2N6660-LCC4 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6660-LCC4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 6.25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 1.1 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 50 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: LCC4
2N6660-LCC4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6660-LCC4 Datasheet (PDF)
3.1. 2n6656-59 2n6660-61.pdf 
Size:42K _no
4.1. 2n6660.pdf Size:527K _supertex
Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertexs well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a devic
4.2. 2n6660 2n6661.pdf Size:21K _supertex
2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information.
Datasheet: 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , IRF830 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX , 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM .
