G8N80BF Datasheet and Replacement
Type Designator: G8N80BF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220F
G8N80BF substitution
G8N80BF Datasheet (PDF)
g8n80bf.pdf

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Datasheet: 7N65AF , 10N65A , 10N65AF , 6N70F , 7N80F , 18N50A , G4N65 , G7N65 , AON7408 , G10N80BF , 12N65A , 12N65AF , SVD4N65T , SVD4N65F , SVD2N60M , SVD2N60F , SVD2N60T .
History: SMN0470F | HYG067N07NQ1B
Keywords - G8N80BF MOSFET datasheet
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History: SMN0470F | HYG067N07NQ1B



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