100N03 Datasheet and Replacement

GOFORD100N03DESCRIPTIONThe 100N03 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with30V 3.5m 100ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = 30 V, ID = 100 ARDS(ON)

www.msksemi.comMSK100N03DFSemiconductorCompianceDescriptionThe MSK100N03DF uses advanced trench technologyD D D Dto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.S S S GGeneral FeaturesDFN3X3-8LVDS = 30V ID =100ARDS(ON)

PHB100N03LTN-channel enhancement mode field-effect transistorRev. 01 07 September 2000 Product specificationM3D1661. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHB100N03LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated

STD100N03LSTD100N03L-1N-channel 30V - 0.0045 - 80A - DPAK - IPAKPlanar STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDType PwSTD100N03L 30 V

4V Drive Nch MOSFET RSH100N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package

Data Sheet4V Drive Nch MOSFETRXH100N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETSOP8(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (4)3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TBBasic ordering unit (piece

RSS100N03 Transistor Switching (30V, 10A) RSS100N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP85.00.22) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.20.1 Applications (1)Source(2)SourcePower switching, DC/DC converter. (3)Source(4)Gate0.40.11.27(5)Drain0.1(6)DrainEach lead has same dim

SQD100N03-3m4www.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0034 AEC-Q101 QualifieddID (A) 100 Material categorization:Configuration SingleFor definitions of compliance please see www.vishay.com/doc?99912 TO-2

SQD100N03-3m2Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0032 Material categorization:RDS(on) () at VGS = 4.5 V 0.0039For definitions of compliance please seeID (A) 100www.vishay.com/doc?

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BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

%* ! % E #;B 1= "% &#=;0@/? %@9 9 -=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x 4 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D1) G D ON Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86? 7B66

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x 44 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8

SPB100N03S2-03GOptiMOS TM Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3 m Enhancement modeID 100 A Excellent Gate Charge x RDS(on) product (FOM)P-TO263 -3 Superior thermal resistance 175C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 MarkingType Package

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m@VGS=10 V * RDS(ON) = 8.0m@VGS=4.

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 11TO-220 TO-251 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with 1low gate voltages. This device is suitable for use as a load 1switch or in PWM applications. TO-252TO-263 FEATURES * RDS(ON)= 5.3m

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

BR100N03 Rev.F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

BRB100N03 Rev.A Jul.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficien

BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar

BRD100N03 Rev.A .Jun. -2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

Silicon N-Channel Power MOSFET R CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS100N03F B9 General Description VDSS 30 V CS100N03F B9, the silicon N-channel Enhanced ID 100 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

RCM100N03 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 USP 2 3

DH100N03B13/DHF100N03B13/DHI100N03B13/DHE100N03B13/DHB100N03B13/DHD100N03B13100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.3mDS(on) (TYP)standard.13 SI = 100AD2 Featur

N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala

N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala

N N-CHANNEL MOSFETFHP100N03A 2 1

2 1

ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME100N03T-G is the N-Channel logic enhancement mode RDS(ON)3m@VGS=10V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is especially Exceptional on-resistance

SL100N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI

RUMW UMW 100N03A30V N-Channel PowerUMW 100N03AMosfetGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 30V,ID =90ARDS(ON),3.8 m(Typ) @ VGS =10VRDS(ON), 6.4m(Typ) @ VGS =4.5VLow on resistanceLow gate chargeFast s

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist

VBZM100N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.001 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.002 Package with Low Thermal ResistanceID (A) 260 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 20

VBZE100N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0092at VGS = 10 V 6030 31 nC0.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

RSS100N03Twww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

UT100N03Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)