All MOSFET. 11N10C Datasheet

 

11N10C Datasheet and Replacement


   Type Designator: 11N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO252
 

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11N10C Datasheet (PDF)

 ..1. Size:1313K  goford
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11N10C

GOFORD11N10CGeneral Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Applicatio

 9.1. Size:161K  solitron
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11N10C

 9.2. Size:1709K  gfd
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11N10C

11N10DESCRIPTIONThe 11N10 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)100V 7.8m 110Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =100V,ID =110ARDS(ON)

 9.3. Size:1143K  gfd
11n10g.pdf pdf_icon

11N10C

11N10GGeneral Description The 11N10G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Application

Datasheet: G16 , G17 , 03N06 , 05N06 , 100N03 , 100P03 , 10N03 , 110N10 , 2N7000 , 120N03 , 1402TR , 1404TR , 140N10 , ECYA , G1002 , G1002L , G1003A .

History: SL80N10 | STK14N10 | MCH6336 | 2SK741 | MCH6341

Keywords - 11N10C MOSFET datasheet

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