12N65AF MOSFET Datasheet: N-Ch, 650V, 12A. Full specification with pinout and replacement list

12N65AF Specs and Replacement

Type Designator: 12N65AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.7 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220F

12N65AF substitution

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12N65AF datasheet

..1. Size:1107K goford
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12N65A/12N65AF GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 12A 650V 0.65 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220 ... See More ⇒

0.1. Size:125K jdsemi
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8.1. Size:123K jdsemi
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R CM12N65A www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LD E 2 3... See More ⇒

8.2. Size:541K belling
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BL12N65A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒