3N25 - Даташиты. Аналоги. Основные параметры

GOFORD3N25Description Features - VDSS RDS(ON) ID @10V (typ) 3A250V 1.4 Fast switching 100% avalanche tested Improved dv/dt capability TO-251TO-252 Application High frequency switching mode power supply Uninterruptible Power Supply (UPS) Electronic ballast Absolute Maximum Ratings TC=25 unless otherwise specified Max.

STD3N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3N25 250 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3N25E/DDesigner's Data SheetTMOS E-FET. MTD3N25EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 3 AMPERESenergy in the avalanche and commutation modes. The new en

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3N25E/DDesigner's Data SheetTMOS E-FET. MTD3N25EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 3 AMPERESenergy in the avalanche and commutation modes. The new en

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N25E/DDesigner's Data SheetMTP3N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high3.0 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffic

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW23N25E/DDesigner's Data SheetMTW23N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 23 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.11 OHMenergy in

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N25E/DDesigner's Data SheetMTP3N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high3.0 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffic

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW23N25E/DDesigner's Data SheetMTW23N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 23 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.11 OHMenergy in

STD3N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3N25 250 V

May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially

November 2000TMQFETQFETQFETQFETFQB3N25 / FQI3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technolo

November 2000TMQFETQFETQFETQFETFQP3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technology has bee

October TMUniFETFDP33N25 / FDPF33N25T 250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switchingThis advanced technolog

September 2007UniFETTMFDA33N25tmN-Channel MOSFET 250V, 33A, 0.094Features Description RDS(on) = 0.088 ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 36nC)DMOS technology. Low Crss ( Typ. 35pF)This advance technology has been

August 2014FDPF33N25TN-Channel UniFETTM MOSFET250 V, 33 A, 94 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF)p

May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially

November 2013FQPF3N25N-Channel QFET MOSFET250 V, 2.3 A, 2.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 1.15 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC)technology has been especially tailored

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1SOT-223 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge 1and superior switching performance. TO-252 FEATURES * RDS(ON)

N N-CHANNEL MOSFET R JCS33N25CT MAIN CHARACTERISTICS Package ID 33A VDSS 250V RDSON-max 120m @Vgs=10V QG-typ 46.3nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS

BRI3N25(BRCS3N25I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef

BRS3N25(CS3N25) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

BRD3N25(BRCS3N25D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

SMD Type MOSFETN-Channel MOSFETKXU03N25TO-252Unit: mm Features6.50+0.15 2.30+0.1-0.15 -0.1+0.2 +0.8 VDS (V) = 250V5.30-0.2 0.50-0.7 RDS(ON) 2 (VGS = 10V)0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.1+0.151. Gate4.60-0.152. Drain3. Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDSS 250

BL13N25 Power MOSFET 1Description Step-Down Converter BL13N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

BL13N25L Power MOSFET 1Description Step-Down Converter BL13N25L, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

BL33N25 Power MOSFET 1Description Step-Down Converter BL33N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

HM3N25ISilicon N-Channel Power MOSFETGeneral Description VDSS 250 V HM3N25I, the silicon N-channel Enhanced ID 3.0 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit

isc N-Channel MOSFET Transistor FDI33N25FEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpo

isc N-Channel MOSFET Transistor FDP33N25FEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB