G1008 PDF and Equivalents Search

 

G1008 Specs and Replacement

Type Designator: G1008

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SOP8

G1008 substitution

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G1008 datasheet

 ..1. Size:1907K  goford
 g1008.pdf pdf_icon

G1008

GOFORD G1008 Description The G1008 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. Schematic diagram General Features VDSS RDS(ON) ID @ 10V (typ) 100V 110 8A m High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Marking ... See More ⇒

 0.1. Size:102K  renesas
 rej03g1008 2sk2329lsds.pdf pdf_icon

G1008

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: 1404TR , 140N10 , ECYA , G1002 , G1002L , G1003A , G1006 , G1006A , SPP20N60C3 , G2002 , G2003 , G2005 , G2005K , G2009 , G2009K , G20N20 , G2304 .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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