All MOSFET. 20N50 Datasheet

 

20N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 20N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 400 nS

Drain-Source Capacitance (Cd): 400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: TO3P

20N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

20N50 Datasheet (PDF)

1.1. tmp20n50 tmpf20n50.pdf Size:409K _update

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20N50

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A  Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50

1.2. tmp20n50a tmpf20n50a.pdf Size:621K _update

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20N50

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 18A < 0.3W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP20N50A / TMPF20N50A TO-220 / TO-220F TMP20N50A / TMPF20N50A RoHS TMP20N50AG / TMPF20N50AG TO-220 / TO-220F T

 1.3. fmc20n50es.pdf Size:500K _upd-mosfet

20N50
20N50

FMC20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.

1.4. sihb20n50e.pdf Size:200K _upd-mosfet

20N50
20N50

SiHB20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.184 • Reduced switching and conduction losses Qg max. (nC) 92 • Low gate charge (Qg) Qgs (nC) 10 • Avalanche energy rated (UIS) Qgd (nC) 19 • Mater

 1.5. sihs20n50c.pdf Size:145K _upd-mosfet

20N50
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SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 • 100 % Avalanche Tested RDS(on) ()VGS = 10 V 0.270 • High Peak Current Capability Qg (Max.) (nC) 76 • dV/dt Ruggedness Qgs (nC) 21 • Improved trr/Qrr Qgd (nC) 34 • Improved Gate Charge Configuration Single • High Power Dissipations Capability

1.6. fmi20n50e.pdf Size:365K _upd-mosfet

20N50
20N50

FMI20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.7. fmv20n50e.pdf Size:360K _upd-mosfet

20N50
20N50

FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.8. siha20n50e.pdf Size:164K _upd-mosfet

20N50
20N50

SiHA20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.184 • Reduced switching and conduction losses Qg max. (nC) 92 • Low gate charge (Qg) Qgs (nC) 10 • Avalanche energy rated (UIS) Qgd (nC) 19 • Mater

1.9. fmh20n50es.pdf Size:504K _upd-mosfet

20N50
20N50

FMH20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5

1.10. fmv20n50es.pdf Size:491K _upd-mosfet

20N50
20N50

FMV20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

1.11. sihp20n50e.pdf Size:158K _upd-mosfet

20N50
20N50

SiHP20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.184 • Reduced switching and conduction losses Qg max. (nC) 92 • Low gate charge (Qg) Qgs (nC) 10 • Avalanche energy rated (UIS) Qgd (nC) 19 • Mater

1.12. fmc20n50e.pdf Size:369K _upd-mosfet

20N50
20N50

FMC20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.13. irfb20n50kpbf.pdf Size:217K _upd-mosfet

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PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET® Power MOSFET AppIications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

1.14. msw20n50.pdf Size:823K _upd-mosfet

20N50
20N50

MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (Typical 0.26Ω )@VGS=10V • Gate Charge (Typical 90nC) • Improved dv/dt Capability, High Ruggedness

1.15. tman20n50.pdf Size:484K _upd-mosfet

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TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 20A <0.3W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N50 TO-3PN TMAN20N50 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50 Unit Drain-Source Voltage VDS 500 V Gate-Source Voltag

1.16. sihg20n50e.pdf Size:175K _upd-mosfet

20N50
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SiHG20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.184 • Reduced switching and conduction losses Qg max. (nC) 92 • Low gate charge (Qg) Qgs (nC) 10 • Avalanche energy rated (UIS) Qgd (nC) 19 • Mater

1.17. fmp20n50es.pdf Size:490K _upd-mosfet

20N50
20N50

FMP20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V

1.18. fml20n50es.pdf Size:280K _upd-mosfet

20N50
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http://www.fujisemi.com FML20N50ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0±0.2 7.0±0.2 0.4±0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

1.19. tman20n50a.pdf Size:503K _upd-mosfet

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TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 500V 20A < 0.3W  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N50A TO-3PN TMAN20N50A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50A Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±3

1.20. fmh20n50e.pdf Size:439K _upd-mosfet

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FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.21. msf20n50.pdf Size:843K _upd-mosfet

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MSF20N50 N-Channel Enhancement Mode Power MOSFET Description The MSF20N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • S

1.22. sihg20n50c.pdf Size:181K _upd-mosfet

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SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 560 Definition RDS(on) (Ω)VGS = 10 V 0.270 • Low Figure-of-Merit Ron x Qg Qg (Max.) (nC) 76 • 100 % Avalanche Tested Qgs (nC) 21 • High Peak Current Capability Qgd (nC) 34 • dV/dt Ruggedness Configuration Single • Improved Trr/Qrr • Imp

1.23. fmi20n50es.pdf Size:497K _upd-mosfet

20N50
20N50

FMI20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.

1.24. fmp20n50e.pdf Size:360K _upd-mosfet

20N50
20N50

FMP20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.25. irfb20n50k.pdf Size:183K _upd-mosfet

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PD - 94418A IRFB20N50K SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Charact

1.26. wvm20n50.pdf Size:22K _update_mosfet

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N50 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

1.27. tsm20n50ci tsm20n50cz.pdf Size:401K _update_mosfet

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 TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

1.28. mtw20n50erev4.pdf Size:193K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW20N50E/D Designer's? Data Sheet MTW20N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 20 AMPERES 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provide enhanced

1.29. mty20n50e.pdf Size:183K _motorola

20N50
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY20N50E/D Designer's? Data Sheet MTY20N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 20 AMPERES scheme to provide enhanced voltageblocking capability without 500 VOLTS degrading perform

1.30. mtv20n50e.pdf Size:273K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTV20N50E/D Designer's? Data Sheet MTV20N50E TMOS E-FET.? Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 20 AMPERES 500 VOLTS The D3PAK package has the capability of housing the largest chip RDS(on) = 0.240 OHM size of any standard, plastic, surface mount power

1.31. mtw20n50e.pdf Size:169K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW20N50E/D Designer's? Data Sheet MTW20N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 20 AMPERES 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provide enhanced

1.32. phw20n50e 2.pdf Size:92K _philips2

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Philips Semiconductors Product specification PowerMOS transistors PHW20N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 20 A g Low thermal resistance RDS(ON) ? 0.27 ? s GENERAL DESCRIPTION PINNING SOT429 (TO247) N-channel, enhanc

1.33. fdp20n50 fdpf20n50 fdpf20n50t.pdf Size:665K _fairchild_semi

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November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to •

1.34. fdb20n50f.pdf Size:562K _fairchild_semi

20N50
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December 2013 FDB20N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 20 A, 260 mΩ Features Description • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 50 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 27

1.35. fda20n50f.pdf Size:611K _fairchild_semi

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October 2007 UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26? Features Description RDS(on) = 0.22? ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 50nC ) stripe, DMOS technology. Low Crss ( Typ. 27pF ) This advance technology has been especially tailor

1.36. fdp20n50 fdpf20n50.pdf Size:469K _fairchild_semi

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April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially tailored to

1.37. fdp20n50f fdpf20n50ft.pdf Size:838K _fairchild_semi

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October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26? Features RDS(on) = 0.22? ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reverse recovery swit

1.38. fda20n50 f109.pdf Size:740K _fairchild_semi

20N50
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July 2007 TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description 22A, 500V, RDS(on) = 0.23? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially tailored t

1.39. irfb20n50kpbf.pdf Size:192K _international_rectifier

20N50
20N50

PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET AppIications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21? 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Full

1.40. irfb20n50k.pdf Size:115K _international_rectifier

20N50
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PD - 94418 IRFB20N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21? 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized

1.41. ssh20n45 ssh20n50.pdf Size:171K _samsung

20N50
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1.42. sihg20n50c.pdf Size:176K _vishay

20N50
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1.43. ixfp20n50p3m.pdf Size:120K _ixys

20N50
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Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFP20N50P3M Power MOSFET ID25 = 8A ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V G D S VGSM Tran

1.44. ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf Size:157K _ixys

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Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

1.45. 20n50.pdf Size:1578K _goford

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GOFORD 20N50 General Description Features This 20N50 Power MOSFET is produced using • 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V advanced planar stripe DMOS technology. • Low gate charge ( typical 70nC) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and with

1.46. ssf20n50uh.pdf Size:463K _silikron

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 SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2Ω (typ.) ID 20A ① Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery Descri

1.47. bru20n50.pdf Size:857K _blue-rocket-elect

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BRU20N50(BRCS20N50P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P塑封封装 N 沟MOS 晶体管。N-Channel MOSFET in a TO-3P Plastic Package. 特征 / Features 低栅极电荷,开关速度快,雪崩能量高,dv/dt 能力强。 Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. 用途 / Applications 用于高电

1.48. brf20n50.pdf Size:781K _blue-rocket-elect

20N50
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BRF20N50(BRCS20N50FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低的门槛电压、反向传输电容小、开关速度快。 Low gate charge、Low Crss 、Fast switching. 用途 / Applications 用于高效 DC/DC 转换和功率开关。 These devices a

1.49. hfh20n50.pdf Size:630K _shantou-huashan

20N50
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 Shantou Huashan Electronic Devices Co.,Ltd. HFH20N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

1.50. cs20n50 a8h.pdf Size:352K _crhj

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Silicon N-Channel Power MOSFET R ○ CS20N50 A8H General Description: VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.51. cs20n50 anh.pdf Size:363K _crhj

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Silicon N-Channel Power MOSFET R ○ CS20N50 ANH General Description: VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.52. cm20n50.pdf Size:128K _jdsemi

20N50
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R CM20N50 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于电焊机控制、大功率开关电源 等功率开关电路 2.主要特点 开关速度快 驱动简单,可并联使用 3.封装外

1.53. cm20n50pz.pdf Size:126K _jdsemi

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R C2N0Z M05P 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电焊机控制、大功率开关电源 等功率开关电路 2 .主要特点 1 开关速度快 2 驱动简单,可并联使用 3 3

1.54. cm20n50p.pdf Size:129K _jdsemi

20N50
20N50

R CM20N50P 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于电焊机控制、大功率开关电源 等功率开关电路 2.主要特点 1 开关速度快 2 驱动简单,可并联使用 3 3

1.55. cm20n50f.pdf Size:130K _jdsemi

20N50
20N50

R CM20N50F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于电焊机控制、大功率开关电源 等功率开关电路 2.主要特点 开关速度快 1 驱动简单,可并联使用 2 3.封

1.56. msf20n50.pdf Size:843K _bruckewell

20N50
20N50

MSF20N50 N-Channel Enhancement Mode Power MOSFET Description The MSF20N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • S

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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