All MOSFET. IPB15N03L Datasheet

 

IPB15N03L Datasheet and Replacement


   Type Designator: IPB15N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0129 Ohm
   Package: PTO263
 

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IPB15N03L Datasheet (PDF)

 ..1. Size:444K  infineon
ipp15n03l ipb15n03l.pdf pdf_icon

IPB15N03L

IPP15N03LIPB15N03LOptiMOS Buck converter seriesProduct SummaryFeatureVDS 30 V N-ChannelRDS(on) max. SMD version 12.6 m Logic LevelID 42 A Low On-Resistance RDS(on)P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for f

 9.1. Size:983K  infineon
ipb156n22nfd.pdf pdf_icon

IPB15N03L

IPB156N22NFDMOSFETDPAKOptiMOSTMFD Power-Transistor, 220 VFeatures N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to

 9.2. Size:208K  inchange semiconductor
ipb156n22nfd.pdf pdf_icon

IPB15N03L

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPB156N22NFDFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: 12N65AF , SVD4N65T , SVD4N65F , SVD2N60M , SVD2N60F , SVD2N60T , SVD2N60D , IPP15N03L , AO3400 , FTP10N40 , FTA10N40 , 2SK725 , 2SK793 , 2SK1363 , 2SK2196 , 2SK2806-01 , 2SK3455 .

Keywords - IPB15N03L MOSFET datasheet

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