11N10C Datasheet and Replacement
Type Designator: 11N10C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO252
11N10C substitution
11N10C Datasheet (PDF)
11n10c.pdf

GOFORD11N10CGeneral Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Applicatio
11n10.pdf

11N10DESCRIPTIONThe 11N10 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)100V 7.8m 110Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =100V,ID =110ARDS(ON)
11n10g.pdf

11N10GGeneral Description The 11N10G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Application
Datasheet: G16 , G17 , 03N06 , 05N06 , 100N03 , 100P03 , 10N03 , 110N10 , 2N7000 , 120N03 , 1402TR , 1404TR , 140N10 , ECYA , G1002 , G1002L , G1003A .
History: SL80N10 | STK14N10 | MCH6336 | 2SK741 | MCH6341
Keywords - 11N10C MOSFET datasheet
11N10C cross reference
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11N10C lookup
11N10C substitution
11N10C replacement
History: SL80N10 | STK14N10 | MCH6336 | 2SK741 | MCH6341



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