FTA10N40
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTA10N40
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 91
nS
Cossⓘ -
Output Capacitance: 119
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO220F
FTA10N40
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTA10N40
Datasheet (PDF)
..1. Size:425K ark-micro
ftp10n40 fta10n40.pdf 
FTP10N40/FTA10N40400V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 400V 0.50 10A Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number Package Marking F
8.1. Size:281K inpower semi
ftp10n60c fta10n60c.pdf
FTP10N60CFTA10N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor TV Main Power600 V 0.85 10 A SMPS Power Supply LCD Panel Power DFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveG GGOrdering InformationDSDS TO-220FTO-220 SPART NUMBE
9.1. Size:162K first silicon
fta1023.pdf
SEMICONDUCTORFTA1023TECHNICAL DATAFTA1023 TRANSISTOR (PNP) BFEATURES Complementary to FTC1027 EDIM MILLIMETERSA 8.2 MAXDB 5.1 MAXC 1.58 MAXD 0.55 MAXMAXIMUM RATINGS (TaB=25 unless otherwise noted) E 0.7 TYPF 1.27 TYPG 2.54 TYPSymbol Parameter Value UnitFH 14.20 MAX GJ 0.45 MAX VCBOB Collector-Base Voltage -120 V L 4.10 MAX VCEOB Collector-Emitte
9.2. Size:159K first silicon
fta1020 to92l.pdf
SEMICONDUCTORFTA1020TECHNICAL DATAFEATURES B Power Amplifier Applications Complementary to FTC26555 EDIM MILLIMETERSMAXIMUM RATINGS (Ta=25 unless otherwise noted) A 8.2 MAXDB 5.1 MAXSymbol Parameter Value Unit C 1.58 MAXD 0.55 MAXE 0.7 TYPVCBO Collector-Base Voltage -50 V F 1.27 TYPG 2.54 TYPVCEO Collector-Emitter Voltage -50 V FH 14.20 MAX G
9.3. Size:262K first silicon
fta1015.pdf
SEMICONDUCTORFTA1015TECHNICAL DATAB CFEATURES TO-92 PNP TransistorDIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage -50 V G 0.85H 0.45_HJ 14.00 + 0.50VCEO Collector-Emitter Voltage -50 V L 2.30F FM 0.51 MAXVEBO Emit
9.4. Size:147K first silicon
fta1036k.pdf
SEMICONDUCTORFTA1036KTECHNICAL DATAMedium Power Transistor( 32V, 0.5A)Features1) Large IC.I = 500mACMax332) Low V . Ideal for low-voltageCE(sat)operation.13) We declare that the material of productcompliance with RoHS requirements.122StructureEpitaxial planar typePNPSOT-23PNP silicon transistorDEVICE MARKING1) FTA1036K-P = HP2) FTA1036K-Q
9.5. Size:114K first silicon
fta1037ak.pdf
SEMICONDUCTORFTA1037AKTECHNICAL DATAGeneral Purpose TransistorsPNP SiliconORDERING INFORMATION3ShippingDevice PackageFTA1037AK SOT23 3000/Tape & Reel21 SOT 23 MAXIMUM RATINGSParameter Symbol Value Unit3COLLECTORCollectorEmitter Voltage VCEO -50 VCollectorBase Voltage VCBO -60 V1BASEEmitterBase Voltage VEBO -6.0 VCollector Current Conti
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