11N10C MOSFET. Datasheet pdf. Equivalent
Type Designator: 11N10C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 28 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 3 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 0.095 Ohm
Package: TO252
11N10C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
11N10C Datasheet (PDF)
1.1. 11n10c.pdf 
Size:1313K _goford
GOFORD 11N10C General Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) ID Schematic Diagram @ 10V (typ) 11A 100V 85mΩ ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Applicatio
5.1. sdf11n100.pdf Size:161K _solitron
Datasheet: G16 , G17 , 03N06 , 05N06 , 100N03 , 100P03 , 10N03 , 110N10 , IRF2807 , 120N03 , 1402TR , 1404TR , 140N10 , ECYA , G1002 , G1002L , G1003A .
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