G3710 Datasheet and Replacement
Type Designator: G3710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 52.5 nS
Cossⓘ - Output Capacitance: 665.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO220
G3710 substitution
G3710 Datasheet (PDF)
g3710.pdf

GOFORDG3710Description Features VDSS RDS(ON) ID @10V (typ) 21m 59 A100V Fast switching 100% avalanche tested Improved dv/dt capability Application UPS Inverter Electric tools High efficiency switch mode power supplies Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-220 V Dra
Datasheet: 68P40 , 80N03 , 80N04 , 80N08TR , 8205A , 8205B , G3205 , G1010 , IRFP064N , 5N20A , 630A , 640 , 18N20 , 18N20A , 2N25 , 3N25 , 740 .
History: MXP4005CT | IPB34CN10N | FQD2N50TF | STU12N65M5 | DHFSJ5N65 | P2610BT | DMN3035LWN
Keywords - G3710 MOSFET datasheet
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History: MXP4005CT | IPB34CN10N | FQD2N50TF | STU12N65M5 | DHFSJ5N65 | P2610BT | DMN3035LWN



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