GOFORD30P55DESCRIPTIONThe 30P55 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with-55V -- -30ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = -55 V, ID = -30 ATO-252 RDS(ON)

GOFORD30P55DESCRIPTIONThe 30P55 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with-55V -- -30ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = -55 V, ID = -30 ATO-252 RDS(ON)

NCE30P55Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P55K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-30V,I =-55ADS DSchematic diagramR

NCE30P55Lhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON)

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)