G1002L Datasheet and Replacement
Type Designator: G1002L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT23-3L
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G1002L Datasheet (PDF)
g1002l.pdf

GOFORDG1002LDescription The G1002L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @10V (typ)2Am100V 180 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package f
rej03g1002 2sk2202ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
g1002 to92.pdf

GOFORDG1002Description DThe G1002 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features SVDSS RDS(ON) IDSchematic diagram @10V (typ)2Am100V 200 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: UTT25P10L-TQ2-R | HLML6401 | HMS4296B | QM2413K | STI11NM60ND | FDT86244 | AP85T03GH-HF
Keywords - G1002L MOSFET datasheet
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History: UTT25P10L-TQ2-R | HLML6401 | HMS4296B | QM2413K | STI11NM60ND | FDT86244 | AP85T03GH-HF



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