30P55
MOSFET. Datasheet pdf. Equivalent
Type Designator: 30P55
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 56
nC
Cossⓘ -
Output Capacitance: 240
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO252
30P55
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
30P55
Datasheet (PDF)
..1. Size:2245K goford
30p55 1.pdf 
GOFORD30P55DESCRIPTIONThe 30P55 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with-55V -- -30ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = -55 V, ID = -30 ATO-252 RDS(ON)
..2. Size:1835K goford
30p55.pdf
GOFORD30P55DESCRIPTIONThe 30P55 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with-55V -- -30ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = -55 V, ID = -30 ATO-252 RDS(ON)
0.1. Size:577K ncepower
nce30p55k.pdf
NCE30P55Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P55K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-30V,I =-55ADS DSchematic diagramR
0.2. Size:314K ncepower
nce30p55l.pdf
NCE30P55Lhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON)
0.3. Size:524K cn hmsemi
hm30p55k.pdf
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)
0.4. Size:547K cn hmsemi
hm30p55.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)
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