All MOSFET. 12N65AF Datasheet

 

12N65AF MOSFET. Datasheet pdf. Equivalent


   Type Designator: 12N65AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25.7 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F

 12N65AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

12N65AF Datasheet (PDF)

 ..1. Size:1107K  goford
 12n65a 12n65af.pdf

12N65AF 12N65AF

12N65A/12N65AFGOFORDDescription Features VDSS RDS(ON) ID @10V (typ) 12A650V 0.65 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220

 0.1. Size:125K  jdsemi
 cm12n65af.pdf

12N65AF 12N65AF

RCM12N65AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12

 8.1. Size:123K  jdsemi
 cm12n65a to220a.pdf

12N65AF 12N65AF

RCM12N65A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 3

 8.2. Size:541K  belling
 bl12n65a-p bl12n65a-a.pdf

12N65AF 12N65AF

BL12N65A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

 8.3. Size:346K  wuxi china
 cs12n65a8h.pdf

12N65AF 12N65AF

Silicon N-Channel Power MOSFET R CS12N65 A8H VDSS 650 V General Description ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFS350

 

 
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