Справочник MOSFET. 20N50

 

20N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 20N50
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 280 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 400 ns
   Выходная емкость (Cd): 400 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.26 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 20N50

 

 

20N50 Datasheet (PDF)

 ..1. Size:1578K  goford
20n50.pdf

20N50
20N50

GOFORD20N50General Description FeaturesThis 20N50 Power MOSFET is produced using 20.0A, 500V, RDS(on) = 0.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 70nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and with

 0.1. Size:183K  motorola
mty20n50e.pdf

20N50
20N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY20N50E/DDesigner's Data SheetMTY20N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel Enhan

 0.2. Size:169K  motorola
mtw20n50e.pdf

20N50
20N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW20N50E/DDesigner's Data SheetMTW20N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Iso

 0.3. Size:193K  motorola
mtw20n50erev4.pdf

20N50
20N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW20N50E/DDesigner's Data SheetMTW20N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Iso

 0.4. Size:273K  motorola
mtv20n50e.pdf

20N50
20N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTV20N50E/DDesigner's Data SheetMTV20N50ETMOS E-FET.Power Field Effect TransistorD3PAK for Surface MountTMOS POWER FETN

 0.5. Size:183K  international rectifier
irfb20n50k.pdf

20N50
20N50

PD - 94418AIRFB20N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply500V 0.21 20Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Charact

 0.6. Size:217K  international rectifier
irfb20n50kpbf.pdf

20N50
20N50

PD - 94984IRFB20N50KPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply500V 0.21 20Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

 0.7. Size:92K  philips
phw20n50e 2.pdf

20N50
20N50

Philips Semiconductors Product specification PowerMOS transistors PHW20N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 20 Ag Low thermal resistanceRDS(ON) 0.27 sGENERAL DESCRIPTION PINNING SOT429 (TO247)

 0.8. Size:838K  fairchild semi
fdp20n50f fdpf20n50ft.pdf

20N50
20N50

October 2007UniFETTMFDP20N50F / FDPF20N50FTtmN-Channel MOSFET, FRFET 500V, 20A, 0.26Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10ADescription Low gate charge ( Typ. 50nC)These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF)tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reve

 0.9. Size:469K  fairchild semi
fdp20n50 fdpf20n50.pdf

20N50
20N50

April 2007TMUniFETFDP20N50 / FDPF20N50500V N-Channel MOSFETFeatures Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especially

 0.10. Size:665K  fairchild semi
fdp20n50 fdpf20n50 fdpf20n50t.pdf

20N50
20N50

November 2013FDP20N50 / FDPF20N50 / FDPF20N50TN-Channel UniFETTM MOSFET500 V, 20 A, 230 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC)This MOSFET is tailored to reduce on-state resistance, and to

 0.11. Size:611K  fairchild semi
fda20n50f.pdf

20N50
20N50

October 2007UniFETTMFDA20N50FtmN-Channel MOSFET 500V, 22A, 0.26Features Description RDS(on) = 0.22 ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 50nC )stripe, DMOS technology. Low Crss ( Typ. 27pF )This advance technology has been es

 0.12. Size:740K  fairchild semi
fda20n50 f109.pdf

20N50
20N50

July 2007TMUniFETFDA20N50 / FDA20N50_F109500V N-Channel MOSFETFeatures Description 22A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especial

 0.13. Size:562K  fairchild semi
fdb20n50f.pdf

20N50
20N50

December 2013FDB20N50F N-Channel UniFETTM FRFET MOSFET500 V, 20 A, 260 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 27

 0.14. Size:171K  samsung
ssh20n45 ssh20n50.pdf

20N50
20N50

 0.15. Size:82K  rohm
rdx120n50fu6.pdf

20N50
20N50

RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.52.8 Features 1) Low on-resistance. 2) Low input capacitance. 1.21.33) Excellent resistance to damage from static electricity. 0.8 (1)Gate2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching

 0.16. Size:181K  vishay
sihg20n50c.pdf

20N50
20N50

SiHG20N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) at TJ max. 560DefinitionRDS(on) ()VGS = 10 V 0.270 Low Figure-of-Merit Ron x QgQg (Max.) (nC) 76 100 % Avalanche TestedQgs (nC) 21 High Peak Current CapabilityQgd (nC) 34 dV/dt RuggednessConfiguration Single Improved Trr/Qrr Imp

 0.17. Size:145K  vishay
sihs20n50c.pdf

20N50
20N50

SiHS20N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 100 % Avalanche TestedRDS(on) ()VGS = 10 V 0.270 High Peak Current CapabilityQg (Max.) (nC) 76 dV/dt RuggednessQgs (nC) 21 Improved trr/QrrQgd (nC) 34 Improved Gate ChargeConfiguration Single High Power Dissipations Capability

 0.18. Size:158K  vishay
sihp20n50e.pdf

20N50
20N50

SiHP20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

 0.19. Size:200K  vishay
sihb20n50e.pdf

20N50
20N50

SiHB20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

 0.20. Size:858K  vishay
irfb20n50k sihfb20n50k.pdf

20N50
20N50

IRFB20N50K, SiHFB20N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.21 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 110COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentConf

 0.21. Size:164K  vishay
siha20n50e.pdf

20N50
20N50

SiHA20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

 0.22. Size:175K  vishay
sihg20n50e.pdf

20N50
20N50

SiHG20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

 0.23. Size:157K  ixys
ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf

20N50
20N50

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA20N50P3ID25 = 20APower MOSFETsIXFP20N50P3 RDS(on) 300m IXFQ20N50P3N-Channel Enhancement Mode IXFH20N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

 0.24. Size:120K  ixys
ixfp20n50p3m.pdf

20N50
20N50

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFP20N50P3MPower MOSFET ID25 = 8A RDS(on) 300m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 V GDSVGSM Tran

 0.25. Size:494K  onsemi
fdp20n50f fdpf20n50ft.pdf

20N50
20N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.26. Size:96K  onsemi
mtw20n50e.pdf

20N50
20N50

MTW20N50EPreferred DevicePower MOSFET20 Amps, 500 VoltsNChannel TO247This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltageblocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation20 AMPERESmodes. The new

 0.27. Size:772K  onsemi
fdp20n50 fdpf20n50 fdpf20n50t.pdf

20N50
20N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.28. Size:675K  onsemi
fdb20n50f.pdf

20N50
20N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.29. Size:504K  fuji
fmh20n50es.pdf

20N50
20N50

FMH20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P (Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

 0.30. Size:500K  fuji
fmc20n50es.pdf

20N50
20N50

FMC20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

 0.31. Size:490K  fuji
fmp20n50es.pdf

20N50
20N50

FMP20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

 0.32. Size:439K  fuji
fmh20n50e.pdf

20N50
20N50

FMH20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.33. Size:369K  fuji
fmc20n50e.pdf

20N50
20N50

FMC20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.34. Size:280K  fuji
fml20n50es.pdf

20N50
20N50

http://www.fujisemi.comFML20N50ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

 0.35. Size:360K  fuji
fmp20n50e.pdf

20N50
20N50

FMP20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.36. Size:497K  fuji
fmi20n50es.pdf

20N50
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FMI20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

 0.37. Size:365K  fuji
fmi20n50e.pdf

20N50
20N50

FMI20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.38. Size:360K  fuji
fmv20n50e.pdf

20N50
20N50

FMV20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 0.39. Size:491K  fuji
fmv20n50es.pdf

20N50
20N50

FMV20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

 0.40. Size:401K  taiwansemi
tsm20n50ci tsm20n50cz.pdf

20N50
20N50

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

 0.41. Size:463K  silikron
ssf20n50uh.pdf

20N50
20N50

SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2 (typ.) ID 20A Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri

 0.42. Size:278K  inpower semi
ftw20n50a.pdf

20N50
20N50

FTW20N50AGeneral Description VDSS 500 VFTW20N50A, the silicon N-channel EnhancedID 20 APD (TC=25 ) 230 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 0.26 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor TO3P(N) can be used in various power switching circuit for system miniaturiz

 0.43. Size:781K  blue-rocket-elect
brf20n50.pdf

20N50
20N50

BRF20N50(BRCS20N50FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Low gate chargeLow Crss Fast switching. / Applications DC/DC These devices a

 0.44. Size:925K  blue-rocket-elect
bru20n50.pdf

20N50
20N50

BRU20N50 Rev.E Sep.-2016 DATA SHEET / Descriptions TO-3P N MOS N-Channel MOSFET in a TO-3P Plastic Package. / Features dv/dt Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. / Applications

 0.45. Size:346K  nell
20n50b.pdf

20N50
20N50

RoHS 20N50 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(20A, 500Volts)DESCRIPTIOND The Nell 20N50 is a three-terminal silicon device with current conduction capabilityof 20A, fast switching speed, low on-stateresistance, breakdown voltage rating of 500V,TO-3PB and max. threshold voltage of 5 volts.GD (20N50B) They are designed for use i

 0.46. Size:630K  shantou-huashan
hfh20n50.pdf

20N50
20N50

Shantou Huashan Electronic Devices Co.,Ltd. HFH20N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

 0.47. Size:352K  crhj
cs20n50 a8h.pdf

20N50
20N50

Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.48. Size:363K  crhj
cs20n50 anh.pdf

20N50
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Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.49. Size:130K  jdsemi
cm20n50f.pdf

20N50
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RCM20N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 23

 0.50. Size:128K  jdsemi
cm20n50.pdf

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RCM20N50 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 3

 0.51. Size:126K  jdsemi
cm20n50pz.pdf

20N50

RC2N0ZM05P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 121 2 33

 0.52. Size:129K  jdsemi
cm20n50p.pdf

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RCM20N50P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 33

 0.53. Size:346K  silan
svf20n50f svf20n50pn.pdf

20N50
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SVF20N50F/PN 20A500V N 2SVF20N50F/PN N MOS F-CellTM VDMOS 13

 0.54. Size:823K  bruckewell
msw20n50.pdf

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MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness

 0.55. Size:843K  bruckewell
msf20n50.pdf

20N50
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MSF20N50 N-Channel Enhancement Mode Power MOSFET Description The MSF20N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance S

 0.56. Size:612K  feihonltd
fhp20n50a fhf20n50a.pdf

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 0.57. Size:402K  feihonltd
fha20n50a.pdf

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 0.58. Size:545K  jiaensemi
jfam20n50d.pdf

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JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.59. Size:890K  jiaensemi
jfpc20n50c jffm20n50c.pdf

20N50
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JFFM20N50C JFPC20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 20A, 500V, RDS(on)typ. = 0.21@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.60. Size:845K  jiaensemi
jfam20n50c.pdf

20N50
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JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.61. Size:541K  jiaensemi
jfam20n50e.pdf

20N50
20N50

JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.62. Size:224K  kia
kia20n50h.pdf

20N50
20N50

20A500V20N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA20N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.21 @V =10VDS(on) GS Lowgate ch

 0.63. Size:1295K  maple semi
slp20n50c slf20n50c.pdf

20N50
20N50

SLP20N50C / SLF20N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 20A, 500V, RDS(on)typ. = 220m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 74.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 0.64. Size:281K  maple semi
slw20n50c.pdf

20N50
20N50

SLW20N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 20A, 500V, RDS(on) typ. = 0.21@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperforman

 0.65. Size:633K  pipsemi
ptp20n50a pta20n50a.pdf

20N50
20N50

PTP20N50A PTA20N50A 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 500V 0.24 20A RDS(ON),typ.=0.24 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply G LCD Panel Power D S G D S Ordering Information Part Number Package Brand T

 0.66. Size:679K  pipsemi
ptw20n50a.pdf

20N50
20N50

PTW20N50A 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 500V 0.24 20A RDS(ON),typ.=0.24 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTW20N50A TO-3

 0.67. Size:803K  samwin
swf20n50d swt20n50d.pdf

20N50
20N50

SW20N50D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247 BVDSS : 500V ID : 20A High ruggedness Low RDS(ON) (Typ 0.19)@VGS=10V RDS(ON) : 0.19 Low Gate Charge (Typ 82nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Charger, Adaptor, LED 3 3 1 1. Gate 2. Drain 3. Source 3 General De

 0.68. Size:331K  semihow
hfa20n50u.pdf

20N50
20N50

May 2014BVDSS = 500 VRDS(on) typ HFA20N50U ID = 20 A500V N-Channel MOSFETTO-247FEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area L

 0.69. Size:22K  shaanxi
wvm20n50.pdf

20N50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N50Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

 0.70. Size:484K  trinnotech
tman20n50.pdf

20N50
20N50

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

 0.71. Size:503K  trinnotech
tman20n50a.pdf

20N50
20N50

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

 0.72. Size:409K  trinnotech
tmp20n50 tmpf20n50.pdf

20N50
20N50

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50

 0.73. Size:621K  trinnotech
tmp20n50a tmpf20n50a.pdf

20N50
20N50

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A

 0.74. Size:846K  truesemi
tsa20n50m.pdf

20N50
20N50

TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 0.75. Size:802K  truesemi
tsf20n50m.pdf

20N50
20N50

TSF20N50M500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstan

 0.76. Size:1271K  way-on
wmj20n50d1 wmk20n50d1 wml20n50d1.pdf

20N50
20N50

WMJ20N50D1 WMK20N50D1 WML20N50D1500V 20A 0.22 N-ch Power MOSFETDescriptionTO-247 TO-220 TO-220FTABWMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction inon-resistance and ultra-low gate charge forapplications requiring high power density andhigh efficiency. And it is very robust and RoHScompliant.G GGD DDS SSFeatures V =550V@

 0.77. Size:363K  wuxi china
cs20n50anh.pdf

20N50
20N50

Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.78. Size:230K  wuxi china
cs20n50a8h.pdf

20N50
20N50

Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.79. Size:4791K  haolin elec
ha20n50.pdf

20N50
20N50

HA20N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinuous Drai

 0.80. Size:4735K  haolin elec
hf20n50 hp20n50.pdf

20N50
20N50

HF20N50,HP20N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinu

 0.81. Size:786K  cn hmsemi
hm20n50a.pdf

20N50
20N50

500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 20.0A, 500V, RDS(on) = 0.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 70nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche tested

 0.82. Size:863K  cn hmsemi
hm20n50f.pdf

20N50
20N50

500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 20.0A, 500V, RDS(on) = 0.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 70nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalan

 0.83. Size:376K  inchange semiconductor
sihg20n50c.pdf

20N50
20N50

isc N-Channel MOSFET Transistor SIHG20N50CFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.84. Size:256K  inchange semiconductor
fmh20n50e.pdf

20N50
20N50

isc N-Channel MOSFET Transistor FMH20N50EFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

 0.85. Size:232K  inchange semiconductor
fdp20n50.pdf

20N50
20N50

isc N-Channel MOSFET Transistor FDP20N50DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS These devices are well suited for high efficient switchedmode power supplies and active power factor correction.ABSOLUTE MAXI

 0.86. Size:250K  inchange semiconductor
fdb20n50f.pdf

20N50
20N50

isc N-Channel Mosfet Transistor FDB20N50FFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.26(Max)DS(on)Low leakage current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A

Другие MOSFET... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BS170 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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