30P55 - описание и поиск аналогов

GOFORD 30P55 DESCRIPTION The 30P55 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with -55V -- -30A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES VDS = -55 V, ID = -30 A TO-252 RDS(ON)

GOFORD 30P55 DESCRIPTION The 30P55 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with -55V -- -30A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES VDS = -55 V, ID = -30 A TO-252 RDS(ON)

NCE30P55K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-30V,I =-55A DS D Schematic diagram R

NCE30P55L http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON)

AGM30P55D1 General Description Product Summary The AGM30P55D1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 6.5m -65A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to mi

AGM30P55D General Description The AGM30P55D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features -30V 5m -65A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

AGM30P55A Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics V =-10V GS V =-4.5V GS Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature www.agm-mos.com 3 VER2.68 AGM30P55A Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)