All MOSFET. 3400L Datasheet

 

3400L MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3400L
   Marking Code: 3400L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT23-3L

 3400L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3400L Datasheet (PDF)

 ..1. Size:1442K  goford
 3400l.pdf

3400L 3400L

GOFORD3400LDESCRIPTION The 3400L uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) (Typ)10V 3400L 3

 0.1. Size:233K  utc
 ut3400l-ae2-r ut3400g-ae2-r ut3400l-ae3-r ut3400g-ae3-r.pdf

3400L 3400L

UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET 5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER 3MOSFET 21SOT-23(EIAJ SC-59) DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing 3the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. 2The UTC UT3400 is optimized for applications, such as a lo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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