All MOSFET. 2N25 Datasheet

 

2N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8.27 nS

Drain-Source Capacitance (Cd): 11.2 pF

Maximum Drain-Source On-State Resistance (Rds): 2.6 Ohm

Package: TO251_TO252

2N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N25 Datasheet (PDF)

1.1. irfu12n25dpbf.pdf Size:225K _upd

2N25
2N25

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

1.2. irfr12n25dpbf.pdf Size:225K _upd

2N25
2N25

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 1.3. irfu12n25d.pdf Size:109K _upd

2N25
2N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

1.4. mtw32n25e.pdf Size:135K _motorola

2N25
2N25

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N25E/D Designer's? Data Sheet MTW32N25E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.08 OHM energy in the avalanche

 1.5. mtw32n25erev2.pdf Size:151K _motorola

2N25
2N25

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N25E/D Designer's? Data Sheet MTW32N25E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.08 OHM energy in the avalanche

1.6. mtv32n25e.pdf Size:267K _motorola

2N25
2N25

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTV32N25E/D Designer's? Data Sheet MTV32N25E TMOS E-FET.? Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTS The D3PAK package has the capability of housing the largest chip RDS(on) = 0.08 OHM size of any standard, plastic, surface mount power s

1.7. mmft2n25e.pdf Size:143K _motorola

2N25
2N25

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET? High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS EFET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device also offer

1.8. mmft2n25erev0.pdf Size:139K _motorola

2N25
2N25

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET? High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS EFET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device also offer

1.9. stp52n25m5.pdf Size:474K _st

2N25
2N25

STP52N25M5 N-channel 250 V, 0.055 ?, 28 A, TO-220 MDmeshTM V Power MOSFET Features RDS(on) Type VDSS ID max STP52N25M5 250 V < 0.065 ? 28 A Amongst the best RDS(on)* area 3 2 High dv/dt capability 1 Excellent switching performance TO-220 Easy to drive 100% avalanche tested Application Switching applications Figure 1. Internal schematic diagram Description D(2) T

1.10. stl52n25m5.pdf Size:772K _st

2N25
2N25

STL52N25M5 N-channel 250 V, 0.055 ?, 28 A, PowerFLAT (5x6) MDmesh V Power MOSFET Features RDS(on) Type VDSS ID(1) max. STL52N25M5 250 V < 0.065 ? 28 A 1. This value is rated according Rthj-case. Amongst the best RDS(on)* area Very low profile package (1 mm max.) PowerFLAT (5x6) Excellent switching performance High dv/dt capability 100% avalanche tested Application Fi

1.11. fqa62n25c.pdf Size:597K _fairchild_semi

2N25
2N25

QFET FQA62N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 62A, 250V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 100 nC) planar, DMOS technology. Low Crss ( typical 63.5 pF) This advanced technology has been especially tailored to Fast switching minimi

1.12. irfr12n25d.pdf Size:104K _international_rectifier

2N25
2N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N

1.13. ixtk82n25p ixtq82n25p ixtt82n25p.pdf Size:294K _ixys

2N25
2N25

IXTK 82N25P VDSS = 250 V PolarHTTM IXTQ 82N25P ID25 = 82 A Power MOSFET ? ? IXTT 82N25P RDS(on) ? 35 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C82 A (TAB) S ID(RMS) External

1.14. ixta42n25p ixtp42n25p ixtq42n25p.pdf Size:252K _ixys

2N25
2N25

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET ? ? IXTQ 42N25P RDS(on) ? 84 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 30 V ID25 TC = 25 C42 A IDM T

1.15. ixtk62n25.pdf Size:583K _ixys

2N25
2N25

 IXTK 62N25 VDSS = 250 V High Current ID25 = 62 A MegaMOSTMFET Ω RDS(on) = 35 mΩ Ω Ω Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings TO-264 VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS Continuous ±20 V VGSM Transient ±30 V D (TAB) G ID25 TC = 25°C62 A D IDM TC = 25°C, pulse width

1.16. ixta02n250hv.pdf Size:184K _ixys

2N25
2N25

Advance Technical Information High Voltage IXTA02N250HV VDSS = 2500V Power MOSFET ID25 = 200mA ≤ Ω RDS(on) ≤ 450Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V G = Gate D = Drain VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V S = Source Tab = Drain VGSS

1.17. 12n25.pdf Size:189K _utc

2N25
2N25

UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

1.18. 2n2509.pdf Size:100K _no

2N25

1.19. rt2n25m.pdf Size:163K _isahaya

2N25
2N25

 RT2N25M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. ① ⑤ FEATURE ② Built-in bias resistor (R1=200kΩ) Mini package for easy mounting ③ ④ APPLICATION Inverted circuit, Switching circuit, Interface circu

1.20. ixgh2n250.pdf Size:175K _igbt

2N25
2N25

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25°C to 150°C 2500 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V TO-268 (IXGT) IC2

1.21. ixbh42n250.pdf Size:206K _igbt

2N25
2N25

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH42N250 BIMOSFETTM Monolithic IC110 = 42A Bipolar MOS Transistor  VCE(sat)   3.0V   TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1M 2500 V E VGES Continuous ± 25 V G = Gate C = Collector VGEM Transient ± 35

1.22. ixbh2n250.pdf Size:180K _igbt

2N25
2N25

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A ≤ VCE(sat) ≤ ≤ 3.50V ≤ ≤ Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V G C (TAB) C VGES Continuous ± 20 V E VGEM Transient ± 30 V IC

1.23. ixbt2n250.pdf Size:180K _igbt

2N25
2N25

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A ≤ VCE(sat) ≤ ≤ 3.50V ≤ ≤ Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V G C (TAB) C VGES Continuous ± 20 V E VGEM Transient ± 30 V IC

1.24. ixgt2n250.pdf Size:175K _igbt_a

2N25
2N25

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25°C to 150°C 2500 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V TO-268 (IXGT) IC2

1.25. 2n25.pdf Size:1372K _goford

2N25
2N25

GOFORD 2N25 Description Features • VDSS RDS(ON) ID @ 10V (typ) 2A 250V 2.2Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-251 TO-252 Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive Absolute Maximum Ratings TC=25℃ unless otherwise specified Max. Symbol Parameter U

1.26. sdu02n25 sdd02n25.pdf Size:143K _samhop

2N25
2N25

Green Product SDU/D02N25 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 250V 2A 3.2 @ VGS=10V Suface Mount Package. G S SDU SERIES SDD SERIES TO - 252AA(D-PAK) TO - 251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Datasheet: G3205 , G1010 , G3710 , 5N20A , 630A , 640 , 18N20 , 18N20A , IRF840 , 3N25 , 740 , 840 , 16N50F , 13N50F , 20N50 , 5N60F , 7N60F .

 
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