21N06
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 21N06
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 45
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 21
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 2.9
ns
Cossⓘ - Выходная емкость: 102
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03
Ohm
Тип корпуса:
TO252
Аналог (замена) для 21N06
-
подбор ⓘ MOSFET транзистора по параметрам
21N06
Datasheet (PDF)
..1. Size:1420K goford
21n06.pdf 

GOFORD 21N06DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDSS R DS(ON) ID Schematic diagram @ 10V (typ) 60V 24 m 21 A High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current
0.1. Size:113K philips
phd21n06lt.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatibleRDS(ON) 75 m (VGS = 5 V)gRDS(ON) 70 m (VGS = 10 V)sGENERAL DESCRIPTION
0.2. Size:56K philips
phb21n06t 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHB21N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 21 Atrench technology the devic
0.3. Size:52K philips
php21n06t.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHP21N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 21 Afeatures very low on-state r
0.4. Size:114K philips
phb21n06lt phd21n06lt php21n06lt.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatibleRDS(ON) 75 m (VGS = 5 V)gRDS(ON) 70 m (VGS = 10 V)sGENERAL DESCRIPTION
0.5. Size:197K st
stp21n06.pdf 

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V
0.6. Size:383K st
stp21n06l.pdf 

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V
0.7. Size:229K nxp
php21n06lt phb21n06lt phd21n06lt.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.8. Size:366K rohm
rsd221n06.pdf 

RSD221N06 Nch 60V 22A Power MOSFET DatasheetlOutlineVDSS60V CPT3(SC-63)RDS(on) (Max.)26mW(3) ID22A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.(1) Gate *1 2) Fast switching speed.(2) Drain (3) Source (1) 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.*2 BODY DIODE 5) Pb-free
0.9. Size:891K rohm
rsd221n06fra.pdf 

RSD221N06FRA Nch 60V 22A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS60V CPT3(SC-63)RDS(on) (Max.)26mW(3) ID22A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.(1) Gate *1 2) Fast switching speed.(2) Drain (3) Source (1) 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.*2
0.10. Size:999K infineon
ipp024n06n3g ipb021n06n3g ipi024n06n3g.pdf 

pe IPB021N06N3 G IPI024N06N3 GIPP024N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 1 DQ H35
0.11. Size:483K infineon
ipb021n06n3g ipi024n06n3g ipp024n06n3g.pdf 

Type IPB021N06N3 G IPI024N06N3 GIPP024N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 2.1mDS(on),max (SMD) Optimized technology for DC/DC convertersI 120 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanch
0.12. Size:772K cn hunteck
hgn021n06sl.pdf 

HGN021N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level1.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness172 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested85 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
0.13. Size:228K inchange semiconductor
ipb021n06n3g.pdf 

Isc N-Channel MOSFET Transistor IPB021N06N3GFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Другие MOSFET... G1815
, G1816
, G1825
, 15P03
, 16N10
, 18N10
, 2002A
, 20P10
, 7N60
, 22N10
, 2301H
, 2301L
, 25P06
, 25P10
, 25P10G
, 28N10
, 28P55
.
History: AOL1454G
| PE614DX
| AO4454