All MOSFET. IRF521 Datasheet

 

IRF521 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF521

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 9.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO220

IRF521 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF521 Datasheet (PDF)

0.1. irf520-fi irf521-fi irf522-fi irf523-fi.pdf Size:502K _st

IRF521
IRF521

0.2. irf5210lpbf irf5210spbf.pdf Size:310K _international_rectifier

IRF521
IRF521

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 0.3. auirf5210s.pdf Size:236K _international_rectifier

IRF521
IRF521

AUTOMOTIVE GRADEAUIRF5210SFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-100Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.60mGl 175C Operating TemperatureS ID-38Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxDl Lead-Free, RoHS Compliantl Automotive Qualified *Desc

0.4. irf5210.pdf Size:125K _international_rectifier

IRF521
IRF521

PD - 91434AIRF5210HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

 0.5. irf5210pbf.pdf Size:189K _international_rectifier

IRF521
IRF521

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

0.6. irf5210s.pdf Size:186K _international_rectifier

IRF521
IRF521

PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

0.7. irf5210.pdf Size:279K _inchange_semiconductor

IRF521
IRF521

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210,IIRF5210FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extreme

0.8. irf5210spbf.pdf Size:206K _inchange_semiconductor

IRF521
IRF521

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210SPBFFEATURESP-channelWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingUltra low on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRFZ44N , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L .

 

 
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