100N03 MOSFET. Datasheet pdf. Equivalent

100N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

100N03 Datasheet (PDF)

1.1. sqd100n03-3m2l.pdf Size:152K _update

SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY • 100 % Rg and UIS Tested VDS (V) 30 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 10 V 0.0032 • Material categorization: RDS(on) () at VGS = 4.5 V 0.0039 For definitions of compliance please see ID (A) 100 www.vishay.com/doc?

1.2. sqd100n03-3m4.pdf Size:153K _update

SQD100N03-3m4 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 30 • 100 % Rg and UIS Tested RDS(on) () at VGS = 10 V 0.0034 • AEC-Q101 Qualifiedd ID (A) 100 • Material categorization: Configuration Single For definitions of compliance please see www.vishay.com/doc?99912 TO-2

 1.3. spb100n03s2.pdf Size:676K _update

SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature VDS 30 V • N-Channel RDS(on) max. SMD version 3 mΩ • Enhancement mode ID 100 A • Excellent Gate Charge x RDS(on) product (FOM) P-TO263 -3 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/d t rated; Halogen Free according to IEC61249-2-21 Marking Type Package

1.4. std100n03lt4.pdf Size:457K _upd

STD100N03L STD100N03L-1 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type Pw STD100N03L 30 V <0.0055 Ω 80 A(1) 110 W 3 3 STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W 2 1 1 1. Current limited by package DPAK IPAK ■ 100% avalanche tested ■ Logic level threshold Description Internal schematic diagram Thi

 1.5. cs100n03b4.pdf Size:846K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS100N03 B4 General Description： VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.6. phb100n03lt-01.pdf Size:331K _philips2

PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 � 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS�1 technology. Product availability: PHB100N03LT in SOT404 (D2-PAK). 2. Features TrenchMOS� technology Low on-state resistance Avalanche ruggedness rated Logic l

1.7. rxh100n03.pdf Size:1124K _rohm

Data Sheet 4V Drive Nch MOSFET RXH100N03 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 (8) (5) ?Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (4) 3) Small Surface Mount Package (SOP8). ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 RXH100

1.8. bsc100n03msg rev1.16.pdf Size:677K _infineon

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1.9. spb100n03s2-03 rev1.2.pdf Size:676K _infineon

SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature VDS 30 V � N-Channel RDS(on) max. SMD version 3 m? � Enhancement mode ID 100 A � Excellent Gate Charge x RDS(on) product (FOM) P-TO263 -3 � Superior thermal resistance � 175�C operating temperature � Avalanche rated � dv/d t rated; Halogen Free according to IEC61249-2-21 Marking Type Package PN0303 SPB100N03S2-

1.10. bsz100n03lsg rev2.0.pdf Size:631K _infineon

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1.11. bsz100n03msg rev2.0.pdf Size:628K _infineon

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1.12. bsc100n03ls rev1.6.pdf Size:689K _infineon

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x 44 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"-

1.13. ut100n03.pdf Size:268K _utc

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 ? DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with 1 low gate voltages. This device is suitable for use as a load 1 switch or in PWM applications. TO-252 TO-263 ? FEATURES * RDS(ON)= 5.3m?@VGS=10

1.14. ut100n03-q.pdf Size:261K _utc

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET ? DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON)= 5.3m?@VGS=10 V * RDS(ON) = 8.0m?@VGS=4.5 V ? SYM

1.15. 100n03.pdf Size:1800K _goford

GOFORD 100N03 DESCRIPTION The 100N03 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with 30V 3.5mΩ 100A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES � VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche

1.16. g100n03.pdf Size:1492K _goford

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 30V 4m Ω 100A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

1.17. br100n03.pdf Size:813K _blue-rocket-elect

BR100N03(BRCS100N03R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for h

1.18. cs100n03 b8.pdf Size:721K _crhj

Silicon N-Channel Power MOSFET R ○ CS100N03 B8 General Description： VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.19. cs100n03f b9.pdf Size:719K _crhj

Silicon N-Channel Power MOSFET R ○ CS100N03F B9 General Description： VDSS 30 V CS100N03F B9, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.20. cs100n03 b4.pdf Size:730K _crhj

Silicon N-Channel Power MOSFET R ○ CS100N03 B4 General Description： VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.21. cm100n03.pdf Size:127K _jdsemi

R CM100N03 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆30V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于 US P 开关电源、逆变器 等功率开关电路 2．主要特点 开关速度快 驱动简单，可并联使用 3．封装外形

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