3N25 Datasheet PDF and Equivalents Search

 ..1. Size:1752K  goford
 3n25.pdf

GOFORD 3N25 Description Features - VDSS RDS(ON) ID @ 10V (typ) 3A 250V 1.4 Fast switching 100% avalanche tested Improved dv/dt capability TO-251 TO-252 Application High frequency switching mode power supply Uninterruptible Power Supply (UPS) Electronic ballast Absolute Maximum Ratings TC=25 unless otherwise specified Max. ... See More ⇒

 0.1. Size:172K  1
 std3n25 std3n25-1 std3n25t4.pdf

STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N25 250 V ... See More ⇒

 0.2. Size:219K  motorola
 mtd3n25e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3N25E/D Designer's Data Sheet TMOS E-FET. MTD3N25E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3 AMPERES energy in the avalanche and commutation modes. The new en... See More ⇒

 0.3. Size:253K  motorola
 mtd3n25erev2x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3N25E/D Designer's Data Sheet TMOS E-FET. MTD3N25E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3 AMPERES energy in the avalanche and commutation modes. The new en... See More ⇒

 0.4. Size:181K  motorola
 mtp3n25e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N25E/D Designer's Data Sheet MTP3N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3.0 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effic... See More ⇒

 0.5. Size:95K  motorola
 mtw23n25e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW23N25E/D Designer's Data Sheet MTW23N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 23 AMPERES 250 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.11 OHM energy in ... See More ⇒

 0.6. Size:208K  motorola
 mtp3n25erev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N25E/D Designer's Data Sheet MTP3N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3.0 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effic... See More ⇒

 0.7. Size:152K  motorola
 mtw23n25erev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW23N25E/D Designer's Data Sheet MTW23N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 23 AMPERES 250 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.11 OHM energy in ... See More ⇒

 0.8. Size:172K  st
 std3n25.pdf

STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N25 250 V ... See More ⇒

 0.9. Size:885K  fairchild semi
 fdi33n25.pdf

May 2006 TM UniFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 36.8 nC) stripe, DMOS technology. Low Crss ( typical 39 pF) This advanced technology has been especially ... See More ⇒

 0.10. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf

November 2000 TM QFET QFET QFET QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technolo... See More ⇒

 0.11. Size:612K  fairchild semi
 fqp3n25.pdf

November 2000 TM QFET QFET QFET QFET FQP3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technology has bee... See More ⇒

 0.12. Size:1205K  fairchild semi
 fdp33n25 fdpf33n25t.pdf

October TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switching This advanced technolog... See More ⇒

 0.13. Size:643K  fairchild semi
 fda33n25.pdf

September 2007 UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094 Features Description RDS(on) = 0.088 ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 36nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been... See More ⇒

 0.14. Size:448K  fairchild semi
 fdpf33n25trdtu.pdf

August 2014 FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF) p... See More ⇒

 0.15. Size:916K  fairchild semi
 fdb33n25 fdi33n25.pdf

May 2006 TM UniFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 36.8 nC) stripe, DMOS technology. Low Crss ( typical 39 pF) This advanced technology has been especially ... See More ⇒

 0.16. Size:724K  fairchild semi
 fqpf3n25.pdf

November 2013 FQPF3N25 N-Channel QFET MOSFET 250 V, 2.3 A, 2.2 Description Features These N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 1.15 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) technology has been especially tailored... See More ⇒

 0.17. Size:534K  onsemi
 fdb33n25.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.18. Size:526K  onsemi
 fdpf33n25t.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.19. Size:478K  onsemi
 fdp33n25.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.20. Size:892K  onsemi
 fqpf3n25.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.21. Size:156K  utc
 uf3n25.pdf

UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1 SOT-223 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge 1 and superior switching performance. TO-252 FEATURES * RDS(ON)... See More ⇒

 0.22. Size:512K  jilin sino
 jcs33n25ct.pdf

N N-CHANNEL MOSFET R JCS33N25CT MAIN CHARACTERISTICS Package ID 33A VDSS 250V RDSON-max 120m @Vgs=10V QG-typ 46.3nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS ... See More ⇒

 0.23. Size:952K  blue-rocket-elect
 bri3n25.pdf

BRI3N25(BRCS3N25I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef... See More ⇒

 0.24. Size:239K  blue-rocket-elect
 brs3n25.pdf

... See More ⇒

 0.25. Size:1102K  blue-rocket-elect
 brd3n25.pdf

BRD3N25(BRCS3N25D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high... See More ⇒

 0.26. Size:105K  kexin
 kxu03n25.pdf

SMD Type MOSFET N-Channel MOSFET KXU03N25 TO-252 Unit mm Features 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 +0.8 VDS (V) = 250V 5.30-0.2 0.50-0.7 RDS(ON) 2 (VGS = 10V) 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 +0.15 1. Gate 4.60-0.15 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDSS 250... See More ⇒

 0.27. Size:1197K  belling
 bl13n25-p bl13n25-a bl13n25-u bl13n25-d.pdf

BL13N25 Power MOSFET 1 Description Step-Down Converter BL13N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 0.28. Size:1198K  belling
 bl13n25l-p bl13n25l-a bl13n25l-u bl13n25l-d.pdf

BL13N25L Power MOSFET 1 Description Step-Down Converter BL13N25L, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS ... See More ⇒

 0.29. Size:862K  belling
 bl33n25-p bl33n25-a.pdf

BL33N25 Power MOSFET 1 Description Step-Down Converter BL33N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 0.30. Size:887K  cn hmsemi
 hm3n25i.pdf

HM3N25I Silicon N-Channel Power MOSFET General Description VDSS 250 V HM3N25I, the silicon N-channel Enhanced ID 3.0 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit ... See More ⇒

 0.31. Size:561K  cn minos
 md33n25.pdf

Description MD33N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 250 V DS I 33 A D R 0.1 DS(ON).Typ ... See More ⇒

 0.32. Size:281K  inchange semiconductor
 fdi33n25.pdf

isc N-Channel MOSFET Transistor FDI33N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 94m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpo... See More ⇒

 0.33. Size:288K  inchange semiconductor
 fdp33n25.pdf

isc N-Channel MOSFET Transistor FDP33N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 94m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB... See More ⇒