Справочник MOSFET. 30P55

 

30P55 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 30P55
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 56 nC
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO252

 Аналог (замена) для 30P55

 

 

30P55 Datasheet (PDF)

 ..1. Size:2245K  goford
 30p55 1.pdf

30P55 30P55

GOFORD30P55DESCRIPTIONThe 30P55 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with-55V -- -30ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = -55 V, ID = -30 ATO-252 RDS(ON)

 ..2. Size:1835K  goford
 30p55.pdf

30P55 30P55

GOFORD30P55DESCRIPTIONThe 30P55 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with-55V -- -30ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = -55 V, ID = -30 ATO-252 RDS(ON)

 0.1. Size:577K  ncepower
 nce30p55k.pdf

30P55 30P55

NCE30P55Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P55K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-30V,I =-55ADS DSchematic diagramR

 0.2. Size:314K  ncepower
 nce30p55l.pdf

30P55 30P55

NCE30P55Lhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON)

 0.3. Size:524K  cn hmsemi
 hm30p55k.pdf

30P55 30P55

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

 0.4. Size:547K  cn hmsemi
 hm30p55.pdf

30P55 30P55

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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