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SVD2N60D Specs and Replacement

Type Designator: SVD2N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm

Package: TO252-2L

SVD2N60D substitution

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SVD2N60D datasheet

 7.1. Size:603K  silan
 svd2n60.pdf pdf_icon

SVD2N60D

SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s... See More ⇒

Detailed specifications: G10N80BF, 12N65A, 12N65AF, SVD4N65T, SVD4N65F, SVD2N60M, SVD2N60F, SVD2N60T, IRF4905, IPP15N03L, IPB15N03L, FTP10N40, FTA10N40, 2SK725, 2SK793, 2SK1363, 2SK2196

Keywords - SVD2N60D MOSFET specs

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