G8N80BF PDF and Equivalents Search

 

G8N80BF Specs and Replacement

Type Designator: G8N80BF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: TO220F

G8N80BF substitution

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G8N80BF datasheet

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G8N80BF

GOFORD G8N80BF TO-220F Page 1 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 2 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 3 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 4 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD ... See More ⇒

Detailed specifications: 7N65AF , 10N65A , 10N65AF , 6N70F , 7N80F , 18N50A , G4N65 , G7N65 , 7N65 , G10N80BF , 12N65A , 12N65AF , SVD4N65T , SVD4N65F , SVD2N60M , SVD2N60F , SVD2N60T .

History: SMK0270F | FDU6N25

Keywords - G8N80BF MOSFET specs

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