All MOSFET. 10N60F Datasheet

 

10N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 165 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO220F

10N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N60F Datasheet (PDF)

1.1. cs10n60f.pdf Size:280K _update_mosfet

10N60F
10N60F

BRF10N60(CS10N60F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25

1.2. cs10n60fa9hd.pdf Size:2795K _update_mosfet

10N60F
10N60F

CS10N60FA9HD 600V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220F • ESD improved capability. 0.189(4.80) 0.173(4.40) • Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) • Low reverse transfer capacitances. 0.098(2.50) • 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code ■ Mechanical data G D S • E

 1.3. mtn10n60fp.pdf Size:332K _cystek

10N60F
10N60F

Spec. No. : C406FP Issued Date : 2008.12.02 CYStech Electronics Corp. Revised Date :2014.02.10 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDSON(MAX) : 0.75Ω MTN10N60FP ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

1.4. 10n60 10n60f.pdf Size:2298K _goford

10N60F
10N60F

GOFORD 10N60/10N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.75Ω 10A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

 1.5. ssf10n60f.pdf Size:528K _silikron

10N60F
10N60F

 SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.6. cs10n60f a9r.pdf Size:272K _crhj

10N60F
10N60F

Silicon N-Channel Power MOSFET R ○ CS10N60F A9R General Description: VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.7. cs10n60f a9hd.pdf Size:351K _crhj

10N60F
10N60F

Silicon N-Channel Power MOSFET R ○ CS10N60F A9HD VDSS 600 V General Description: ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.8. cm10n60f.pdf Size:127K _jdsemi

10N60F
10N60F

R CM10N60F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容小

1.9. kx10n60f.pdf Size:1596K _kexin

10N60F
10N60F

DIP Type MOSFET N-Channel MOSFET KX10N60F Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● VDS (V) = 600V ● ID = 10 A (VGS = 10V) ±0.20 2.76 ● RDS(ON) < 730mΩ (VGS = 10V) 1 2 3 ● Qg(typ.)= 29.5nC 1.47max ±0.20 0.50 D ±0.20 0.80 2.54typ 2.54typ G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Sou

Datasheet: 840 , 16N50F , 13N50F , 20N50 , 5N60F , 7N60F , 8N60A , 8N60AF , IRF3710 , 12N60F , 7N65AF , 10N65A , 10N65AF , 6N70F , 7N80F , 18N50A , G4N65 .

 
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