All MOSFET. 21N06 Datasheet

 

21N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 21N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 2.9 nS

Drain-Source Capacitance (Cd): 102 pF

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: TO252

21N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

21N06 Datasheet (PDF)

1.1. rsd221n06.pdf Size:366K _update_mosfet

21N06
21N06

RSD221N06 Nch 60V 22A Power MOSFET Datasheet lOutline VDSS 60V CPT3 (SC-63) RDS(on) (Max.) 26mW (3) ID 22A (2) (1) PD 20W lFeatures lInner circuit (3) 1) Low on-resistance. (1) Gate *1 2) Fast switching speed. (2) Drain (3) Source (1) 3) Drive circuits can be simple. *2 *1 ESD PROTECTION DIODE 4) Parallel use is easy. *2 BODY DIODE 5) Pb-free

1.2. rsd221n06fra.pdf Size:891K _update_mosfet

21N06
21N06

RSD221N06FRA Nch 60V 22A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 60V CPT3 (SC-63) RDS(on) (Max.) 26mW (3) ID 22A (2) (1) PD 20W lFeatures lInner circuit (3) 1) Low on-resistance. (1) Gate *1 2) Fast switching speed. (2) Drain (3) Source (1) 3) Drive circuits can be simple. *2 *1 ESD PROTECTION DIODE 4) Parallel use is easy. *2

 1.3. ipp024n06n3g ipb021n06n3g ipi024n06n3g.pdf Size:999K _update-mosfet

21N06
21N06

 pe IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G ™ 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q .5BI B5C9CD1>35 + D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1)

1.4. php21n06t.pdf Size:52K _philips2

21N06
21N06

Philips Semiconductors Product specification TrenchMOS transistor PHP21N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 21 A features very low on-state r

 1.5. phb21n06t 1.pdf Size:56K _philips2

21N06
21N06

Philips Semiconductors Product specification TrenchMOS? transistor PHB21N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 21 A trench technology the device Ptot To

1.6. phb21n06lt phd21n06lt php21n06lt.pdf Size:114K _philips2

21N06
21N06

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatible RDS(ON) ? 75 m? (VGS = 5 V) g RDS(ON) ? 70 m? (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mo

1.7. phd21n06lt.pdf Size:113K _philips2

21N06
21N06

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 55 V • Low on-state resistance • Fast switching ID = 19 A • Logic level compatible RDS(ON) ≤ 75 mΩ (VGS = 5 V) g RDS(ON) ≤ 70 mΩ (VGS = 10 V) s GENERAL DESCRIPTION

1.8. stp21n06.pdf Size:197K _st

21N06
21N06

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP21N06L 60 V < 0.085 ? 21 A STP21N06LFI 60 V < 0.085 ? 14 A TYPICAL RDS(on) = 0.065 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT o 175 C OPERATING TEMPERATURE APP

1.9. stp21n06l.pdf Size:383K _st

21N06
21N06

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP21N06L 60 V < 0.085 ? 21 A STP21N06LFI 60 V < 0.085 ? 14 A TYPICAL R = 0.065 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLI

1.10. 21n06.pdf Size:1420K _goford

21N06
21N06

GOFORD 21N06 DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDSS R DS(ON) ID Schematic diagram @ 10V (typ) 60V 24 m Ω 21 A ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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