10N60F PDF and Equivalents Search

GOFORD 10N60/10N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.75 10A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are ... See More ⇒

KF10N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power su... See More ⇒

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES ... See More ⇒

N R N-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10V Qg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

Spec. No. C406FP Issued Date 2008.12.02 CYStech Electronics Corp. Revised Date 2014.02.10 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDSON(MAX) 0.75 MTN10N60FP ID 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

... See More ⇒

Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒

Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

R CM10N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1 ... See More ⇒

DIP Type MOSFET N-Channel MOSFET KX10N60F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 600V ID = 10 A (VGS = 10V) 0.20 2.76 RDS(ON) 730m (VGS = 10V) 1 2 3 Qg(typ.)= 29.5nC 1.47max 0.20 0.50 D 0.20 0.80 2.54typ 2.54typ G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou... See More ⇒

SVF10N60T/F/S/K 10A 600V N 2 SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3 TO-263-2L 1 ... See More ⇒

... See More ⇒

CS10N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S E... See More ⇒

BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25... See More ⇒

QM10N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM10N60F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me... See More ⇒

Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10N60F CS... See More ⇒

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P,CS1060K 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10... See More ⇒

FIR10N60FG Silicon N-Channel Power MOSFET PIN Connection TO-220F VDSS 600 V ID 10 A PD (TC=25 ) 125 W RDS(ON) 0.63 Features G D S Fast Switching ESD Improved Capability D Low Gate Charge (Typical Data 60nC) Low Reverse transfer capacitances(Typical 28pF) G 100% Single Pulse avalanche energy Test S Applications Marking Diagram Power switch circuit of adap... See More ⇒

10N60 / 10N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 10.0A, 600V, RDS(on) = 0.750 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 48nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast swit... See More ⇒

10N60 Series N-Channel MOSFET 9.5A, 600V, N H FQP10N60C H10N60P P TO-220P HAOHAI 50Pcs 1000Pcs 5000Pcs 10N60 FQPF10N60C H10N60F F TO-220F 10N60 Series Pin Assignment Features ID=9.5A Originative New De... See More ⇒