All MOSFET. 10N65A Datasheet

 

10N65A MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N65A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 156 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26.2 nS

Drain-Source Capacitance (Cd): 146.5 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220

10N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N65A Datasheet (PDF)

1.1. tmp10n65a tmpf10n65a.pdf Size:607K _update

10N65A
10N65A

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 650V 9.5A <0.82W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N65A / TMPF10N65A TO-220 / TO-220F TMP10N65A / TMPF10N65A RoHS TMP10N65AG / TMPF10N65AG TO-22

1.2. cs10n65a8hd.pdf Size:356K _update_mosfet

10N65A
10N65A

Silicon N-Channel Power MOSFET R ○ CS10N65 A8HD VDSS 650 V General Description: ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 1.3. 10n65a 10n65af.pdf Size:1852K _goford

10N65A
10N65A

10N65A/10N65AF GOFORD Description Features • VDSS RDS(ON) ID @ 10V (typ) 10A 650V 0.72Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • Active power factor correction • Uninterruptible Power Supply (UPS) • Electronic lamp ballasts Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter TO-220

1.4. cm10n65afz.pdf Size:125K _jdsemi

10N65A
10N65A

R CM10N65AFZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容

 1.5. cm10n65az.pdf Size:122K _jdsemi

10N65A
10N65A

R CM10N65AZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
Back to Top

 


10N65A
  10N65A
  10N65A
 

social 

LIST

Last Update

MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |

 

 

 
Back to Top