G3710 Specs and Replacement
Type Designator: G3710
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52.5 nS
Cossⓘ - Output Capacitance: 665.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO220
G3710 substitution
- MOSFET ⓘ Cross-Reference Search
G3710 datasheet
g3710.pdf
GOFORD G3710 Description Features VDSS RDS(ON) ID @ 10V (typ) 21m 59 A 100V Fast switching 100% avalanche tested Improved dv/dt capability Application UPS Inverter Electric tools High efficiency switch mode power supplies Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-220 V Dra... See More ⇒
Detailed specifications: 68P40, 80N03, 80N04, 80N08TR, 8205A, 8205B, G3205, G1010, AO4468, 5N20A, 630A, 640, 18N20, 18N20A, 2N25, 3N25, 740
Keywords - G3710 MOSFET specs
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