GD1 Datasheet and Replacement

GOFORDGD1DESCRIPTION DThe GD1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-20V88m 110m -2.6 A GD1 High P

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGD10NC60HN-channel 10A - 600V - DPAKVery fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGD10NC60H 600V

STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGD10HF60KDAutomotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diodeDatasheet - production dataFeatures Designed for automotive applications and AEC-Q101 qualifiedTAB Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 1susceptibility) Switching losses include diode recovery energyDPAK Short-circuit rated

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V

STGD19N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production dataFeatures Designed for automotive applications and AEC-Q101 qualifiedTAB 180 mJ of avalanche energy @ TC = 150 C, L = 3 mH3 ESD gate-emitter protection1 Gate-collector high voltage clamping Logic level gate driveDPAK Low saturation voltage Hig

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

PMGD130UN20 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast

PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

NGD15N41CL,NGD15N41ACL,NGB15N41CL,NGB15N41ACL,NGP15N41CL,NGP15N41ACLhttp://onsemi.comIgnition IGBT 15 A, 410 V15 AMPSN-Channel DPAK, D2PAK and TO-220410 VOLTSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresVCE(on) 3 2.1 V @monolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

NTGD1100LPower MOSFET8 V, 3.3 A, Load Switch with Level-Shift,P-Channel, TSOP-6The NTGD1100L integrates a P and N-Channel MOSFET in asingle package. This device is particularly suited for portableelectronic equipment where low control signals, low battery voltageshttp://onsemi.comand high load currents are needed. The P-Channel device isspecifically designed as a load switch

NGD15N41CL,NGB15N41CL,NGP15N41CLPreferred Device Ignition IGBT15 Amps, 410 Voltshttp://onsemi.comN-Channel DPAK, D2PAK and TO-22015 AMPSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped410 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.1 V @include I

BSM 35 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 120

BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

BSM 50 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-

BSM 75 GD 120 DN2IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k

Technische Information / Technical InformationIGBT-ModuleBSM75GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 125 APeriodischer Kollektor Spitzenstrom

BSM 15 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

Technische Information / Technical InformationIGBT-ModuleBSM35GD120DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 35 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 70 APeriodischer Kollektor Spitzens

BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

Technische Information / Technical InformationIGBT-ModuleBSM50GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 85 APeriodischer Kollektor Spitzenstrom

BSM 50 GD 120 DN2GIGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate

European Power-Semiconductor andElectronics CompanyMarketing InformationBSM 50 GD 170 DL118.1194.5119121.599.94 x 19.05 = 76.219.05 3.8119 1817 16 151 2 3 4 5 6 7 8 9 10 11 123.81 1.15x1.015.245 x 15.24 =76.2110connections to be made externally21131 592 6 101917153 11748 12201401.07.1998BSM 50 GD 170 DL vorlufige DatenH

-40...+1252006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-01BSM 50 GD 120 DN2 E3226Gehusemae / SchaltbildPackage outline / Circuit diagramm9 2006-02-01Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fr technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit

BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

Pb Free ProductNCE25GD135T http://www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Tre

SEMiX353GD126HDcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 364 ATj = 150 CTc =80C 256 AICnom 225 AICRM ICRM = 2xICnom 450 AVGES -20 ... 20 VVCC = 600 VSEMiX 33ctpsc VGE 20 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 329 ATj = 150 CSEMiX353GD126HDcTc

SKiM429GD17E4HDAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1700 VIC Ts =25C 595 ATj = 175 CTs =70C 479 AICnom 420 AICRM ICRM = 3xICnom 1260 AVGES -20 ... 20 VVCC = 1200 VSKiM 93tpsc VGE 15 V Tj =150C 10 sVCES 1700 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Ts =25C 413 ATj = 150 CSKiM429GD17E4HDTs =70

SEMiX71GD12E4sAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 115 ATj = 175 CTc =80C 88 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 800 VSEMiX 13tpsc VGE 20 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Tc =25C 97 ATj = 175 CSEMiX71GD12E4sTc =80C

SEMiX653GD176HDcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1700 VIC Tc =25C 619 ATj = 150 CTc =80C 438 AICnom 450 AICRM ICRM = 2xICnom 900 AVGES -20 ... 20 VVCC = 1000 VSEMiX 33ctpsc VGE 20 V Tj = 125 C 10 sVCES 1700 VTj -55 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 545 ATj = 150 CSEMiX653GD176HDcT

SEMiX151GD12E4sAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMiX 13tpsc VGE 20 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSEMiX151GD12E4sTc =8

SKiM400GD126DLM 07026-Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Ts =25C ATj = 150 CTs =70C AICnom 300 AICRM ICRM = 2xICnom 600 AVGES -20 ... 20 VVCC = 600 VVGE = tpsc (XXXXXfailXXXXX Tj = 125 C 10 s) VTrench IGBT ModulesVCES 1200 VTj -40 ... 150 CInverse diodeSKiM400GD126DLM 07026-IF Ts =25C 258 ATj = 150

SEMiX453GD12E4cAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 683 ATj = 175 CTc =80C 526 AICnom 450 AICRM ICRM = 3xICnom 1350 AVGES -20 ... 20 VVCC = 800 VSEMiX 33ctpsc VGE 20 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Tc =25C 544 ATj = 175 CSEMiX453GD12E4cTc

SKiM459GD12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Ts =25C 554 ATj = 175 CTs =70C 450 AICnom 450 AICRM ICRM = 3xICnom 1350 AVGES -20 ... 20 VVCC = 800 VSKiM 93tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Ts =25C 438 ATj = 175 CSKiM459GD12E4Ts =70C 3

SEMiX353GD176HDcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1700 VIC Tc =25C 353 ATj = 150 CTc =80C 251 AICnom 225 AICRM ICRM = 2xICnom 450 AVGES -20 ... 20 VVCC = 1000 VSEMiX 33ctpsc VGE 20 V Tj = 125 C 10 sVCES 1700 VTj -55 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 428 ATj = 150 CSEMiX353GD176HDcT

SEMiX703GD126HDcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 642 ATj = 150 CTc =80C 449 AICnom 450 AICRM ICRM = 2xICnom 900 AVGES -20 ... 20 VVCC = 600 VSEMiX 33ctpsc VGE 20 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 561 ATj = 150 CSEMiX703GD126HDcTc

SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 75 GD 124 DIC Tcase = 25/60 C 90 / 75 AICM Tcase = 25/60 C; tp = 1 ms 180 / 150 AVGES 20 VPtot per IGBT, Tcase = 25 C 390 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class Fclimate DIN IEC 68 T

SEMiX303GD12E4cAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 466 ATj = 175 CTc =80C 359 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMiX 33ctpsc VGE 20 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Tc =25C 338 ATj = 175 CSEMiX303GD12E4cTc =

SEMiX151GD126HDsAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 168 ATj = 150 CTc =80C 119 AICnom 100 AICRM ICRM = 2xICnom 200 AVGES -20 ... 20 VVCC = 600 VSEMiX 13tpsc VGE 20 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 152 ATj = 150 CSEMiX151GD126HDsTc

SEMiX251GD126HDsAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 242 ATj = 150 CTc =80C 170 AICnom 150 AICRM ICRM = 2xICnom 300 AVGES -20 ... 20 VVCC = 600 VSEMiX 13tpsc VGE 20 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 207 ATj = 150 CSEMiX251GD126HDsTc

SEMiX151GD12VsAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 600 VSEMiX 13tpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSEMiX151GD12VsTc =80C 141 AIFnom 150 A

SEMiX453GD12VcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 673 ATj = 175 CTc =80C 513 AICnom 450 AICRM ICRM = 3xICnom 1350 AVGES -20 ... 20 VVCC = 600 VSEMiX 33ctpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 516 ATj = 175 CSEMiX453GD12VcTc =80C 385 AIFnom 450 A

SEMiX453GD176HDcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1700 VIC Tc =25C 444 ATj = 150 CTc =80C 315 AICnom 300 AICRM ICRM = 2xICnom 600 AVGES -20 ... 20 VVCC = 1000 VSEMiX 33ctpsc VGE 20 V Tj = 125 C 10 sVCES 1700 VTj -55 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 545 ATj = 150 CSEMiX453GD176HDcT

SEMiX101GD12VsAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 600 VSEMiX 13tpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSEMiX101GD12VsTc =80C 91 AIFnom 100 AI

SEMiX223GD12E4cAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 333 ATj = 175 CTc =80C 256 AICnom 225 AICRM ICRM = 3xICnom 675 AVGES -20 ... 20 VVCC = 800 VSEMiX 33ctpsc VGE 20 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Tc =25C 270 ATj = 175 CSEMiX223GD12E4cTc =

SEMiX101GD126HDsAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 129 ATj = 150 CTc =80C 91 AICnom 75 AICRM ICRM = 2xICnom 150 AVGES -20 ... 20 VVCC = 600 VSEMiX 13tpsc VGE 20 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 117 ATj = 150 CSEMiX101GD126HDsTc =8

SEMiX503GD126HDcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 466 ATj = 150 CTc =80C 327 AICnom 300 AICRM ICRM = 2xICnom 600 AVGES -20 ... 20 VVCC = 600 VSEMiX 33ctpsc VGE 20 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 150 CTrench IGBT ModulesInverse diodeIF Tc =25C 412 ATj = 150 CSEMiX503GD126HDcTc

SEMiX223GD12VcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 323 ATj = 175 CTc =80C 246 AICnom 225 AICRM ICRM = 3xICnom 675 AVGES -20 ... 20 VVCC = 600 VSEMiX 33ctpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 263 ATj = 175 CSEMiX223GD12VcTc =80C 197 AIFnom 225 A

SEMiX101GD12E4sAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 160 ATj = 175 CTc =80C 123 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMiX 13tpsc VGE 20 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Tc =25C 121 ATj = 175 CSEMiX101GD12E4sTc =8

SEMiX303GD12VcAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 448 ATj = 175 CTc =80C 342 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 600 VSEMiX 33ctpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 327 ATj = 175 CSEMiX303GD12VcTc =80C 244 AIFnom 300 A

SKiM306GD12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Ts =25C 410 ATj = 175 CTs =70C 333 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSKiM 63tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CTrench IGBT ModulesInverse diodeIF Ts =25C 302 ATj = 175 CSKiM306GD12E4Ts =70C 24

LSGC10R080W3/LSGD10R080W3/LSGE10R080W3Lonten N-channel 100V, 80A, 8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching perform

HGD120N06SL , HGI120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness47 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication

HGD170N10A , P-1HGI170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching16.2RDS(on),typ mW Enhanced Body diode dv/dt capability39 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir

HGD1K2N20ML , HGI1K2N20ML P-1200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching, Logic Level95RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability106RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchi

HGI130N12SL HGD130N12SL, P-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 9.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous

HGD110N08AL , HGI110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness50 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

HGD100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness102 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification in

HGD170N10AL , P-1HGI170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness38.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i

HGD110N10SL , HGI110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness73 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

HGD195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16.0RDS(on),typ mW Enhanced Body diode dv/dt capability56 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainTO-252 Hard Switching and High Speed Circuit

HGD110N08A , HGI110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness51 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

HGD190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H

P-1HGD155N15S150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability13RDS(on),typ mW Enhanced Avalanche Ruggedness61 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrain

,HGI120N10AL HGD120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness60 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectific

P-1HGD195N15SL150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness51 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai

HGD100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-252 8.6RDS(on),typ m Enhanced Body diode dv/dt capability102 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed C

,HGI120N10A HGD120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.0RDS(on),typ mW Enhanced Body diode dv/dt capability59 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in

GD100HFX65C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD100HFX65C1S 650V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6s short circuit capability