IRF521 MOSFET PDF: N-Ch, 80V, 9.2A. Full specification with pinout and replacement list

IRF521 PDF Specs and Replacement

   Type Designator: IRF521
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 70(max) nS
   Cossⓘ - Output Capacitance: 400(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO220

IRF521 substitution

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IRF521 PDF Specs

0.1. Size:310K international rectifier
irf5210lpbf irf5210spbf.pdf pdf_icon

PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 60m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150 C... See More ⇒

0.2. Size:125K international rectifier
irf5210.pdf pdf_icon

PD - 91434A IRF5210 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-... See More ⇒

0.3. Size:189K international rectifier
irf5210pbf.pdf pdf_icon

PD - 95408 IRF5210PbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.06 l P-Channel G l Fully Avalanche Rated ID = -40A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒

0.4. Size:186K international rectifier
irf5210s.pdf pdf_icon

PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒