G1002L - аналоги, параметры транзистора - Справочник транзисторов

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GOFORD G1002L Description The G1002L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @ 10V (typ) 2A m 100V 180 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package f

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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GOFORD G1002 Description D The G1002 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDSS RDS(ON) ID Schematic diagram @ 10V (typ) 2A m 100V 200 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

Другие MOSFET... 110N10 , 11N10C , 120N03 , 1402TR , 1404TR , 140N10 , ECYA , G1002 , AO3401 , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 , G2005 , G2005K .