All MOSFET. 18N20 Datasheet

 

18N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: 18N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 21.1 nS

Drain-Source Capacitance (Cd): 81.2 pF

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO251_TO252_TO220

18N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

18N20 Datasheet (PDF)

1.1. tmp18n20z tmpf18n20z.pdf Size:591K _update

18N20
18N20

TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)MAX  100% avalanche tested 200V 18A <0.17W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP18N20Z / TMPF18N20Z TO-220 / TO-220F TMP18N20Z / TMPF18N20Z RoHS TMP18N20ZG / TMPF18N20ZG TO-220 / TO-220

1.2. tmu18n20z.pdf Size:437K _update

18N20
18N20

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on) MAX  100% avalanche tested 200V 18A <0.17W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD18N20Z / TMU18N20Z D-PAK/I-PAK TMD18N20Z / TMU18N20Z RoHS TMD18N20ZG / TMU18N20ZG D-PAK/I-P

 1.3. hy18n20t.pdf Size:214K _upd-mosfet

18N20
18N20

HY18N20T 200V / 18A 200V, RDS(ON)=92mW@VGS=10V, ID=10A N-Channel Enhancement Mode MOSFET Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain 2 • In compliance with E

1.4. hy18n20d.pdf Size:213K _upd-mosfet

18N20
18N20

HY18N20D 200V / 18A 200V, RDS(ON)=92mW@VGS=10V, ID=10A N-Channel Enhancement Mode MOSFET Features TO-252 • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain 2 • In compliance with EU R

 1.5. fdpf18n20f.pdf Size:658K _upd-mosfet

18N20
18N20

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14Ω Features Description • RDS(on) = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 20nC) stripe, DMOS technology. • Low Crss ( Typ. 24pF) This advanced technology h

1.6. tmd18n20z.pdf Size:437K _upd-mosfet

18N20
18N20

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on) MAX  100% avalanche tested 200V 18A <0.17W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD18N20Z / TMU18N20Z D-PAK/I-PAK TMD18N20Z / TMU18N20Z RoHS TMD18N20ZG / TMU18N20ZG D-PAK/I-P

1.7. wvm18n20.pdf Size:23K _update_mosfet

18N20

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM18N20(IRF240) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

1.8. php18n20e 1.pdf Size:53K _philips2

18N20
18N20

Philips Semiconductors Product specification PowerMOS transistor PHP18N20E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 200 V avalanche energy capability, stable ID Drain current (DC) 18 A blocking voltage, fast switching and Ptot Total power dissip

1.9. stb18n20.pdf Size:126K _st

18N20
18N20

STB18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB18N20 200 V < 0.18 ? 18 A TYPICAL R = 0.145 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 3 3 2 1 1 APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER I2PAK

1.10. fdp18n20f fdpf18n20f.pdf Size:685K _fairchild_semi

18N20
18N20

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14? Features Description RDS(on) = 0.12? ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology has been especia

1.11. fqd18n20v2 fqu18n20v2.pdf Size:748K _fairchild_semi

18N20
18N20

January 2009 QFET FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15A, 200V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.12. fqd18n20v2tf fqd18n20v2tm.pdf Size:748K _fairchild_semi

18N20
18N20

January 2009 QFET® FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been espec

1.13. fqpf18n20v2.pdf Size:793K _fairchild_semi

18N20
18N20

TM QFET FQP18N20V2/FQPF18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailore

1.14. fqp18n20v2.pdf Size:793K _fairchild_semi

18N20
18N20

TM QFET FQP18N20V2/FQPF18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailore

1.15. fdd18n20lz.pdf Size:1212K _fairchild_semi

18N20
18N20

December 2013 FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features Description • R DS(on) = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 30 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low CRSS (Typ. 25 pF)

1.16. fdpf18n20ft g.pdf Size:601K _fairchild_semi

18N20
18N20

April 2013 FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 m � Features Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage • RDS(on) = 129 mΩ (Typ.) @ VGS = 10 V, ID = 9 A MOSFET family based on planar stripe and DMOS technology. This • Low Gate Charge (Typ. 20 nC) MOSFET is tailored to reduce on-state resistance, and to provide bette

1.17. ap18n20ags-hf.pdf Size:57K _a-power

18N20
18N20

AP18N20AGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS 200V Ў Simple Drive Requirement RDS(ON) 170m? Ў Fast Switching Characteristic ID 18A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized de

1.18. ap18n20gj-hf.pdf Size:99K _a-power

18N20
18N20

AP18N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 200V D Ў Low On-resistance RDS(ON) 170m? Ў Fast Switching Characteristics ID 18A Ў RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-25

1.19. ap18n20gi.pdf Size:155K _a-power

18N20
18N20

AP18N20GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS 200V Ў Simple Drive Requirement RDS(ON) 170m? Ў Fast Switching Characteristic ID 18A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G D low on-resistance an

1.20. ap18n20gs.pdf Size:172K _a-power

18N20
18N20

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low Gate Charge BVDSS 200V ▼ Simple Drive Requirement RDS(ON) 170mΩ ▼ Fast Switching Characteristic ID 18A G ▼ RoHS Compliant & Halogen-Free S Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

1.21. ap18n20gp-hf.pdf Size:102K _a-power

18N20
18N20

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS 200V Ў Simple Drive Requirement RDS(ON) 170m? Ў Fast Switching Characteristic ID 18A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D

1.22. ap18n20gs-hf.pdf Size:102K _a-power

18N20
18N20

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS 200V Ў Simple Drive Requirement RDS(ON) 170m? Ў Fast Switching Characteristic ID 18A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D

1.23. ap18n20gh-hf.pdf Size:99K _a-power

18N20
18N20

AP18N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 200V D Ў Low On-resistance RDS(ON) 170m? Ў Fast Switching Characteristics ID 18A Ў RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-25

1.24. mtn18n20fp.pdf Size:412K _cystek

18N20
18N20

Spec. No. : C840FP Issued Date : 2012.03.30 CYStech Electronics Corp. Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 200V RDSON(TYP) : 80mΩ MTN18N20FP ID : 18A Description The MTN18N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

1.25. 18n20.pdf Size:1994K _goford

18N20
18N20

GOFORD 18N20 Description Features • VDSS RDS(ON) ID @ 10V (typ) Ω 0.136 18A 200V • Fast switching • 100% avalanche tested TO-251 TO-252 • Improved dv/dt capability Application • DC-DC & DC-AC Converters for telecom, industrial and consumer environment • Uninterruptible Power Supply (UPS) • Switch Mode Low Power Supplies • Industrial Actuators

1.26. 18n20a.pdf Size:1814K _goford

18N20
18N20

GOFORD 18N20A Description Features • VDSS RDS(ON) ID @ 10V (typ) Ω 0.136 18A 200V • Fast switching TO-251 TO-252 • 100% avalanche tested • Improved dv/dt capability Application • DC-DC & DC-AC Converters for telecom, industrial and consumer environment • Uninterruptible Power Supply (UPS) • Switch Mode Low Power Supplies • Industrial Actuators

1.27. cm18n20.pdf Size:122K _jdsemi

18N20
18N20

R C1N0 M82 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆200V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电源、适配器等功率开关电路 2 .主要特点 开关速度快 驱动简单,可并联使用 3 .封装外形 TO-220A 4

1.28. wfp18n20.pdf Size:556K _winsemi

18N20
18N20

WFP18N20 WFP18N20 WFP18N20 WFP18N20 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 18A,200V,R (Max 0.18Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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