All MOSFET. 100N03 Datasheet

 

100N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 100N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 180 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 175 °C
   Drain-Source Capacitance (Cd): 1300 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
   Package: TO220

 100N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

100N03 Datasheet (PDF)

 ..1. Size:1800K  goford
100n03.pdf

100N03
100N03

GOFORD100N03DESCRIPTIONThe 100N03 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with30V 3.5m 100ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = 30 V, ID = 100 ARDS(ON)

 0.1. Size:602K  1
msk100n03df.pdf

100N03
100N03

www.msksemi.comMSK100N03DFSemiconductorCompianceDescriptionThe MSK100N03DF uses advanced trench technologyD D D Dto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.S S S GGeneral FeaturesDFN3X3-8LVDS = 30V ID =100ARDS(ON)

 0.2. Size:331K  philips
phb100n03lt-01.pdf

100N03
100N03

PHB100N03LTN-channel enhancement mode field-effect transistorRev. 01 07 September 2000 Product specificationM3D1661. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHB100N03LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated

 0.3. Size:457K  st
std100n03lt4.pdf

100N03
100N03

STD100N03LSTD100N03L-1N-channel 30V - 0.0045 - 80A - DPAK - IPAKPlanar STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDType PwSTD100N03L 30 V

 0.4. Size:166K  rohm
rsh100n03tb1.pdf

100N03
100N03

4V Drive Nch MOSFET RSH100N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package

 0.5. Size:1124K  rohm
rxh100n03.pdf

100N03
100N03

Data Sheet4V Drive Nch MOSFETRXH100N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETSOP8(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (4)3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TBBasic ordering unit (piece

 0.6. Size:58K  rohm
rss100n03fu6tb rss100n03tb.pdf

100N03
100N03

RSS100N03 Transistor Switching (30V, 10A) RSS100N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP85.00.22) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.20.1 Applications (1)Source(2)SourcePower switching, DC/DC converter. (3)Source(4)Gate0.40.11.27(5)Drain0.1(6)DrainEach lead has same dim

 0.7. Size:153K  vishay
sqd100n03-3m4.pdf

100N03
100N03

SQD100N03-3m4www.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0034 AEC-Q101 QualifieddID (A) 100 Material categorization:Configuration SingleFor definitions of compliance please see www.vishay.com/doc?99912 TO-2

 0.8. Size:152K  vishay
sqd100n03-3m2l.pdf

100N03
100N03

SQD100N03-3m2Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0032 Material categorization:RDS(on) () at VGS = 4.5 V 0.0039For definitions of compliance please seeID (A) 100www.vishay.com/doc?

 0.9. Size:628K  infineon
bsz100n03msg.pdf

100N03
100N03

$) $ " $?88,S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD

 0.10. Size:524K  infineon
bsc100n03msg.pdf

100N03
100N03

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

 0.11. Size:631K  infineon
bsz100n03lsg.pdf

100N03
100N03

%* ! % E #;B 1= "% &#=;0@/? %@9 9 -=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x 4 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D1) G D ON Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86? 7B66

 0.12. Size:485K  infineon
bsc100n03ms.pdf

100N03
100N03

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

 0.13. Size:689K  infineon
bsc100n03ls.pdf

100N03
100N03

& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x 44 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8

 0.14. Size:676K  infineon
spb100n03s2-03 spb100n03s2.pdf

100N03
100N03

SPB100N03S2-03GOptiMOS TM Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3 m Enhancement modeID 100 A Excellent Gate Charge x RDS(on) product (FOM)P-TO263 -3 Superior thermal resistance 175C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 MarkingType Package

 0.15. Size:364K  utc
ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf

100N03
100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 0.16. Size:261K  utc
ut100n03-q.pdf

100N03
100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m@VGS=10 V * RDS(ON) = 8.0m@VGS=4.

 0.17. Size:364K  utc
ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf

100N03
100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 0.18. Size:268K  utc
ut100n03.pdf

100N03
100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 11TO-220 TO-251 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with 1low gate voltages. This device is suitable for use as a load 1switch or in PWM applications. TO-252TO-263 FEATURES * RDS(ON)= 5.3m

 0.19. Size:1492K  goford
g100n03.pdf

100N03
100N03

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 0.20. Size:463K  blue-rocket-elect
br100n03.pdf

100N03
100N03

BR100N03 Rev.F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

 0.21. Size:799K  blue-rocket-elect
brd100n03.pdf

100N03
100N03

BRD100N03 Rev.A .Jun. -2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

 0.22. Size:730K  crhj
cs100n03 b4.pdf

100N03
100N03

Silicon N-Channel Power MOSFET R CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.23. Size:719K  crhj
cs100n03f b9.pdf

100N03
100N03

Silicon N-Channel Power MOSFET R CS100N03F B9 General Description VDSS 30 V CS100N03F B9, the silicon N-channel Enhanced ID 100 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.24. Size:721K  crhj
cs100n03 b8.pdf

100N03
100N03

Silicon N-Channel Power MOSFET R CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.25. Size:127K  jdsemi
cm100n03.pdf

100N03
100N03

RCM100N03 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 USP 2 3

 0.26. Size:767K  feihonltd
fhu100n03c fhd100n03c fhp100n03c.pdf

100N03
100N03

N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala

 0.27. Size:757K  feihonltd
fhu100n03b fhd100n03b fhp100n03b.pdf

100N03
100N03

N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala

 0.28. Size:1017K  feihonltd
fhp100n03a.pdf

100N03
100N03

N N-CHANNEL MOSFETFHP100N03A 2 1

 0.29. Size:1061K  feihonltd
fhu100n03a fhd100n03a.pdf

100N03
100N03

2 1

 0.30. Size:1112K  matsuki electric
me100n03t me100n03t-g.pdf

100N03
100N03

ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME100N03T-G is the N-Channel logic enhancement mode RDS(ON)3m@VGS=10V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is especially Exceptional on-resistance

 0.31. Size:1244K  slkor
sl100n03r.pdf

100N03
100N03

SL100N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI

 0.32. Size:905K  umw-ic
100n03a.pdf

100N03
100N03

RUMW UMW 100N03A30V N-Channel PowerUMW 100N03AMosfetGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 30V,ID =90ARDS(ON),3.8 m(Typ) @ VGS =10VRDS(ON), 6.4m(Typ) @ VGS =4.5VLow on resistanceLow gate chargeFast s

 0.33. Size:819K  wuxi china
cs100n03b8.pdf

100N03
100N03

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist

 0.34. Size:828K  wuxi china
cs100n03b4.pdf

100N03
100N03

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist

 0.35. Size:781K  cn vbsemi
vbzm100n03.pdf

100N03
100N03

VBZM100N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.001 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.002 Package with Low Thermal ResistanceID (A) 260 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 20

 0.36. Size:1276K  cn vbsemi
vbze100n03.pdf

100N03
100N03

VBZE100N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0092at VGS = 10 V 6030 31 nC0.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

 0.37. Size:865K  cn vbsemi
rss100n03t.pdf

100N03
100N03

RSS100N03Twww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 0.38. Size:815K  cn vbsemi
ut100n03l.pdf

100N03
100N03

UT100N03Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB

 0.39. Size:704K  cn hmsemi
hm100n03.pdf

100N03
100N03

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 0.40. Size:759K  cn hmsemi
hm100n03k.pdf

100N03
100N03

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 0.41. Size:428K  cn hmsemi
hm100n03d.pdf

100N03
100N03

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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