All MOSFET. 11N10C Datasheet

 

11N10C MOSFET. Datasheet pdf. Equivalent

Type Designator: 11N10C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.095 Ohm

Package: TO252

11N10C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

11N10C Datasheet (PDF)

1.1. 11n10c.pdf Size:1313K _goford

11N10C
11N10C

GOFORD 11N10C General Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) ID Schematic Diagram @ 10V (typ) 11A 100V 85mΩ ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Applicatio

5.1. sdf11n100.pdf Size:161K _solitron

11N10C



Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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