Capable of 2.5V gate drive

GreenProductSTS2302AaS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.44 @ VGS= 4.5VSuface Mount Package.20V 4A65 @ VGS= 2.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

SSF2302DDESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A D3RDS(ON)

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9

BRCS2302MA Rev.J May.-2020 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. HF product. / Applications

BRCS2302AMA Rev.C Apr.-2020 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. Halogen-free Product. / Applicati

SI2302 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. / Applications

MMFTN2302 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 20 VDrain-Gate Voltage VGS 8 VDrain Current - Continuous ID 2.4 A

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET FEATURES RDS(ON)85m@VGS=4.5V LN2302BLT1G RDS(ON)115m@VGS=2.5V S-LN2302BLT1G RDS(ON)135m@VGS=1.8V 3 Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 12 S- Prefix for Automotive and Other Applications Re

SM2302NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,DRDS(ON)= 26m (max.) @ VGS=4.5VSRDS(ON)= 37m (max.) @ VGS=2.5VG ESD Protected Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.N-Chan

SMD TypeSMD Type ICProduct specificationKI2302DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 0.085@VGS=4.5V ,ID=3.6A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(on)= 0.115@VGS=2.5V ,ID= 3.1A+0.11.9-0.1G 13 D1.Base1. GateS 2 2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter

Product specificationDMG2302UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leakage Terminal

SEMICONDUCTORFTK2302TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET DDESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,I

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302 (KI2302)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1 Features3 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

SMD Type DiodesSMD Type MOSFETSMD Type MOSFETN-Channel MOSFETKI2302DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 0.085@VGS=4.5V ,ID=3.6A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(on)= 0.115@VGS=2.5V ,ID= 3.1A+0.11.9-0.1G 13 D1.Base1. GateS 2 2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D

CHENMKO ENTERPRISE CO.,LTDCHT2302WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing dens

CHENMKO ENTERPRISE CO.,LTDCHT2302GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged

CTN2302Crownpo TechnologyCTN2302 N-Channel Enhancement Mode MOSFET FeaturesDescription 20V/2.8A,RDS(ON)=85m @VGS=4.5V The CTN2302 is the N-Channel logic enhancement 20V/2.4A,R =115 m @VGS=2.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

Product specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Electrostatic Sensitive Devices. MSL 1. APPLICATIONS Powe

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-

GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTORKIA2302SEMICONDUCTORS1.DescriptionThe KIA2302 is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.Because high-speed switching is possible,the IC can be efficiently set therebysaving energy. In order to counter static, a gate protect diode is built-in. The small SOT23 package ma

ME2302(Pb-free) N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON)85m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON)115m@VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON)135m@VGS=1.8V resistance.

ME2302/ME2302-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON)85m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON)115m@VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON)130m@VGS=1.8V resistance.T

MMN2302Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@2.8A = 60mRDS(ON), Vgs@2.5V, Ids@2.0A = 115mRDS(ON), Vgs@1.8V, Ids@2.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-C

Pb Free Producthttp://www.ncepower.com NCE2302NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

Pb Free Producthttp://www.ncepower.com NCE2302CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram VD

Pb Free Producthttp://www.ncepower.com NCE2302BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VD

STN2302 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m(typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi

SENSITRON SHD230209SEMICONDUCTORTECHNICAL DATADATA SHEET 318, REV. AHERMETIC POWER MOSFETP-CHANNEL QUADFEATURES: -100 Volt, 0.60 Ohm, -3.5A MOSFET Fast Switching Low RDS (on) Equivalent to IRF9120 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID -

SENSITRON SHD230202SEMICONDUCTORTECHNICAL DATADATA SHEET 319, REV. AHERMETIC POWER MOSFETN-CHANNEL QUADFEATURES: 100 Volt, 0.35 Ohm, 6.2A MOSFET Fast Switching Low RDS (on) Equivalent to IRF120 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 6

SSM2302NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSmall package outline RDS(ON) 85mDSurface-mount package ID 2.8ASSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiveness.GSAbsolute Maximum RatingsSymbol Parameter Rating Uni

SL2302M20V N-Channel MOSFETCircuit diagramProduct SummaryV R I(BR)DSS DS(on)MAX D110m@4.5V20V 150m@2.5V 1.2AFeaturePackage Surface Mount Package N-Channel Switch with Low R (on)DS Operated at Low Logic Level Gate Drive ESD ProtectedApplication SOT-723 Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portab

SL2302SSOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com3

SL2302N-Channel Power MOSFET General Features VDS = 20V,ID = 2.8 A RDS(ON)

ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

TP2302NR N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA WE DECLARE THAT THE MATERIAL OF PRODUCT COMPLIANCE WITH ROHS REUIREMENTS. Pb Free: TP2302NR

RUMW UMW SI2302AUMW SI2302AUMW SI2302AN-Channel Enhancement MOSFET FeaturesSOT23 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A Marking1. GATE 2. SOURCE G 1 3. DRAIN 3 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20V Gate-Source Voltage VGS 8 Ta=25 2.

RUMW UMW SI2302BUMW SI2302BUMW SI2302BSOT-23 Plastic-Encapsulate MOSFETSN-Channel 20-V(D-S) MOSFET UMW SI2302B SOT23 IDV(BR)DSS RDS(on)MAX 80m@4.5V20V2.5A100m@2.5V1. GATE 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit A2SHBMaximum rating

ATM2302BNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3AFeatures Trench Power LV MOSFET technology High power and current handing capabilityR

AS2302 N-Channel 20V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: A2 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBVDSS 20 V-

SI2302SMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23 -Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch for DC/DC Converter 48m @ 4.5V Switching Circuits 20V 3 A 55m @ 3.3V LED Driver Order Information Mar

SI2302MOSFET ROHSN-Channel Enhancement-Mode MOSFETSOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol LimitUnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 10Continuous

nvertCTZ2302ASuzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load switch Battery protection Power managementDevice Marking and Package InformationDevice Package Markin

FS2302AN-Channel SMD MOSFETProduct Summary V R I(BR)DSS DS(on)MAX D75m@4.5V20V 2.6A105m@2.5VFeature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagramDSGSOT-23MarkingA2SHBwww.fuxinsemi.com Page 1 Ver2.1FS2302AN-Channel SMD MOSFE

GP2302 20V N-Channel MOSFET Product Summary SOT-23 V R I (BR)DSS DS(on)MAX D45m@4.5V 20V 2.1A 60m@2.5V Feature TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Schematic diagram Application DC/DC Converter Load Switch for Portable Devices Battery Switch MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) P

Plastic-Encapsulate MosfetsFEATURESSI2302High dense cell design for extremely low RDS(ON)N-Channel MOSFETRugged and reliableCase Material: Molded Plastic.Absolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Ratings UnitDrain-Source Voltage VDS 20 VGate-source Voltage VGS 8 V1.Gate2.SourceDrain Current (Continuous) ID 2.1 A SOT-233.DrainaDrai

HSS2302B N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302B is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 46 m power switching and load switch applications. ID 3 A The HSS2302B meets the RoHS and Green Product requirement with full function reliability ap

HSS2302A N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302A is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 30 m power switching and load switch applications. ID 3.6 A The HSS2302A meets the RoHS and Green Product requirement with full function reliability

SOT-23 Plastic-Encapsulate TransistorsHX2302A MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETMARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 12 VID Drain current 2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL C

SOT-23-3 Plastic-Encapsulate Transistors HX2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 8 VID Drain current 3.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 EL

HD2302SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID SOT- 23V(BR)DSS RDS(on)MAX 60m@4.5VD20V2.1A115m@2.5VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications Extreme fast switchesMarking: S2 Symbol Value Parameter Unit Drain-Source Voltage VDS 20 V Gate-S

JMTL2302A Description JMT N-channel MOSFET Features Application V =20V, I =4A Battery Protection DS D R

JST2302H20V,3AN-Channel MosfetFEATURESSOT-23RDS(ON) 46m @VGS=4.5VRDS(ON) 70m @VGS=2.5VAPPLICATIONSLoad Switch for Portable DevicesDC/DC ConverterMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20VGate-Source Voltage V 10GSI 3DContinuous Drain CurrentAPulsed Drain

JSM2302/Features 1 2 /Applications DC-DC /Absolute maximum ratings(Ta=25) /Parameter / Symbol /Value /Unit -/Drain-Source Voltage V 20 V DS-/Gate-Source Voltage V 12 V GS/C

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM2302 is N-channel logic enhancement mode 20V/3.5A, RDS(ON)=50m(Typ.)@VGS=4.5V power field effect transistor, which are produced by 20V/3.0A, R =75m(Typ.)@V =2.5V DS(ON) GSusing high cell density, DMOS trench technology. Sup

LNSC2302 Lonten N-channel 20V, 4A, 42m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 20V effect transistors are using trench DMOS RDS(on).max@ VGS=4.5V 42m technology. This advanced technology has been ID 4A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy puls

SI2302SSOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Enhancement Mode MOSFETSOT-23 VDS= 20V 3RDS(ON), Vgs@ 4.5V, Ids@ 2.3A4 8m RDS(ON), Vgs@ 3.3V, Ids@ 2.3A 5 5m 1. GATE 2. SOURCE 13. DRAIN2FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceEquivalent circuitMARKING D A2sHBG S PACKAGE SPE

SI2302SOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Enhancement Mode MOSFETSOT-23 ID MaxV(BR)DSS RDS(on)Typ 328m @ 4.5V 3.0A 20V 1. GATE 32m @ 3.3V 2. SOURCE 13. DRAIN2FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceEquivalent circuitMARKING D A2sHBG S PACKAGE SPECIFICATIONSReel DIA. Q'TY/Ree

www.msksemi.comSI2302AI-MSSemiconductor CompianceGeneral Features V = 20V,I = 3 ADS DR

MEM2302 N-Channel MOSFET MEM2302X General Description Features MEM2302XG Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra

MEM2302XG-N N-Channel MOSFET MEM2302XG-N General Description Features MEM2302XG-N Series N-channel enhancement 20V/3A mode field-effect transistor These miniature surface RDS(ON), Vgs@2.5V, Ids@2.8A = 42m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@4.5V, Ids@3A =35m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra L

MEM2302N-Channel MOSFET MEM2302M3General Description FeaturesMEM2302M3G Series N-channel enhancement mode 20V/3Afield-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3ADMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2Aminimize on-state resistance. This device particularly High Density Cell Design For Ultra Low

SOT-23 Plastic-Encapsulate MOSFETSSI2302SI2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter*

SOT-23 Plastic-Encapsulate MOSFETSSI2302AN-Channel 20-V(D-S) MOSFETSI2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter*

KS2302AASingle N-Channel Advanced Power MOSFETFeatures Pin Description 20V/3A, RDS (ON) =43m(Typ.)@VGS=4.5VD RDS (ON) =55m(Typ.)@VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedGSSOT23DApplications Load SwitchGSSingle N-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (TA=25C U

PJM2302NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: M22 Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unless

PJM2302NSA-SN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: 22S Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unle

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.2302PS&CIC1975 N-Channel Trench Power MOSFETDescriptionGeneral DescriptionProduct Summary Trench Power LV MOSFET tech

SI2302 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 4A 45mRDS(ON), Vgs@ 2.5V, Ids@ 3.5A 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DSOT-23GSMillimeterMillimeterREF. REF.Min.Max. Min. Max.A 2.80 3.00 G 1.80 2.00B 2.30 2.50 H 0.90 1.1C 1.20 1.4

SK2302AASOT-23 Plastic-Encapsulate Transistors FEATURES Trench FET Power MOSFET MARKING: A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTER

SK2302AATSOT-523 Plastic-Encapsulate MOSFETSFEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter SOT523 MARKING: 2302 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (T a =25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current ID 2.1

WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR

SI2302N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.050@ 4.5V320V 3A1.GATE0.065@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2ShbAPPLICATIONLoad Switch for Portable DevicesDC/DC ConverterMaximum ratings (Ta=25 unless otherwise not

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302AN-Channel 20-V(D-S) MOSFETTF2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302TF2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad

SI2305SI2301SI2302SI2302SI2302SI2302SI2302 SI2301 Equivalent CircuitMARKING3400RA2SHB34001.GATE2.SOURCE3.DRAIN

WST2302N-Ch MOSFETGeneral Description Product SummeryThe WST2302 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 70m 3.0Afor most of the small power switching and load switch applications.Applications The WST2302 meet the RoHS and Green Product requirement with full functio

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302 2.4A,20V N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302U 2.4A,20V N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)

SM2302N-Channel Enhancement-Mode MOSFET(20V, 2.8A)Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = 4.5V, ID=2.8A 20V 2.8A 115 @ VGS = 2.5V, ID=2.0A 130 @ VGS = 1.8V, ID=2.0A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Fully Characterized Avalanche Voltage and Current. 4 Improved Shoot

SPN2302S23Rwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

CES2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

ST2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co

SI2302DS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

SI2302ADS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

UT2302G-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

MEM2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver

UT2302L-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

ST2302MSRGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

AM2302Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver

SI2302CDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

RoHS COMPLIANT YJL2302B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 52 mohm DS(ON) GS R ( at V =2.5V) 80 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma

RoHS COMPLIANT YJL2302A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.3A D R ( at V =4.5V) 27 mohm DS(ON) GS R ( at V =2.5V) 37 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M

TTX2302A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 3.7A Low Gate Charge RDS(ON) (at VGS =10V)

TTX2302Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company20V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking a

HM2302N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage

HM2302KRN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

HM2302FN-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.8A RDS(ON)

GENERAL DESCRIPTION FEATURES The HM2302DR is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistan

HM2302AN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)

JHM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m@ 4.5V20V 450m@2.5V0.75A 800m@1.8V1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage

HM2302BN-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)

HM2302EN-Channel Trench Power MOSFETGeneral DescriptionThe HM2302E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Schematic DiagramFeatures VDS = 15V,ID =2.0AR

GENERAL DESCRIPTION FEATURES The HM2302D is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistance

HNM2302N-Channel MOSFETs3.5A, 20V N N MOS HNM2302N-Channel Enhancement Mode Field Effect TransistorN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.5A, RDS(ON)=60m @VGS=4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable

HAOHAI ELECTRONICS H2302 2A 20V N-Channel MOSFET APPLICATIONS Load switch for portable FeaturesDC/DC converterRDS(ON)60m @ VGS=4.5V FEATURERDS(ON)100m @ VGS=2.5VHigh Density Cell Design For UltraIndustry-standard pinout SOT-23 PackageLow On-ResistanceCompatible with Existing Surface MountTechniques

HAOHAI ELECTRONICS H2302A 4A, 20V, N-Channel MOSFETApplicationLoad Switch FeaturesPWM ApplicationRDS(ON)

HNM2302ALBN-Channel MOSFETs3.7A, 20V N N HNM2302ALBN-Channel Enhancement Mode Field Effect Transistor SMDN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.7A, RDS(ON)=50m @ VGS=4.5VHigh dense cell design for extremely low RDS(ON)

PM2302 20V N-Channel MOSFET Description Applications The PM2302 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. Outline Drawing Features Trench Power MOSFET