All MOSFET. G1008 Datasheet

 

G1008 Datasheet and Replacement


   Type Designator: G1008
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOP8
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G1008 Datasheet (PDF)

 ..1. Size:1907K  goford
 g1008.pdf pdf_icon

G1008

GOFORDG1008Description The G1008 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. Schematic diagram General Features VDSS RDS(ON) ID @10V (typ)100V 110 8Am High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Marking

 0.1. Size:102K  renesas
 rej03g1008 2sk2329lsds.pdf pdf_icon

G1008

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTA08N120P | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | STD6N60M2 | UPA2756GR

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