All MOSFET. 21N06 Datasheet

 

21N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 21N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 2.9 nS

Drain-Source Capacitance (Cd): 102 pF

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: TO252

21N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

21N06 Datasheet (PDF)

1.1. phb21n06t 1.pdf Size:56K _philips2

21N06
21N06

Philips Semiconductors Product specification TrenchMOS? transistor PHB21N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 21 A trench technology the device Ptot To

1.2. phd21n06lt.pdf Size:113K _philips2

21N06
21N06

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 55 V • Low on-state resistance • Fast switching ID = 19 A • Logic level compatible RDS(ON) ≤ 75 mΩ (VGS = 5 V) g RDS(ON) ≤ 70 mΩ (VGS = 10 V) s GENERAL DESCRIPTION

 1.3. php21n06t.pdf Size:52K _philips2

21N06
21N06

Philips Semiconductors Product specification TrenchMOS transistor PHP21N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 21 A features very low on-state r

1.4. phb21n06lt phd21n06lt php21n06lt.pdf Size:114K _philips2

21N06
21N06

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatible RDS(ON) ? 75 m? (VGS = 5 V) g RDS(ON) ? 70 m? (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mo

 1.5. stp21n06l.pdf Size:383K _st

21N06
21N06

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP21N06L 60 V < 0.085 ? 21 A STP21N06LFI 60 V < 0.085 ? 14 A TYPICAL R = 0.065 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLI

1.6. stp21n06.pdf Size:197K _st

21N06
21N06

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP21N06L 60 V < 0.085 ? 21 A STP21N06LFI 60 V < 0.085 ? 14 A TYPICAL RDS(on) = 0.065 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT o 175 C OPERATING TEMPERATURE APP

1.7. 21n06.pdf Size:1420K _goford

21N06
21N06

GOFORD 21N06 DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDSS R DS(ON) ID Schematic diagram @ 10V (typ) 60V 24 m Ω 21 A ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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